Página 4 - Microsemi Corporation Productos - Transistores - Bipolar (BJT) - RF | Heisener Electronics
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Microsemi Corporation Productos - Transistores - Bipolar (BJT) - RF

Registros 296
Página  4/10
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2A5
2A5
Microsemi Corporation

TRANS BIPO 55ET-2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 22V
  • Frequency - Transition: 3.4GHz ~ 3.7GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB ~ 9dB
  • Power - Max: 5.3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 3mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: 55ET
  • Supplier Device Package: 55ET
Paquete: 55ET
En existencias2.496
22V
3.4GHz ~ 3.7GHz
-
7dB ~ 9dB
5.3W
20 @ 100mA, 5V
3mA
200°C (TJ)
Stud Mount
55ET
55ET
MS2553C
Microsemi Corporation

TRANS RF BIPO 175W 4A M220

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.5dB
  • Power - Max: 175W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M220
  • Supplier Device Package: M220
Paquete: M220
En existencias7.520
25V
1.025GHz ~ 1.15GHz
-
10.5dB
175W
20 @ 500mA, 5V
4A
200°C (TJ)
Chassis Mount
M220
M220
hot 2001
Microsemi Corporation

TRANS HBT RF BIPOLAR 55BT

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.5dB
  • Power - Max: 5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 55BT
  • Supplier Device Package: 55BT
Paquete: 55BT
En existencias3.904
50V
2GHz
-
9.5dB
5W
20 @ 100mA, 5V
250mA
-
Chassis Mount
55BT
55BT
UMIL10
Microsemi Corporation

TRANS RF BIPO 28W 1.5A 55FT2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 100MHz ~ 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 28W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 1.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
Paquete: 55FT
En existencias4.432
30V
100MHz ~ 400MHz
-
10dB
28W
10 @ 200mA, 5V
1.5A
200°C (TJ)
Chassis, Stud Mount
55FT
55FT
UTV040
Microsemi Corporation

TRANS RF BIPO 25W 2.5A 55FT-7

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 2.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
Paquete: 55FT
En existencias6.112
25V
470MHz ~ 860MHz
-
9dB
25W
10 @ 500mA, 5V
2.5A
200°C (TJ)
Chassis, Stud Mount
55FT
55FT
1090MP
Microsemi Corporation

TRANS RF BIPO 250W 6.5A 55FW1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.08dB ~ 8.5dB
  • Power - Max: 250W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 6.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW-1
  • Supplier Device Package: 55FW-1
Paquete: 55FW-1
En existencias7.776
65V
1.025GHz ~ 1.15GHz
-
8.08dB ~ 8.5dB
250W
15 @ 500mA, 5V
6.5A
200°C (TJ)
Chassis Mount
55FW-1
55FW-1
1075MP
Microsemi Corporation

TRANS RF BIPO 250W 6.5A 55FW1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.6dB ~ 8.5dB
  • Power - Max: 250W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 6.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW-1
  • Supplier Device Package: 55FW-1
Paquete: 55FW-1
En existencias5.904
65V
1.025GHz ~ 1.15GHz
-
7.6dB ~ 8.5dB
250W
20 @ 100mA, 5V
6.5A
200°C (TJ)
Chassis Mount
55FW-1
55FW-1
10A015
Microsemi Corporation

TRANS RF BIPO 6W 750MA 55FT2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 24V
  • Frequency - Transition: 2.7GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB ~ 9.5dB
  • Power - Max: 6W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 750mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
Paquete: 55FT
En existencias5.120
24V
2.7GHz
-
9dB ~ 9.5dB
6W
20 @ 100mA, 5V
750mA
200°C (TJ)
Stud Mount
55FT
55FT
10A030
Microsemi Corporation

TRANS RF BIPO 13W 1.5A 55FT2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 24V
  • Frequency - Transition: 2.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.8dB ~ 8.5dB
  • Power - Max: 13W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 1.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
Paquete: 55FT
En existencias7.936
24V
2.5GHz
-
7.8dB ~ 8.5dB
13W
20 @ 200mA, 5V
1.5A
200°C (TJ)
Stud Mount
55FT
55FT
MS1001
Microsemi Corporation

TRANS RF BIPO 270W 20A M174

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 13dB
  • Power - Max: 270W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M174
  • Supplier Device Package: M174
Paquete: M174
En existencias5.424
18V
30MHz
-
13dB
270W
20 @ 5A, 5V
20A
200°C (TJ)
Chassis Mount
M174
M174
MS1003
Microsemi Corporation

TRANS RF BIPO 270W 20A TO-220AC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 136MHz ~ 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6dB
  • Power - Max: 270W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: M111
  • Supplier Device Package: M111
Paquete: M111
En existencias3.344
18V
136MHz ~ 175MHz
-
6dB
270W
10 @ 5A, 5V
20A
200°C (TJ)
Surface Mount
M111
M111
JANTXV2N2857UB
Microsemi Corporation

TRANS NPN 15V 0.04A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 21dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
Paquete: 3-SMD, No Lead
En existencias2.352
15V
-
4.5dB @ 450MHz
21dB
200mW
30 @ 3mA, 1V
40mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
1015MP
Microsemi Corporation

TRANS RF BIPO 50W 1A 55FW1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB ~ 11dB
  • Power - Max: 50W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW
  • Supplier Device Package: 55FW
Paquete: 55FW
En existencias4.832
65V
1.025GHz ~ 1.15GHz
-
10dB ~ 11dB
50W
20 @ 100mA, 5V
1A
200°C (TJ)
Chassis Mount
55FW
55FW
UTV005
Microsemi Corporation

TRANS RF BIPO 8W 750MA 55FT-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 24V
  • Frequency - Transition: 470MHz ~ 860MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB
  • Power - Max: 8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 750mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
Paquete: 55FT
En existencias7.296
24V
470MHz ~ 860MHz
-
11dB
8W
20 @ 100mA, 5V
750mA
200°C (TJ)
Chassis, Stud Mount
55FT
55FT
1004MP
Microsemi Corporation

TRANS RF BIPO 7W 300MA 55FW1

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB ~ 9dB
  • Power - Max: 7W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW-1
  • Supplier Device Package: 55FW-1
Paquete: 55FW-1
En existencias5.984
50V
960MHz ~ 1.215GHz
-
7dB ~ 9dB
7W
20 @ 100mA, 5V
300mA
200°C (TJ)
Chassis Mount
55FW-1
55FW-1
MS1008
Microsemi Corporation

TRANS RF BIPO 233W 10A TO-220AC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 14dB
  • Power - Max: 233W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1.4A, 6V
  • Current - Collector (Ic) (Max): 10A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M164
  • Supplier Device Package: M164
Paquete: M164
En existencias4.528
55V
30MHz
-
14dB
233W
15 @ 1.4A, 6V
10A
200°C (TJ)
Chassis Mount
M164
M164
MS1076
Microsemi Corporation

TRANS RF BIPO 320W 16A M174

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB
  • Power - Max: 320W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 7A, 5V
  • Current - Collector (Ic) (Max): 16A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M174
  • Supplier Device Package: M174
Paquete: M174
En existencias5.360
35V
30MHz
-
12dB
320W
15 @ 7A, 5V
16A
200°C (TJ)
Chassis Mount
M174
M174
UMIL3
Microsemi Corporation

TRANS RF BIPO 11W 700MA 55FT3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 225MHz ~ 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11.8db ~ 13dB
  • Power - Max: 11W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100A, 5V
  • Current - Collector (Ic) (Max): 700mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
Paquete: 55FT
En existencias4.976
30V
225MHz ~ 400MHz
-
11.8db ~ 13dB
11W
10 @ 100A, 5V
700mA
150°C (TJ)
Chassis, Stud Mount
55FT
55FT
1002MP
Microsemi Corporation

TRANS RF BIPO 7W 250MA 55FW1

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.24dB ~ 11dB
  • Power - Max: 7W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW-1
  • Supplier Device Package: 55FW-1
Paquete: 55FW-1
En existencias5.536
50V
960MHz ~ 1.215GHz
-
8.24dB ~ 11dB
7W
20 @ 100mA, 5V
250mA
200°C (TJ)
Chassis Mount
55FW-1
55FW-1
MS1261
Microsemi Corporation

TRANS RF BIPO 34W 2.5A M122

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB
  • Power - Max: 34W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 2.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: M122
  • Supplier Device Package: M122
Paquete: M122
En existencias4.112
18V
175MHz
-
12dB
34W
20 @ 250mA, 5V
2.5A
200°C (TJ)
Chassis, Stud Mount
M122
M122
1000MP
Microsemi Corporation

TRANS RF BIPO 5.3W 300MA 55FW

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.8dB
  • Power - Max: 5.3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW
  • Supplier Device Package: 55FW
Paquete: 55FW
En existencias5.392
-
1.15GHz
-
10.8dB
5.3W
15 @ 100mA, 5V
300mA
-
Chassis Mount
55FW
55FW
MS1336
Microsemi Corporation

TRANS RF BIPO 70W 8A M135

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 70W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: M135
  • Supplier Device Package: M135
Paquete: M135
En existencias6.688
18V
175MHz
-
10dB
70W
20 @ 250mA, 5V
8A
200°C (TJ)
Chassis, Stud Mount
M135
M135
SD1526-01
Microsemi Corporation

TRANS RF BIPO 21.9W 1A M115

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.5dB
  • Power - Max: 21.9W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M115
  • Supplier Device Package: M115
Paquete: M115
En existencias2.352
45V
960MHz ~ 1.215GHz
-
9.5dB
21.9W
-
1A
200°C (TJ)
Chassis Mount
M115
M115
MS1227
Microsemi Corporation

TRANS RF BIPO 80W 4.5A M113

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 15dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V
  • Current - Collector (Ic) (Max): 4.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
Paquete: M113
En existencias3.584
18V
30MHz
-
15dB
80W
200 @ 1A, 5V
4.5A
200°C (TJ)
Chassis Mount
M113
M113
JAN2N2857UB
Microsemi Corporation

TRANS NPN 15V 0.04A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 21dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
Paquete: 3-SMD, No Lead
En existencias3.936
15V
-
4.5dB @ 450MHz
21dB
200mW
30 @ 3mA, 1V
40mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
SD1224
Microsemi Corporation

TRANS RF BIPO 60W 5A M135

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.6dB
  • Power - Max: 60W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M135
  • Supplier Device Package: M135
Paquete: M135
En existencias5.328
35V
175MHz
-
7.6dB
60W
20 @ 500mA, 5V
5A
200°C (TJ)
Chassis Mount
M135
M135
MS652S
Microsemi Corporation

TRANS RF BIPO 25W 2A M123

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 450MHz ~ 512MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 2A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M123
  • Supplier Device Package: M123
Paquete: M123
En existencias3.584
16V
450MHz ~ 512MHz
-
10dB
25W
10 @ 200mA, 5V
2A
200°C (TJ)
Chassis Mount
M123
M123
MS1402
Microsemi Corporation

TRANS RF BIPO 5W 750MA M122

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 450MHz ~ 512MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 750mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M122
  • Supplier Device Package: M122
Paquete: M122
En existencias2.896
16V
450MHz ~ 512MHz
-
10dB
5W
20 @ 100mA, 5V
750mA
200°C (TJ)
Chassis Mount
M122
M122
MS1512
Microsemi Corporation

TRANS BIPO NPN M122

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 860MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 19.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: M122
  • Supplier Device Package: M122
Paquete: M122
En existencias7.984
25V
860MHz
-
10dB
19.4W
-
1.2A
200°C (TJ)
Chassis, Stud Mount
M122
M122
MS1226
Microsemi Corporation

TRANS BIPO NPN M113

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 36V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 18dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 4.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
Paquete: M113
En existencias7.824
36V
30MHz
-
18dB
80W
10 @ 500mA, 5V
4.5A
200°C (TJ)
Chassis Mount
M113
M113