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SI2312BDS-T1-GE3

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SI2312BDS-T1-GE3

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Nº de pieza SI2312BDS-T1-GE3
Fabricantes Vishay Siliconix
Descripción MOSFET N-CH 20V 3.9A SOT23-3
Hoja de datos
Paquete TO-236-3, SC-59, SOT-23-3
ECAD
En existencias 1.403.964 piece(s)
Precio unitario Request a Quote
Plazo de ejecución Se puede enviar inmediatamente
Tiempo estimado de entrega nov 28 - dic 3 (Elija envío expedito)
Pedir presupuesto
Métodos de pago
Servicios de entrega
  • Estamos ofreciendo SI2312BDS-T1-GE3 por precios competitivos en el mercado mundial, por favor nos envíe una solicitud de cuotas para la fijación de precios. ¡Gracias!
  • Para procesar su RFQ, por favor agregue SI2312BDS-T1-GE3 con la cantidad en la BOM. Heisener.com no requiere ningún tipo de registro para solicitar una cotización de SI2312BDS-T1-GE3.

Especificaciones SI2312BDS-T1-GE3

FabricantesVishay Siliconix
CategoríaProductos semiconductores discretos - Transistores - FET, MOSFET - Simple
PaqueteTO-236-3, SC-59, SOT-23-3
ECAD
SerieTrenchFET?
Tipo de FETN-Channel
TecnologíaMOSFET (Metal Oxide)
Drene a la fuente de voltaje (Vdss)20V
Corriente - Drenaje continuo (Id) a 25 ° C3.9A (Ta)
Voltaje de conducción (Rds máx. Encendidos, Rds mínimos activados)1.8V, 4.5V
Vgs (th) (Max) @ Id850mV @ 250µA
Carga de puerta (Qg) (Max) @ Vgs12nC @ 4.5V
Capacitancia de entrada (Ciss) (Max) @ Vds-
Vgs (Max)±8V
Característica FET-
Disipación de potencia (Máx)750mW (Ta)
Rds On (Max) @ Id, Vgs31 mOhm @ 5A, 4.5V
Temperatura de funcionamiento-55°C ~ 150°C (TJ)
Tipo de montajeSurface Mount
Paquete de dispositivo del proveedorSOT-23-3 (TO-236)
Paquete / cajaTO-236-3, SC-59, SOT-23-3

SI2312BDS-T1-GE3 Packaging

Customized Labels
Sealing
Packing
Insepction

SI2312BDS-T1-GE3 FAQ

  • 1. How to order SI2312BDS-T1-GE3 on Heisener?
    Currently, Heisener only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.
  • 2. How does Heisener guarantee that SI2312BDS-T1-GE3 is from the original manufacturer or authorized agents?
    We have a professional and experienced quality control team to strictly verify and test the SI2312BDS-T1-GE3. All suppliers must pass our qualification reviews before they can publish their products including SI2312BDS-T1-GE3 on Heisener; we pay more attention to the channels and quality of SI2312BDS-T1-GE3 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.
  • 3. Are the SI2312BDS-T1-GE3 price and inventory displayed accurate?
    The price and inventory of SI2312BDS-T1-GE3 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.
  • 4. What forms of payment are accepted?
    Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.
    Warm Tips: Some orders in certain payment forms may require handling fee.
  • 5. How is the shipping arranged?
    Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.
    Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.
    Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.
  • 6. What is the process for return or replacement of SI2312BDS-T1-GE3?
    All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SI2312BDS-T1-GE3 we delivered, we will accept the replacement or return of the SI2312BDS-T1-GE3 only when all of the below conditions are fulfilled:
    (1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
    (2)We are informed of the defect described above within 90 days after the delivery of SI2312BDS-T1-GE3.
    (3)The PartNo is unused and only in the original unpacked packaging.
    Two processes to return the products:
    (1)Inform us within 90 days
    (2)Obtain Requesting Return Authorizations
  • 7.How to contact us to get technical supports, such as SI2312BDS-T1-GE3 pin diagram, SI2312BDS-T1-GE3 datasheet?
    If you need any after-sales service, please do not hesitate to contact us.

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SI2312BDS-T1-GE3 Garantías

Service Guarantee

Garantias de servicio

Garantizamos el 100% de satisfacción del cliente.

Nuestro experimentado equipo de ventas y nuestro equipo de soporte técnico respaldan nuestros servicios para satisfacer a todos nuestros clientes.

Quality Guarantee

Garantias de calidad

Ofrecemos 90 días de garantía.

Si los artículos que recibió no tenían la calidad perfecta, seremos responsables de su reembolso o reemplazo, pero los artículos deben devolverse en su estado original.

Cadenas de suministro globales: recursos para distribuidores confiables y autorizados

Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

D# V72:2272_09216793

 Vishay Intertechnologies

Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R

RoHS: Compliant
 0
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

D# SI2312BDS-T1-GE3

 Vishay Intertechnologies

Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2312BDS-T1-GE3)

 0
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

D# SI2312BDS-T1-GE3

 Vishay Intertechnologies

Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-GE3)

 0
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

D# SI2312BDS-T1-GE3

 Vishay Intertechnologies

Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-GE3)

 0
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

 Vishay Intertechnologies

998
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

 Vishay Intertechnologies

Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3

 6000
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

 Vishay Intertechnologies

N-Channel 20V 3.9A 850mV @ 250uA 31mohms @ 5A,4.5V 750mW SOT-23(SOT-23-3) MOSFET RoHS

 9406
Nº de pieza Fabricantes Descripción En existencias

SI2312BDST1GE3

 Vishay Intertechnologies

Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

RoHS: Compliant
 0
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

D# SI2312BDS-T1-GE3CT-ND

 Vishay Siliconix

MOSFET N-CH 20V 3.9A SOT23-3

 55731
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

 Vishay Intertechnologies

Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3

RoHS: Compliant
pbFree: Yes
 13490
Nº de pieza Fabricantes Descripción En existencias

SI2312BDST1GE3

 VISHAY SILICONIX

OEM/CM QUOTES ONLY | NO BROKERS

 107100
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

D# C10490

 Vishay Intertechnologies

9406
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

 Vishay Intertechnologies

OEM/CM Immediate delivery

 500000
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

D# 781-SI2312BDS-T1-GE3

 Vishay Intertechnologies

MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V

RoHS: Compliant
 7976
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

D# XSFP00000063435

 Vishay Siliconix

Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3

 93805
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3.

D# 16AC0252

 Vishay Intertechnologies

Transistor Polarity:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3.9A, On Resistance Rds(on):0.025ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:850mV, MSL:- RoHS Compliant: No

RoHS: Not Compliant
Min Qty: 3000
Container: TAPE & REEL - FULL
 0

SI2312BDS-T1-GE3

D# 16P3709

 Vishay Intertechnologies

N CHANNEL MOSFET, 20V, 5A, TO-236, Transistor Polarity:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3.9A, On Resistance Rds(on):0.025ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:4.5V, MSL:-RoHS Compliant: Yes

RoHS: Compliant
Min Qty: 3000
Container: Cut Tape
 0
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3-LF

D# NS-SI2312BDS-T1-GE3-LF

 Vishay Siliconix

OEM/CM ONLY

 1591

SI2312BDS-T1-GE3

D# NS-SI2312BDS-T1-GE3

 Vishay Siliconix

OEM/CM ONLY

 24087
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

 Vishay Intertechnologies

1837
Nº de pieza Fabricantes Descripción En existencias

SI2312BDST1GE3

 Vishay Siliconix

OEM/CM ONLY

 54016
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

 Vishay Intertechnologies

IN stock Immediate delivery

 499985
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

 Vishay Intertechnologies

MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V

pbFree: Pb-Free
 0
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

 Coilcraft Inc

shipping today

 9551
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

D# 50959424

 Vishay Intertechnologies

Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R

RoHS: Compliant
 0
Nº de pieza Fabricantes Descripción En existencias

SI2312BDS-T1-GE3

 Vishay Huntington

MOSFET N-CH 20V 3.9A SOT23-3

 107777

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SI2312BDS-T1-GE3

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SI2312BDS-T1-GE3 Tags

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