Name: SI4800BDY-T1-GE3
Brand: Vishay Siliconix
SKU: SI4800BDY-T1-GE3
Availability: InStock
Rating: 5 (109 reviews)

SI4800BDY-T1-GE3

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Nº de pieza	SI4800BDY-T1-GE3
Fabricantes	Vishay Siliconix
Descripción	MOSFET N-CH 30V 6.5A 8-SOIC
Hoja de datos	SI4800BDY-T1-GE3 Hoja de datos
Paquete	8-SOIC (0.154", 3.90mm Width)
ECAD
En existencias	648.240 piece(s)
Precio unitario	Request a Quote
Plazo de ejecución	Se puede enviar inmediatamente
Tiempo estimado de entrega	dic 27 - ene 1 (Elija envío expedito)
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Estamos ofreciendo SI4800BDY-T1-GE3 por precios competitivos en el mercado mundial, por favor nos envíe una solicitud de cuotas para la fijación de precios. ¡Gracias!
Para procesar su RFQ, por favor agregue SI4800BDY-T1-GE3 con la cantidad en la BOM. Heisener.com no requiere ningún tipo de registro para solicitar una cotización de SI4800BDY-T1-GE3.

Especificaciones SI4800BDY-T1-GE3

Fabricantes	Vishay Siliconix
Categoría	Productos semiconductores discretos - Transistores - FET, MOSFET - Simple
Paquete	8-SOIC (0.154", 3.90mm Width)
ECAD
Serie	TrenchFET?
Tipo de FET	N-Channel
Tecnología	MOSFET (Metal Oxide)
Drene a la fuente de voltaje (Vdss)	30V
Corriente - Drenaje continuo (Id) a 25 ° C	6.5A (Ta)
Voltaje de conducción (Rds máx. Encendidos, Rds mínimos activados)	4.5V, 10V
Vgs (th) (Max) @ Id	1.8V @ 250µA
Carga de puerta (Qg) (Max) @ Vgs	13nC @ 5V
Capacitancia de entrada (Ciss) (Max) @ Vds	-
Vgs (Max)	±25V
Característica FET	-
Disipación de potencia (Máx)	1.3W (Ta)
Rds On (Max) @ Id, Vgs	18.5 mOhm @ 9A, 10V
Temperatura de funcionamiento	-55°C ~ 150°C (TJ)
Tipo de montaje	Surface Mount
Paquete de dispositivo del proveedor	8-SO
Paquete / caja	8-SOIC (0.154", 3.90mm Width)

ficha técnica SI4800BDY-T1-GE3

SI4800BDY-T1-GE3 Packaging

SI4800BDY-T1-GE3 FAQ

1. How to order SI4800BDY-T1-GE3 on Heisener?

Currently, Heisener only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.
2. How does Heisener guarantee that SI4800BDY-T1-GE3 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the SI4800BDY-T1-GE3. All suppliers must pass our qualification reviews before they can publish their products including SI4800BDY-T1-GE3 on Heisener; we pay more attention to the channels and quality of SI4800BDY-T1-GE3 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.
3. Are the SI4800BDY-T1-GE3 price and inventory displayed accurate?

The price and inventory of SI4800BDY-T1-GE3 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.
4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.
5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.
6. What is the process for return or replacement of SI4800BDY-T1-GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SI4800BDY-T1-GE3 we delivered, we will accept the replacement or return of the SI4800BDY-T1-GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SI4800BDY-T1-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
7.How to contact us to get technical supports, such as SI4800BDY-T1-GE3 pin diagram, SI4800BDY-T1-GE3 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

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SI4800BDY-T1-GE3 Garantías

Garantias de servicio

Garantizamos el 100% de satisfacción del cliente.

Nuestro experimentado equipo de ventas y nuestro equipo de soporte técnico respaldan nuestros servicios para satisfacer a todos nuestros clientes.

Garantias de calidad

Ofrecemos 90 días de garantía.

Si los artículos que recibió no tenían la calidad perfecta, seremos responsables de su reembolso o reemplazo, pero los artículos deben devolverse en su estado original.

Cadenas de suministro globales: recursos para distribuidores confiables y autorizados

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SI4800BDY-T1-GE3

D# V72:2272_09216570

Vishay Intertechnologies

Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R

RoHS: Compliant

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SI4800BDY-T1-GE3

D# SI4800BDY-T1-GE3

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Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4800BDY-T1-GE3)

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En existencias

SI4800BDY-T1-GE3

D# SI4800BDY-T1-GE3

Vishay Intertechnologies

Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-GE3)

Nº de pieza

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En existencias

SI4800BDY-T1-GE3

D# SI4800BDY-T1-GE3

Vishay Intertechnologies

Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-GE3)

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SI4800BDY-T1-GE3

Vishay Intertechnologies

3089

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SI4800BDY-T1-GE3

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MOSFET N-CH 30V 6.5A 8-SOIC

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SI4800BDY-T1-GE3

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N VDS=30V VGS=25V ID=6.5A P=1.3W

6111

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SI4800BDYT1GE3

Vishay Intertechnologies

Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

RoHS: Compliant

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En existencias

SI4800BDY-T1-GE3

D# SI4800BDY-T1-GE3CT-ND

Vishay Siliconix

MOSFET N-CH 30V 6.5A 8SO

4513

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SI4800BDY-T1-GE3

Vishay Intertechnologies

In stock shipping within 2days

18423

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SI4800BDY-T1-GE3

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N-CH REDUCED QG, FAST SWITCHING MOSF

RoHS: Compliant

pbFree: Yes

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SI4800BDYT1GE3

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OEM/CM QUOTES ONLY | NO BROKERS

8925

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SI4800BDY-T1-GE3

Vishay Intertechnologies

OEM/CM Immediate delivery

76325

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SI4800BDY-T1-GE3

D# 781-SI4800BDY-T1-GE3

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RoHS: Compliant

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SI4800BDY-T1-GE3

D# 16P3753

Vishay Intertechnologies

N CHANNEL MOSFET, 30V, 9A, SOIC, Transistor Polarity:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:9A, On Resistance Rds(on):0.03ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:25V RoHS Compliant: Yes

RoHS: Compliant

Min Qty: 2500

Container: Cut Tape

SI4800BDY-T1-GE3.

D# 16AC0256

Vishay Intertechnologies

Transistor Polarity:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:9A, On Resistance Rds(on):0.03ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:25V, Threshold Voltage Vgs:25V, No. of Pins:8PinsRoHS Compliant: No

RoHS: Not Compliant

Min Qty: 2500

Container: TAPE & REEL - FULL

Nº de pieza

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Descripción

En existencias

SI4800BDY-T1-GE3

D# NS-SI4800BDY-T1-GE3

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OEM/CM ONLY

2596

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En existencias

SI4800BDY-T1-GE3

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SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA

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En existencias

SI4800BDYT1GE3

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OEM/CM ONLY

3155

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En existencias

SI4800BDY-T1-GE3

Vishay Intertechnologies

IN stock Immediate delivery

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SI4800BDY-T1-GE3

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shipping today

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SI4800BDY-T1-GE3

D# 35140026

Vishay Intertechnologies

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RoHS: Compliant

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SI4800BDY-T1-GE3

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SI4800BDY-T1-GE3

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