Alpha & Omega Semiconductor Inc. Productos

AO3416_104

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 20V SOT23

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paquete: -

AOTF10N50FD_001

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 10A TO220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3F
• Package / Case: TO-220-3 Full Pack

Paquete: TO-220-3 Full Pack

AON6428_103

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 11A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 43A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 30W (Tc)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN (5x6)
• Package / Case: 8-PowerSMD, Flat Leads

Paquete: 8-PowerSMD, Flat Leads

AOY526

Alpha & Omega Semiconductor Inc.

MOSFET N-CH

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
• Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-251B
• Package / Case: TO-251-3 Stub Leads, IPak

Paquete: TO-251-3 Stub Leads, IPak

AOL1413

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 38A 8ULTRASO

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 15V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 38W (Tc)
• Rds On (Max) @ Id, Vgs: 17 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: UltraSO-8?
• Package / Case: 3-PowerSMD, Flat Leads

Paquete: 3-PowerSMD, Flat Leads

AOD4102

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 19A TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 19A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 4.2W (Ta), 21W (Tc)
• Rds On (Max) @ Id, Vgs: 37 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

AOW2918

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 13A TO262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 267W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA

AON6560

Alpha & Omega Semiconductor Inc.

MOSFET N-CH

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 84A (Ta), 200A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
• Rds On (Max) @ Id, Vgs: 680 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN (5x6)
• Package / Case: 8-PowerSMD, Flat Leads

Paquete: 8-PowerSMD, Flat Leads

AOTF7S60L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 7A TO220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 34W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3F
• Package / Case: TO-220-3 Full Pack

Paquete: TO-220-3 Full Pack

AO3434

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 3.5A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 52 mOhm @ 4.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3L
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

AOD442

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 38A TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 37A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

AO4578

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 20A 8-SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1128pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta)
• Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paquete: 8-SOIC (0.154", 3.90mm Width)

AOD476

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 20V 25A TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 33.3W (Tc)
• Rds On (Max) @ Id, Vgs: 21 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

AON2880

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7A DFN2X2

• FET Type: 2 N-Channel (Dual) Common Drain
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 7A
• Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 5A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-WFDFN Exposed Pad
• Supplier Device Package: 8-DFN-EP (2x2)

Paquete: 8-WFDFN Exposed Pad

AOZ6238QT

Alpha & Omega Semiconductor Inc.

IC ANLG SWITCH DUAL SPDT 10QFN

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 2
• On-State Resistance (Max): 400 mOhm
• Channel-to-Channel Matching (ΔRon): 20 mOhm
• Voltage - Supply, Single (V+): 1.65 V ~ 4.3 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 60ns, 35ns
• -3db Bandwidth: 50MHz
• Charge Injection: 30pC
• Channel Capacitance (CS(off), CD(off)): 15pF
• Current - Leakage (IS(off)) (Max): 50nA
• Crosstalk: -70dB @ 100kHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 10-UFQFN
• Supplier Device Package: 10-TQFN (1.4x1.8)

Paquete: 10-UFQFN

AOZ1017AIL#A

Alpha & Omega Semiconductor Inc.

IC REG BUCK ADJUSTABLE 3A 8SOIC

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4.5V
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 16V
• Current - Output: 3A
• Frequency - Switching: 500kHz
• Synchronous Rectifier: No
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Paquete: 8-SOIC (0.154", 3.90mm Width)

AOZ1014DI_001#A

Alpha & Omega Semiconductor Inc.

IC REG BUCK ADJUSTABLE 5A 8DFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4.5V
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 16V
• Current - Output: 5A
• Frequency - Switching: 500kHz
• Synchronous Rectifier: No
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Supplier Device Package: 8-DFN-EP (5x4)

Paquete: 8-VDFN Exposed Pad

AOZ2263AQI-15

Alpha & Omega Semiconductor Inc.

POWER IC EZBUCK

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4V
• Voltage - Input (Max): 28V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 23.8V
• Current - Output: 12A
• Frequency - Switching: 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 22-PowerTFQFN
• Supplier Device Package: 22-QFN (4x4)

Paquete: 22-PowerTFQFN

AOZ2261AQI-10

Alpha & Omega Semiconductor Inc.

POWER IC EZBUCK

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4V
• Voltage - Input (Max): 28V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 23.8V
• Current - Output: 8A
• Frequency - Switching: 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 22-PowerTFQFN
• Supplier Device Package: 22-QFN (4x4)

Paquete: 22-PowerTFQFN

AOD536

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 20.5A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 46A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 15 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paquete: -

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AOI600A70

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 8.5A TO251A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 700 V
• Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 104W (Tc)
• Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-251A
• Package / Case: TO-251-3 Stub Leads, IPAK

Paquete: -

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AIP3D15A060Q4N

Alpha & Omega Semiconductor Inc.

IPM3

• Type: IGBT
• Configuration: 3 Phase Inverter
• Current: 10 A
• Voltage: 600 V
• Voltage - Isolation: 2000Vrms
• Package / Case: 26-PowerDIP Module (1.146", 29.10mm)

Paquete: -

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AON6912ALS_102

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 52A 8DFN

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 34A (Tc), 13.8A (Ta), 52A (Tc)
• Rds On (Max) @ Id, Vgs: 13.7mOhm @ 10A, 10V, 7.3mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V, 1300pF @ 15V
• Power - Max: 1.9W (Ta), 22W (Tc), 2.1W (Ta), 30W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: 8-DFN (5x6)

Paquete: -

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AON6108FD

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 8DFN 5X6

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paquete: -

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AOB190A60CL

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 20A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 208W (Tc)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Paquete: -

AOB15B65MQ1

Alpha & Omega Semiconductor Inc.

IGBT 15A

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 45 A
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
• Power - Max: 214 W
• Switching Energy: 290µJ (on), 200µJ (off)
• Input Type: Standard
• Gate Charge: 32 nC
• Td (on/off) @ 25°C: 15ns/94ns
• Test Condition: 400V, 15A, 20Ohm, 15V
• Reverse Recovery Time (trr): 106 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)

Paquete: -

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AONR36328

Alpha & Omega Semiconductor Inc.

N

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 24W (Tc)
• Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN-EP (3x3)
• Package / Case: 8-PowerVDFN

Paquete: -

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AO4616L

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8.1A 8SOIC

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 7.1A (Ta)
• Rds On (Max) @ Id, Vgs: 20mOhm @ 8.1A, 10V, 25mOhm @ 7.1A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA, 2.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 10V, 30.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, 1573pF @ 15V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

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AOZ1380DI-01

Alpha & Omega Semiconductor Inc.

IC USB TYPE-C PROT SWITCH 20DFN

• Switch Type: USB Switch
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 3.4V ~ 22V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 10A
• Rds On (Typ): 39mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Slew Rate Controlled, Status Flag
• Fault Protection: Over Temperature, Over Voltage, Short Circuit, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 20-PowerVFDFN
• Supplier Device Package: 20-DFN-EP (3x5.2)

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AONV110A60

Alpha & Omega Semiconductor Inc.

N

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 8.3W (Ta), 357W (Tc)
• Rds On (Max) @ Id, Vgs: 110mOhm @ 19A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 4-DFN (8x8)
• Package / Case: 4-PowerTSFN

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