Página 12 - Diodes Incorporated Productos - Transistores - FET, MOSFET - Arreglos | Heisener Electronics
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Diodes Incorporated Productos - Transistores - FET, MOSFET - Arreglos

Registros 842
Página  12/31
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
DMN62D2UVTQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
Paquete: -
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-
60V
455mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
0.8nC @ 4.5V
41pF @ 30V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
DMT2005UDV-13
Diodes Incorporated

MOSFET 2N-CH 24V 50A POWERDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V
  • Power - Max: 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXC)
Paquete: -
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-
24V
50A (Tc)
7mOhm @ 14A, 10V
1.5V @ 250µA
46.7nC @ 10V
2060pF @ 10V
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXC)
DMC2025UFDBQ-13
Diodes Incorporated

MOSFET N/P-CH 20V 6A/3.5A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
Paquete: -
Request a Quote
-
20V
6A (Ta), 3.5A (Ta)
25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
1V @ 250µA, 1.4V @ 250µA
12.3nC @ 10V, 15nC @ 8V
486pF @ 10V, 642pF @ 10V
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMN61D9UDWQ-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.318A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 318mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V
  • Power - Max: 370mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: -
En existencias8.712
-
60V
318mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
0.6nC @ 4.5V
39pF @ 30V
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMC2991UDA-7B
Diodes Incorporated

MOSFET N/P-CH 20V 0.48A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 350mA (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V, 17pF @ 15V
  • Power - Max: 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X2-DFN0806-6
Paquete: -
En existencias29.592
-
20V
480mA (Ta), 350mA (Ta)
990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
1V @ 250µA
0.35nC @ 4.5V, 0.3nC @ 4.5V
21.5pF @ 16V, 17pF @ 15V
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
X2-DFN0806-6
DMG4800LSDQ-13
Diodes Incorporated

MOSFET 2N-CH 30V 7.5A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V
  • Power - Max: 1.17W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: -
En existencias6.288
-
30V
7.5A (Ta)
16mOhm @ 9A, 10V
1.6V @ 250µA
8.56nC @ 5V
798pF @ 10V
1.17W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
DMN2991UDJ-7
Diodes Incorporated

MOSFET 2N-CH 20V 0.52A SOT963

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V
  • Power - Max: 400mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
Paquete: -
En existencias49.413
-
20V
520mA (Ta)
990mOhm @ 100mA, 4.5V
1V @ 250µA
0.35nC @ 4.5V
21.5pF @ 15V
400mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
DMTH4014LDVW-13
Diodes Incorporated

MOSFET 2N-CH 40V 10.2A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
  • Power - Max: 1.16W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXD)
Paquete: -
Request a Quote
-
40V
10.2A (Ta), 27.5A (Tc)
15mOhm @ 20A, 10V
3V @ 250µA
11.2nC @ 10V
750pF @ 20V
1.16W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXD)
DMT3020UFDB-7
Diodes Incorporated

MOSFET 2N-CH 30V 6.5A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 1.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V
  • Power - Max: 860mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
Paquete: -
Request a Quote
-
30V
6.5A (Ta)
21mOhm @ 6A, 10V
1.7V @ 250µA
8.8nC @ 10V
383pF @ 15V
860mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMN2991UDJ
Diodes Incorporated

MOSFET 2N-CH 20V 0.52A SOT963

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35C @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V
  • Power - Max: 400mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
Paquete: -
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-
20V
520mA (Ta)
990mOhm @ 100mA, 4.5V
1V @ 250µA
0.35C @ 4.5V
21.5pF @ 15V
400mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
DMN11M2UCA14-7
Diodes Incorporated

MOSFET 2N-CH 12V 34A X2-TSN3027

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
  • Rds On (Max) @ Id, Vgs: 1.85mOhm @ 9.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 870µA
  • Gate Charge (Qg) (Max) @ Vgs: 71nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 6083pF @ 6V
  • Power - Max: 950mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SMD, No Lead
  • Supplier Device Package: X2-TSN3027-14
Paquete: -
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-
12V
34A (Ta)
1.85mOhm @ 9.8A, 4.5V
1.4V @ 870µA
71nC @ 4V
6083pF @ 6V
950mW
-55°C ~ 150°C (TJ)
Surface Mount
14-SMD, No Lead
X2-TSN3027-14
DMT10H072LDV-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 228pF @ 50V
  • Power - Max: 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXC)
Paquete: -
Request a Quote
-
100V
12A (Tc)
66mOhm @ 4.5A, 10V
3V @ 250µA
4.5nC @ 10V
228pF @ 50V
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXC)
DMNH6021SPDW-13
Diodes Incorporated

MOSFET 2N-CH 60V 8.2A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 32A(Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type R)
Paquete: -
Request a Quote
-
60V
8.2A (Ta), 32A(Tc)
25mOhm @ 15A, 10V
3V @ 250µA
20.1nC @ 10V
1143pF @ 25V
1.5W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerTDFN
PowerDI5060-8 (Type R)
DMTH4011SPDWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
  • Power - Max: 2.6W (Ta), 37.5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (SWP)
Paquete: -
Request a Quote
-
40V
11.1A (Ta), 42A (Tc)
15mOhm @ 20A, 10V
4V @ 250µA
10.6nC @ 10V
805pF @ 20V
2.6W (Ta), 37.5W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (SWP)
DMT3020UFDB-13
Diodes Incorporated

MOSFET 2N-CH 30V 6.5A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 1.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V
  • Power - Max: 860mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
Paquete: -
Request a Quote
-
30V
6.5A (Ta)
21mOhm @ 6A, 10V
1.7V @ 250µA
8.8nC @ 10V
383pF @ 15V
860mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMC2053UFDB-13
Diodes Incorporated

MOSFET N/P-CH 20V 4.6A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V, 12.7nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
  • Power - Max: 820mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
Paquete: -
Request a Quote
-
20V
4.6A (Ta), 3.1A (Ta)
35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V
1V @ 250µA
7.7nC @ 10V, 12.7nC @ 8V
369pF @ 10V, 440pF @ 10V
820mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
DMN5L06VAK-7
Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paquete: -
Request a Quote
Logic Level Gate
50V
280mA
2Ohm @ 50mA, 5V
1V @ 250µA
-
50pF @ 25V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMN16M0UCA6-7
Diodes Incorporated

MOSFET 2N-CH 12V 17A X4-DSN2112

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
  • Rds On (Max) @ Id, Vgs: 5.9mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X4-DSN2112-6
Paquete: -
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-
12V
17A (Ta)
5.9mOhm @ 5A, 4.5V
1.3V @ 1mA
24nC @ 4.5V
-
900mW
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
X4-DSN2112-6
DMC3401LDW-7
Diodes Incorporated

MOSFET N/P-CH 30V 0.8A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 550mA (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA, 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V, 800pC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, 19pF @ 15V
  • Power - Max: 290mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: -
En existencias11.280
-
30V
800mA (Ta), 550mA (Ta)
400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V
1.6V @ 250µA, 2.6V @ 250µA
1.2nC @ 10V, 800pC @ 10V
50pF @ 15V, 19pF @ 15V
290mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMN12M3UCA6-7
Diodes Incorporated

MOSFET 2N-CH 14V X4-DSN3118-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 14V
  • Current - Continuous Drain (Id) @ 25°C: 24.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1.41mA
  • Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 4593pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X4-DSN3118-6
Paquete: -
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-
14V
24.4A (Ta)
2.75mOhm @ 6A, 4.5V
1.4V @ 1.41mA
68.6nC @ 4V
4593pF @ 10V
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
6-SMD, No Lead
X4-DSN3118-6
DMC2053UFDBQ-7
Diodes Incorporated

MOSFET N/P-CH 20V 4.6A 6UDFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V, 12.7nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
  • Power - Max: 820mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
Paquete: -
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-
20V
4.6A (Ta), 3.1A (Ta)
35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V
1V @ 250µA
7.7nC @ 10V, 12.7nC @ 8V
369pF @ 10V, 440pF @ 10V
820mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
BSS138DWK-13
Diodes Incorporated

MOSFET 2N-CH 50V 0.31A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2.6Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Power - Max: 330mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: -
Request a Quote
-
50V
310mA (Ta)
2.6Ohm @ 200mA, 10V
1.5V @ 250µA
0.8nC @ 10V
22pF @ 25V
330mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMP2101UCB9-7
Diodes Incorporated

MOSFET 2P-CH 20V 9UWLB

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
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-
-
-
-
-
-
-
-
-
-
-
DMN66D0LDWQ-7
Diodes Incorporated

MOSFET 2N-CH 60V 0.115A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
  • Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 29.3pF @ 25V
  • Power - Max: 400mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: -
Request a Quote
-
60V
115mA (Tc)
6Ohm @ 115mA, 5V
2V @ 250µA
0.9nC @ 10V
29.3pF @ 25V
400mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMTH6010LPDW-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V
  • Power - Max: 2.8W (Ta), 37.5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
Paquete: -
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-
60V
13.1A (Ta), 47.6A (Tc)
11mOhm @ 20A, 10V
3V @ 250µA
40.2nC @ 10V
2615pF @ 30V
2.8W (Ta), 37.5W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
DMN52D0UDWQ-7
Diodes Incorporated

MOSFET BVDSS: 31V~40V SOT363 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 42.3pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
Paquete: -
Request a Quote
-
50V
350mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
1.5nC @ 10V
42.3pF @ 25V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
DMN62D0UV-13
Diodes Incorporated

MOSFET 2N-CH 60V 0.49A SOT563

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 490mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
  • Power - Max: 470mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
Paquete: -
Request a Quote
Logic Level Gate
60V
490mA (Ta)
2Ohm @ 100mA, 4.5V
1V @ 250µA
0.5nC @ 4.5V
32pF @ 30V
470mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMP2056UCA4-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V X4-DSN0808-

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFDFN
  • Supplier Device Package: X4-DSN0808-4
Paquete: -
Request a Quote
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-
-
-
-
-
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-
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Surface Mount
4-XFDFN
X4-DSN0808-4