Página 105 - Transistores - FET, MOSFET - Arreglos | Productos semiconductores discretos

Nº de pieza	Fabricantes	Descripción	Paquete	En existencias	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF5810TRPBF	Infineon Technologies	MOSFET 2P-CH 20V 2.9A 6-TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V Power - Max: 960mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	Paquete: SOT-23-6 Thin, TSOT-23-6	En existencias385.164	Logic Level Gate	20V	2.9A	90 mOhm @ 2.9A, 4.5V	1.2V @ 250µA	9.6nC @ 4.5V	650pF @ 16V	960mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
IRF8915TR	Infineon Technologies	MOSFET 2N-CH 20V 8.9A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.9A Rds On (Max) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Paquete: 8-SOIC (0.154", 3.90mm Width)	En existencias60.000	Logic Level Gate	20V	8.9A	18.3 mOhm @ 8.9A, 10V	2.5V @ 250µA	7.4nC @ 4.5V	540pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SIS902DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 75V 4A PPAK 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 186 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 38V Power - Max: 15.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	Paquete: PowerPAK? 1212-8 Dual	En existencias5.600	Standard	75V	4A	186 mOhm @ 3A, 10V	2.5V @ 250µA	6nC @ 10V	175pF @ 38V	15.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
TT8J1TR	Rohm Semiconductor	MOSFET 2P-CH 12V 2.5A TSST8 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 61 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 6V Power - Max: 1.25W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-TSST	Paquete: 8-SMD, Flat Lead	En existencias4.576	Standard	12V	2.5A	61 mOhm @ 2.5A, 4.5V	1V @ 1mA	13nC @ 4.5V	1350pF @ 6V	1.25W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-TSST
APTC80A15T1G	Microsemi Corporation	MOSFET 2N-CH 800V 28A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Power - Max: 277W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	Paquete: SP1	En existencias7.712	Standard	800V	28A	150 mOhm @ 14A, 10V	3.9V @ 2mA	180nC @ 10V	4507pF @ 25V	277W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
SI1972DH-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 1.3A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.3A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	Paquete: 6-TSSOP, SC-88, SOT-363	En existencias1.570.536	Standard	30V	1.3A	225 mOhm @ 1.3A, 10V	2.8V @ 250µA	2.8nC @ 10V	75pF @ 15V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
IXTL2X220N075T	IXYS	MOSFET 2N-CH 75V 120A I5-PAK FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V Power - Max: 150W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUSi5-Pak? Supplier Device Package: ISOPLUSi5-Pak?	Paquete: ISOPLUSi5-Pak?	En existencias4.848	Standard	75V	120A	5.5 mOhm @ 50A, 10V	4V @ 250µA	165nC @ 10V	7700pF @ 25V	150W	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUSi5-Pak?	ISOPLUSi5-Pak?
NTMD2P01R2G	ON Semiconductor	MOSFET 2P-CH 16V 2.3A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V Power - Max: 710mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Paquete: 8-SOIC (0.154", 3.90mm Width)	En existencias469.392	Logic Level Gate	16V	2.3A	100 mOhm @ 2.4A, 4.5V	1.5V @ 250µA	18nC @ 4.5V	750pF @ 16V	710mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
APTM50DHM38G	Microsemi Corporation	MOSFET 2N-CH 500V 90A SP6 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	Paquete: SP6	En existencias5.984	Standard	500V	90A	45 mOhm @ 45A, 10V	5V @ 5mA	246nC @ 10V	11200pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
FMP26-02P	IXYS	MOSFET N/P-CH 200V 26A/17A I4PAC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 26A, 17A Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V Power - Max: 125W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	Paquete: i4-Pac?-5	En existencias4.320	Standard	200V	26A, 17A	60 mOhm @ 25A, 10V	5V @ 250µA	70nC @ 10V	2720pF @ 25V	125W	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
APTMC120AM25CT3AG	Microsemi Corporation	MOSFET 2N-CH 1200V 105A SP3F FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.2V @ 4mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 197nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 1000V Power - Max: 500W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	Paquete: SP3	En existencias3.424	Standard	1200V (1.2kV)	105A	25 mOhm @ 80A, 20V	2.2V @ 4mA (Typ)	197nC @ 20V	3800pF @ 1000V	500W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
IRF7104TRPBF	Infineon Technologies	MOSFET 2P-CH 20V 2.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Paquete: 8-SOIC (0.154", 3.90mm Width)	En existencias17.280	Logic Level Gate	20V	2.3A	250 mOhm @ 1A, 10V	3V @ 250µA	25nC @ 10V	290pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AOC2806	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XDFN Supplier Device Package: 4-AlphaDFN (1.7x1.7)	Paquete: 4-XDFN	En existencias7.920	Standard	-	-	-	-	12.5nC @ 4.5V	-	700mW	-55°C ~ 150°C (TJ)	Surface Mount	4-XDFN	4-AlphaDFN (1.7x1.7)
APTM100A13SG	Microsemi Corporation	MOSFET 2N-CH 1000V 65A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 65A Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	Paquete: SP6	En existencias6.864	Standard	1000V (1kV)	65A	156 mOhm @ 32.5A, 10V	5V @ 6mA	562nC @ 10V	15200pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
NTLJD3115PT1G	ON Semiconductor	MOSFET 2P-CH 20V 2.3A 6-WDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V Power - Max: 710mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	Paquete: 6-WDFN Exposed Pad	En existencias122.064	Logic Level Gate	20V	2.3A	100 mOhm @ 2A, 4.5V	1V @ 250µA	6.2nC @ 4.5V	531pF @ 10V	710mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
ECH8695R-TL-W	ON Semiconductor	MOSFET 2N-CH 24V 11A SOT28 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/ECH8	Paquete: 8-SMD, Flat Lead	En existencias17.904	Logic Level Gate, 2.5V Drive	24V	11A	9.1 mOhm @ 5A, 4.5V	1.3V @ 1mA	10nC @ 4.5V	-	1.4W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	SOT-28FL/ECH8
MTM78E2B0LBF	Panasonic Electronic Components	MOSFET 2N-CH 20V 4A WSMINI8-F1-B FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 25 mOhm @ 2A, 4V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: WSMini8-F1-B	Paquete: 8-SMD, Flat Lead	En existencias458.880	Standard	20V	4A	25 mOhm @ 2A, 4V	1.3V @ 1mA	-	1100pF @ 10V	150mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	WSMini8-F1-B
SI5504BDC-T1-E3	Vishay Siliconix	MOSFET N/P-CH 30V 4A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Power - Max: 3.12W, 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	Paquete: 8-SMD, Flat Lead	En existencias75.702	Logic Level Gate	30V	4A, 3.7A	65 mOhm @ 3.1A, 10V	3V @ 250µA	7nC @ 10V	220pF @ 15V	3.12W, 3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
DMC2710UVT-7	Diodes Incorporated	MOSFET N/P-CH 20V 1.2A TSOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 900mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-23-6	Paquete: -	En existencias7.995	-	20V	1.2A (Ta), 900mA (Ta)	400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V	1V @ 250µA	0.6nC @ 4.5V, 0.7nC @ 4.5V	42pF @ 16V, 49pF @ 16V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-23-6
NTMFD024N06CT1G	onsemi	MOSFET 2N-CH 60V 8A/24A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V Power - Max: 3.1W (Ta), 28W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	Paquete: -	Request a Quote	-	60V	8A (Ta), 24A (Tc)	22.6mOhm @ 3A, 10V	4V @ 20µA	5.7nC @ 10V	333pF @ 30V	3.1W (Ta), 28W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
DMTH4014LDVW-7	Diodes Incorporated	MOSFET 2N-CH 40V 10.2A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V Power - Max: 1.16W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXD)	Paquete: -	Request a Quote	-	40V	10.2A (Ta), 27.5A (Tc)	15mOhm @ 20A, 10V	3V @ 250µA	11.2nC @ 10V	750pF @ 20V	1.16W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXD)
AO4807L_102	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 6A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Paquete: -	Request a Quote	-	30V	6A (Ta)	35mOhm @ 6A, 10V	2.4V @ 250µA	16nC @ 10V	760pF @ 15V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
G06N06S2	Goford Semiconductor	MOSFET 2N-CH 60V 6A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 30V Power - Max: 2.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	Paquete: -	Request a Quote	-	60V	6A (Tc)	25mOhm @ 6A, 10V	2.4V @ 250µA	46nC @ 10V	1600pF @ 30V	2.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AO6602_DELTA	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 3.5A 6TSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.7A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 100mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V, 5.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V, 240pF @ 15V Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	Paquete: -	Request a Quote	-	30V	3.5A (Ta), 2.7A (Ta)	50mOhm @ 3.5A, 10V, 100mOhm @ 2.7A, 10V	2.5V @ 250µA, 2.4V @ 250µA	5nC @ 10V, 5.2nC @ 10V	210pF @ 15V, 240pF @ 15V	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
SIL2300A-TP	Micro Commercial Co	MOSFET 2N-CH 20V 7A SOT23-6L FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6L	Paquete: -	En existencias3.351	-	20V	7A	18mOhm @ 5A, 4.5V	1V @ 250µA	9.2nC @ 4.5V	900pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6L
DMP31D7LDWQ-7	Diodes Incorporated	MOSFET 2P-CH 30V 0.55A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Power - Max: 290mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Paquete: -	En existencias9.000	-	30V	550mA (Ta)	900mOhm @ 420mA, 10V	2.6V @ 250µA	0.8nC @ 10V	19pF @ 15V	290mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
UPA2374T1P-E1-A	Renesas Electronics Corporation	MOSFET N-CH DUAL LGA FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM120AM027D3AG	Microchip Technology	SIC 2N-CH 1200V 733A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Vgs(th) (Max) @ Id: 2.8V @ 27mA Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V Power - Max: 2.97kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Paquete: -	Request a Quote	-	1200V (1.2kV)	733A (Tc)	3.5mOhm @ 360A, 20V	2.8V @ 27mA	2088nC @ 20V	27000pF @ 1000V	2.97kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
FF4MR12W2M1HB11BPSA1	Infineon Technologies	SIC 2N-CH 1200V 170A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 170A (Tj) Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V Vgs(th) (Max) @ Id: 5.15V @ 80mA Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	Paquete: -	En existencias51	-	1200V (1.2kV)	170A (Tj)	4mOhm @ 200A, 18V	5.15V @ 80mA	594nC @ 18V	17600pF @ 800V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	Module
SIS590DN-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 100V 2.7A PPAK1212 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc) Rds On (Max) @ Id, Vgs: 167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 265pF 2 50V, 325pF @ 50V Power - Max: 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Supplier Device Package: PowerPAK® 1212-8 Dual	Paquete: -	Request a Quote	-	100V	2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)	167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V	2.5V @ 250µA	-	265pF 2 50V, 325pF @ 50V	2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual

IRF5810TRPBF

Infineon Technologies

MOSFET 2P-CH 20V 2.9A 6-TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V
Power - Max: 960mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

Paquete: SOT-23-6 Thin, TSOT-23-6

En existencias385.164

Logic Level Gate

20V

2.9A

90 mOhm @ 2.9A, 4.5V

1.2V @ 250µA

9.6nC @ 4.5V

650pF @ 16V

960mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

IRF8915TR

Infineon Technologies

MOSFET 2N-CH 20V 8.9A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8.9A
Rds On (Max) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias60.000

Logic Level Gate

20V

8.9A

18.3 mOhm @ 8.9A, 10V

2.5V @ 250µA

7.4nC @ 4.5V

540pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SIS902DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 75V 4A PPAK 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 186 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 38V
Power - Max: 15.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

Paquete: PowerPAK? 1212-8 Dual

En existencias5.600

Standard

75V

4A

186 mOhm @ 3A, 10V

2.5V @ 250µA

6nC @ 10V

175pF @ 38V

15.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

TT8J1TR

Rohm Semiconductor

MOSFET 2P-CH 12V 2.5A TSST8

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 61 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 6V
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-TSST

Paquete: 8-SMD, Flat Lead

En existencias4.576

Standard

12V

2.5A

61 mOhm @ 2.5A, 4.5V

1V @ 1mA

13nC @ 4.5V

1350pF @ 6V

1.25W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-TSST

APTC80A15T1G

Microsemi Corporation

MOSFET 2N-CH 800V 28A SP1

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Power - Max: 277W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

Paquete: SP1

En existencias7.712

Standard

800V

28A

150 mOhm @ 14A, 10V

3.9V @ 2mA

180nC @ 10V

4507pF @ 25V

277W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

SI1972DH-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 1.3A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

Paquete: 6-TSSOP, SC-88, SOT-363

En existencias1.570.536

Standard

30V

1.3A

225 mOhm @ 1.3A, 10V

2.8V @ 250µA

2.8nC @ 10V

75pF @ 15V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

IXTL2X220N075T

IXYS

MOSFET 2N-CH 75V 120A I5-PAK

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V
Power - Max: 150W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUSi5-Pak?
Supplier Device Package: ISOPLUSi5-Pak?

Paquete: ISOPLUSi5-Pak?

En existencias4.848

Standard

75V

120A

5.5 mOhm @ 50A, 10V

4V @ 250µA

165nC @ 10V

7700pF @ 25V

150W

-55°C ~ 175°C (TJ)

Through Hole

ISOPLUSi5-Pak?

NTMD2P01R2G

ON Semiconductor

MOSFET 2P-CH 16V 2.3A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 16V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Power - Max: 710mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias469.392

Logic Level Gate

16V

2.3A

100 mOhm @ 2.4A, 4.5V

1.5V @ 250µA

18nC @ 4.5V

750pF @ 16V

710mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

APTM50DHM38G

Microsemi Corporation

MOSFET 2N-CH 500V 90A SP6

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Power - Max: 694W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

Paquete: SP6

En existencias5.984

Standard

500V

90A

45 mOhm @ 45A, 10V

5V @ 5mA

246nC @ 10V

11200pF @ 25V

694W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

FMP26-02P

IXYS

MOSFET N/P-CH 200V 26A/17A I4PAC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 26A, 17A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
Power - Max: 125W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

Paquete: i4-Pac?-5

En existencias4.320

Standard

200V

26A, 17A

60 mOhm @ 25A, 10V

5V @ 250µA

70nC @ 10V

2720pF @ 25V

125W

-55°C ~ 150°C (TJ)

Through Hole

i4-Pac?-5

ISOPLUS i4-PAC?

APTMC120AM25CT3AG

Microsemi Corporation

MOSFET 2N-CH 1200V 105A SP3F

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.2V @ 4mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 197nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 1000V
Power - Max: 500W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

Paquete: SP3

En existencias3.424

Standard

1200V (1.2kV)

105A

25 mOhm @ 80A, 20V

2.2V @ 4mA (Typ)

197nC @ 20V

3800pF @ 1000V

500W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

IRF7104TRPBF

Infineon Technologies

MOSFET 2P-CH 20V 2.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias17.280

Logic Level Gate

20V

2.3A

250 mOhm @ 1A, 10V

3V @ 250µA

25nC @ 10V

290pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AOC2806

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XDFN
Supplier Device Package: 4-AlphaDFN (1.7x1.7)

Paquete: 4-XDFN

En existencias7.920

Standard

-

12.5nC @ 4.5V

-

700mW

-55°C ~ 150°C (TJ)

Surface Mount

4-XDFN

4-AlphaDFN (1.7x1.7)

APTM100A13SG

Microsemi Corporation

MOSFET 2N-CH 1000V 65A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 65A
Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

Paquete: SP6

En existencias6.864

Standard

1000V (1kV)

65A

156 mOhm @ 32.5A, 10V

5V @ 6mA

562nC @ 10V

15200pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

NTLJD3115PT1G

ON Semiconductor

MOSFET 2P-CH 20V 2.3A 6-WDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Power - Max: 710mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

Paquete: 6-WDFN Exposed Pad

En existencias122.064

Logic Level Gate

20V

2.3A

100 mOhm @ 2A, 4.5V

1V @ 250µA

6.2nC @ 4.5V

531pF @ 10V

710mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

ECH8695R-TL-W

ON Semiconductor

MOSFET 2N-CH 24V 11A SOT28

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/ECH8

Paquete: 8-SMD, Flat Lead

En existencias17.904

Logic Level Gate, 2.5V Drive

24V

11A

9.1 mOhm @ 5A, 4.5V

1.3V @ 1mA

10nC @ 4.5V

-

1.4W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

SOT-28FL/ECH8

MTM78E2B0LBF

Panasonic Electronic Components

MOSFET 2N-CH 20V 4A WSMINI8-F1-B

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 2A, 4V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: WSMini8-F1-B

Paquete: 8-SMD, Flat Lead

En existencias458.880

Standard

20V

4A

25 mOhm @ 2A, 4V

1.3V @ 1mA

-

1100pF @ 10V

150mW

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

WSMini8-F1-B

SI5504BDC-T1-E3

Vishay Siliconix

MOSFET N/P-CH 30V 4A 1206-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Power - Max: 3.12W, 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

Paquete: 8-SMD, Flat Lead

En existencias75.702

Logic Level Gate

30V

4A, 3.7A

65 mOhm @ 3.1A, 10V

3V @ 250µA

7nC @ 10V

220pF @ 15V

3.12W, 3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

DMC2710UVT-7

Diodes Incorporated

MOSFET N/P-CH 20V 1.2A TSOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 900mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-23-6

Paquete: -

En existencias7.995

-

20V

1.2A (Ta), 900mA (Ta)

400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V

1V @ 250µA

0.6nC @ 4.5V, 0.7nC @ 4.5V

42pF @ 16V, 49pF @ 16V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-23-6

NTMFD024N06CT1G

onsemi

MOSFET 2N-CH 60V 8A/24A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V
Power - Max: 3.1W (Ta), 28W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

Paquete: -

Request a Quote

-

60V

8A (Ta), 24A (Tc)

22.6mOhm @ 3A, 10V

4V @ 20µA

5.7nC @ 10V

333pF @ 30V

3.1W (Ta), 28W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

DMTH4014LDVW-7

Diodes Incorporated

MOSFET 2N-CH 40V 10.2A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Power - Max: 1.16W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXD)

Paquete: -

Request a Quote

-

40V

10.2A (Ta), 27.5A (Tc)

15mOhm @ 20A, 10V

3V @ 250µA

11.2nC @ 10V

750pF @ 20V

1.16W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXD)

AO4807L_102

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 6A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

Paquete: -

Request a Quote

-

30V

6A (Ta)

35mOhm @ 6A, 10V

2.4V @ 250µA

16nC @ 10V

760pF @ 15V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

G06N06S2

Goford Semiconductor

MOSFET 2N-CH 60V 6A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 30V
Power - Max: 2.1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

Paquete: -

Request a Quote

-

60V

6A (Tc)

25mOhm @ 6A, 10V

2.4V @ 250µA

46nC @ 10V

1600pF @ 30V

2.1W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

AO6602_DELTA

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 3.5A 6TSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, 100mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V, 5.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V, 240pF @ 15V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

Paquete: -

Request a Quote

-

30V

3.5A (Ta), 2.7A (Ta)

50mOhm @ 3.5A, 10V, 100mOhm @ 2.7A, 10V

2.5V @ 250µA, 2.4V @ 250µA

5nC @ 10V, 5.2nC @ 10V

210pF @ 15V, 240pF @ 15V

1.15W

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

SIL2300A-TP

Micro Commercial Co

MOSFET 2N-CH 20V 7A SOT23-6L

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6L

Paquete: -

En existencias3.351

-

20V

7A

18mOhm @ 5A, 4.5V

1V @ 250µA

9.2nC @ 4.5V

900pF @ 10V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-23-6L

DMP31D7LDWQ-7

Diodes Incorporated

MOSFET 2P-CH 30V 0.55A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
Power - Max: 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

Paquete: -

En existencias9.000

-

30V

550mA (Ta)

900mOhm @ 420mA, 10V

2.6V @ 250µA

0.8nC @ 10V

19pF @ 15V

290mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

UPA2374T1P-E1-A

Renesas Electronics Corporation

MOSFET N-CH DUAL LGA

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

Paquete: -

Request a Quote

-

MSCSM120AM027D3AG

Microchip Technology

SIC 2N-CH 1200V 733A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
Power - Max: 2.97kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

Paquete: -

Request a Quote

-

1200V (1.2kV)

733A (Tc)

3.5mOhm @ 360A, 20V

2.8V @ 27mA

2088nC @ 20V

27000pF @ 1000V

2.97kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

FF4MR12W2M1HB11BPSA1

Infineon Technologies

SIC 2N-CH 1200V 170A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

Paquete: -

En existencias51

-

1200V (1.2kV)

170A (Tj)

4mOhm @ 200A, 18V

5.15V @ 80mA

594nC @ 18V

17600pF @ 800V

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SIS590DN-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 100V 2.7A PPAK1212

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 265pF 2 50V, 325pF @ 50V
Power - Max: 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual

Paquete: -

Request a Quote

-

100V

2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)

167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V

2.5V @ 250µA

-

265pF 2 50V, 325pF @ 50V

2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8 Dual