Página 12 - Infineon Technologies Productos - Diodos - Rectificadores - Simple

Nº de pieza	Fabricantes	Descripción	Paquete	En existencias	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IRD3CH42DD6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paquete: -	En existencias3.328	-	-	-	-	-	-	-	-	-	-	-
IRD3CH42DB6	Infineon Technologies	DIODE GEN PURP 1.2KV 75A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 2.7V @ 75A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 285ns Current - Reverse Leakage @ Vr: 1.5µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 150°C	Paquete: Die	En existencias5.136	1200V	75A	2.7V @ 75A	Fast Recovery =< 500ns, > 200mA (Io)	285ns	1.5µA @ 1200V	-	Surface Mount	Die	Die	-40°C ~ 150°C
IRD3CH31DF6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paquete: -	En existencias7.440	-	-	-	-	-	-	-	-	-	-	-
IRD3CH31DD6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paquete: -	En existencias4.960	-	-	-	-	-	-	-	-	-	-	-
IRD3CH31DB6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paquete: -	En existencias3.424	-	-	-	-	-	-	-	-	-	-	-
IRD3CH24DF6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paquete: -	En existencias3.808	-	-	-	-	-	-	-	-	-	-	-
IRD3CH24DD6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paquete: -	En existencias5.904	-	-	-	-	-	-	-	-	-	-	-
IRD3CH24DB6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paquete: -	En existencias7.552	-	-	-	-	-	-	-	-	-	-	-
IRD3CH16DF6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paquete: -	En existencias7.792	-	-	-	-	-	-	-	-	-	-	-
IRD3CH16DD6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paquete: -	En existencias6.512	-	-	-	-	-	-	-	-	-	-	-
IRD3CH16DB6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paquete: -	En existencias4.976	-	-	-	-	-	-	-	-	-	-	-
IRD3CH11DF6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paquete: -	En existencias6.896	-	-	-	-	-	-	-	-	-	-	-
IRD3CH11DD6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paquete: -	En existencias7.888	-	-	-	-	-	-	-	-	-	-	-
IRD3CH11DB6	Infineon Technologies	DIODE GEN PURP 1.2KV 25A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 2.7V @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 190ns Current - Reverse Leakage @ Vr: 700nA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 150°C	Paquete: Die	En existencias3.280	1200V	25A	2.7V @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	190ns	700nA @ 1200V	-	Surface Mount	Die	Die	-40°C ~ 150°C
IRD3CH101DF6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paquete: -	En existencias5.632	-	-	-	-	-	-	-	-	-	-	-
IRD3CH101DD6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Paquete: -	En existencias7.008	-	-	-	-	-	-	-	-	-	-	-
IRD3CH101DB6	Infineon Technologies	DIODE GEN PURP 1.2KV 200A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 200A Voltage - Forward (Vf) (Max) @ If: 2.7V @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 360ns Current - Reverse Leakage @ Vr: 3.6µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C	Paquete: Die	En existencias7.488	1200V	200A	2.7V @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	360ns	3.6µA @ 1200V	-	Surface Mount	Die	Die	-40°C ~ 175°C
IDL12G65C5XUMA1	Infineon Technologies	DIODE SCHOTTKY 650V 12A VSON-4 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 190µA @ 650V Capacitance @ Vr, F: 360pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55°C ~ 150°C	Paquete: 4-PowerTSFN	En existencias3.024	650V	12A (DC)	1.7V @ 12A	No Recovery Time > 500mA (Io)	0ns	190µA @ 650V	360pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 150°C
IDL10G65C5XUMA1	Infineon Technologies	DIODE SCHOTTKY 650V 10A VSON-4 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 180µA @ 650V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55°C ~ 150°C	Paquete: 4-PowerTSFN	En existencias4.496	650V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	180µA @ 650V	300pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 150°C
IDL08G65C5XUMA1	Infineon Technologies	DIODE SCHOTTKY 650V 8A VSON-4 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 140µA @ 650V Capacitance @ Vr, F: 250pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55°C ~ 150°C	Paquete: 4-PowerTSFN	En existencias4.976	650V	8A (DC)	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	140µA @ 650V	250pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 150°C
IDL06G65C5XUMA1	Infineon Technologies	DIODE SCHOTTKY 650V 6A VSON-4 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 110µA @ 650V Capacitance @ Vr, F: 190pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55°C ~ 150°C	Paquete: 4-PowerTSFN	En existencias7.568	650V	6A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	110µA @ 650V	190pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 150°C
IDL04G65C5XUMA1	Infineon Technologies	DIODE SCHOTTKY 650V 4A VSON-4 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 70µA @ 650V Capacitance @ Vr, F: 130pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55°C ~ 175°C	Paquete: 4-PowerTSFN	En existencias2.576	650V	4A (DC)	1.7V @ 4A	No Recovery Time > 500mA (Io)	0ns	70µA @ 650V	130pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 175°C
IDL02G65C5XUMA1	Infineon Technologies	DIODE SCHOTTKY 650V 2A VSON-4 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 35µA @ 650V Capacitance @ Vr, F: 70pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Supplier Device Package: PG-VSON-4 Operating Temperature - Junction: -55°C ~ 175°C	Paquete: 4-PowerTSFN	En existencias4.816	650V	2A (DC)	1.7V @ 2A	No Recovery Time > 500mA (Io)	0ns	35µA @ 650V	70pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 175°C
IDK12G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 12A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 2.1mA @ 650V Capacitance @ Vr, F: 360pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	En existencias6.144	650V	12A (DC)	1.8V @ 12A	No Recovery Time > 500mA (Io)	0ns	2.1mA @ 650V	360pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK10G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 10A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1.7mA @ 650V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	En existencias3.312	650V	10A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	1.7mA @ 650V	300pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK09G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 9A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 9A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 9A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1.6mA @ 650V Capacitance @ Vr, F: 270pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	En existencias2.656	650V	9A (DC)	1.8V @ 9A	No Recovery Time > 500mA (Io)	0ns	1.6mA @ 650V	270pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK08G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 8A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1.4mA @ 650V Capacitance @ Vr, F: 250pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	En existencias5.296	650V	8A (DC)	1.8V @ 8A	No Recovery Time > 500mA (Io)	0ns	1.4mA @ 650V	250pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK06G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 6A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1.1mA @ 650V Capacitance @ Vr, F: 190pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	En existencias3.552	650V	6A (DC)	1.8V @ 6A	No Recovery Time > 500mA (Io)	0ns	1.1mA @ 650V	190pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK05G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 5A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 830µA @ 650V Capacitance @ Vr, F: 160pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	En existencias4.736	650V	5A (DC)	1.8V @ 5A	No Recovery Time > 500mA (Io)	0ns	830µA @ 650V	160pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK04G65C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 650V 4A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 670µA @ 650V Capacitance @ Vr, F: 130pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55°C ~ 175°C	Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	En existencias5.168	650V	4A (DC)	1.8V @ 4A	No Recovery Time > 500mA (Io)	0ns	670µA @ 650V	130pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C

IRD3CH42DD6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paquete: -

En existencias3.328

-

IRD3CH42DB6

Infineon Technologies

DIODE GEN PURP 1.2KV 75A DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 75A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 285ns
Current - Reverse Leakage @ Vr: 1.5µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C

Paquete: Die

En existencias5.136

1200V

75A

2.7V @ 75A

Fast Recovery =< 500ns, > 200mA (Io)

285ns

1.5µA @ 1200V

-

Surface Mount

Die

-40°C ~ 150°C

IRD3CH31DF6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paquete: -

En existencias7.440

-

IRD3CH31DD6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paquete: -

En existencias4.960

-

IRD3CH31DB6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paquete: -

En existencias3.424

-

IRD3CH24DF6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paquete: -

En existencias3.808

-

IRD3CH24DD6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paquete: -

En existencias5.904

-

IRD3CH24DB6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paquete: -

En existencias7.552

-

IRD3CH16DF6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paquete: -

En existencias7.792

-

IRD3CH16DD6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paquete: -

En existencias6.512

-

IRD3CH16DB6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paquete: -

En existencias4.976

-

IRD3CH11DF6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paquete: -

En existencias6.896

-

IRD3CH11DD6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paquete: -

En existencias7.888

-

IRD3CH11DB6

Infineon Technologies

DIODE GEN PURP 1.2KV 25A DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 25A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190ns
Current - Reverse Leakage @ Vr: 700nA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C

Paquete: Die

En existencias3.280

1200V

25A

2.7V @ 25A

Fast Recovery =< 500ns, > 200mA (Io)

190ns

700nA @ 1200V

-

Surface Mount

Die

-40°C ~ 150°C

IRD3CH101DF6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paquete: -

En existencias5.632

-

IRD3CH101DD6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Paquete: -

En existencias7.008

-

IRD3CH101DB6

Infineon Technologies

DIODE GEN PURP 1.2KV 200A DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 360ns
Current - Reverse Leakage @ Vr: 3.6µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C

Paquete: Die

En existencias7.488

1200V

200A

2.7V @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

360ns

3.6µA @ 1200V

-

Surface Mount

Die

-40°C ~ 175°C

IDL12G65C5XUMA1

Infineon Technologies

DIODE SCHOTTKY 650V 12A VSON-4

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 190µA @ 650V
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: 4-PowerTSFN

En existencias3.024

650V

12A (DC)

1.7V @ 12A

No Recovery Time > 500mA (Io)

0ns

190µA @ 650V

360pF @ 1V, 1MHz

Surface Mount

4-PowerTSFN

PG-VSON-4

-55°C ~ 150°C

IDL10G65C5XUMA1

Infineon Technologies

DIODE SCHOTTKY 650V 10A VSON-4

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 180µA @ 650V
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: 4-PowerTSFN

En existencias4.496

650V

10A (DC)

1.7V @ 10A

No Recovery Time > 500mA (Io)

0ns

180µA @ 650V

300pF @ 1V, 1MHz

Surface Mount

4-PowerTSFN

PG-VSON-4

-55°C ~ 150°C

IDL08G65C5XUMA1

Infineon Technologies

DIODE SCHOTTKY 650V 8A VSON-4

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 140µA @ 650V
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: 4-PowerTSFN

En existencias4.976

650V

8A (DC)

1.7V @ 8A

No Recovery Time > 500mA (Io)

0ns

140µA @ 650V

250pF @ 1V, 1MHz

Surface Mount

4-PowerTSFN

PG-VSON-4

-55°C ~ 150°C

IDL06G65C5XUMA1

Infineon Technologies

DIODE SCHOTTKY 650V 6A VSON-4

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 110µA @ 650V
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: 4-PowerTSFN

En existencias7.568

650V

6A (DC)

1.7V @ 6A

No Recovery Time > 500mA (Io)

0ns

110µA @ 650V

190pF @ 1V, 1MHz

Surface Mount

4-PowerTSFN

PG-VSON-4

-55°C ~ 150°C

IDL04G65C5XUMA1

Infineon Technologies

DIODE SCHOTTKY 650V 4A VSON-4

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 70µA @ 650V
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C

Paquete: 4-PowerTSFN

En existencias2.576

650V

4A (DC)

1.7V @ 4A

No Recovery Time > 500mA (Io)

0ns

70µA @ 650V

130pF @ 1V, 1MHz

Surface Mount

4-PowerTSFN

PG-VSON-4

-55°C ~ 175°C

IDL02G65C5XUMA1

Infineon Technologies

DIODE SCHOTTKY 650V 2A VSON-4

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 35µA @ 650V
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C

Paquete: 4-PowerTSFN

En existencias4.816

650V

2A (DC)

1.7V @ 2A

No Recovery Time > 500mA (Io)

0ns

35µA @ 650V

70pF @ 1V, 1MHz

Surface Mount

4-PowerTSFN

PG-VSON-4

-55°C ~ 175°C

IDK12G65C5XTMA1

Infineon Technologies

DIODE SCHOTTKY 650V 12A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 12A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 2.1mA @ 650V
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

En existencias6.144

650V

12A (DC)

1.8V @ 12A

No Recovery Time > 500mA (Io)

0ns

2.1mA @ 650V

360pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-2

-55°C ~ 175°C

IDK10G65C5XTMA1

Infineon Technologies

DIODE SCHOTTKY 650V 10A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1.7mA @ 650V
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

En existencias3.312

650V

10A (DC)

1.8V @ 10A

No Recovery Time > 500mA (Io)

0ns

1.7mA @ 650V

300pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-2

-55°C ~ 175°C

IDK09G65C5XTMA1

Infineon Technologies

DIODE SCHOTTKY 650V 9A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 9A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 9A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1.6mA @ 650V
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

En existencias2.656

650V

9A (DC)

1.8V @ 9A

No Recovery Time > 500mA (Io)

0ns

1.6mA @ 650V

270pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-2

-55°C ~ 175°C

IDK08G65C5XTMA1

Infineon Technologies

DIODE SCHOTTKY 650V 8A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1.4mA @ 650V
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

En existencias5.296

650V

8A (DC)

1.8V @ 8A

No Recovery Time > 500mA (Io)

0ns

1.4mA @ 650V

250pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-2

-55°C ~ 175°C

IDK06G65C5XTMA1

Infineon Technologies

DIODE SCHOTTKY 650V 6A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1.1mA @ 650V
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

En existencias3.552

650V

6A (DC)

1.8V @ 6A

No Recovery Time > 500mA (Io)

0ns

1.1mA @ 650V

190pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-2

-55°C ~ 175°C

IDK05G65C5XTMA1

Infineon Technologies

DIODE SCHOTTKY 650V 5A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 830µA @ 650V
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

En existencias4.736

650V

5A (DC)

1.8V @ 5A

No Recovery Time > 500mA (Io)

0ns

830µA @ 650V

160pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-2

-55°C ~ 175°C

IDK04G65C5XTMA1

Infineon Technologies

DIODE SCHOTTKY 650V 4A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 670µA @ 650V
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

En existencias5.168

650V

4A (DC)

1.8V @ 4A

No Recovery Time > 500mA (Io)

0ns

670µA @ 650V

130pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-2

-55°C ~ 175°C

Infineon Technologies Productos - Diodos - Rectificadores - Simple

Infineon Technologies Productos - Diodos - Rectificadores - Simple