Infineon Technologies Productos

IRG7CH50UED

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

SGD06N60BUMA1

Infineon Technologies

IGBT 600V 12A 68W TO252-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 24A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
• Power - Max: 68W
• Switching Energy: 215µJ
• Input Type: Standard
• Gate Charge: 32nC
• Td (on/off) @ 25°C: 25ns/220ns
• Test Condition: 400V, 6A, 50 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

IPP040N06N3GHKSA1

Infineon Technologies

MOSFET N-CH 60V 90A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 188W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

Paquete: TO-220-3

IRFB3077GPBF

Infineon Technologies

MOSFET N-CH 75V 120A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 370W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paquete: TO-220-3

IPP11N03LA

Infineon Technologies

MOSFET N-CH 25V 30A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 52W (Tc)
• Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

Paquete: TO-220-3

IRLR8503TRPBF

Infineon Technologies

MOSFET N-CH 30V 44A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 62W (Tc)
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

IRL540NL

Infineon Technologies

MOSFET N-CH 100V 36A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
• Rds On (Max) @ Id, Vgs: 44 mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA

IPC218N04N3X7SA1

Infineon Technologies

MV POWER MOS

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paquete: -

IPI60R380C6XKSA1

Infineon Technologies

MOSFET N-CH 600V 10.6A TO262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 320µA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA

IPD50N04S4L08ATMA1

Infineon Technologies

MOSFET N-CH 40V 50A TO252-3-313

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 17µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 25V
• Vgs (Max): +20V, -16V
• FET Feature: -
• Power Dissipation (Max): 46W (Tc)
• Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-313
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

IRU3027CWTR

Infineon Technologies

IC CTRL/REG SYNC BUCK 28-SOIC

• Applications: Controller, Intel Processor
• Voltage - Input: 5V, 12V
• Number of Outputs: 4
• Voltage - Output: 1.08 V ~ 1.85 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOIC

Paquete: 28-SOIC (0.295", 7.50mm Width)

IR3536AMTRPBF

Infineon Technologies

IC REG CTRLR DL BUCK PWM 48QFN

• Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: -20°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

Paquete: 48-VFQFN Exposed Pad

IFX1117GS V33

Infineon Technologies

IC REG LINEAR 3.3V 1A SOT223-4

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 15V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.4V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 65dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

Paquete: TO-261-4, TO-261AA

TLE4275AKSA1

Infineon Technologies

IC REG LINEAR 400MA

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 400mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: -
• Supplier Device Package: -

Paquete: -

BTS5234LAUMA1

Infineon Technologies

IC HIGH SIDE PWR SWITCH PDSO-12

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 4.5 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3.5A
• Rds On (Typ): 45 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-12-2

Paquete: 12-BSOP (0.295", 7.50mm Width) Exposed Pad

ICE2QS01FKLA1

Infineon Technologies

IC PWM CONTROLLER 8DIP

• Mode: -
• Frequency - Switching: 80kHz
• Current - Startup: 300µA
• Voltage - Supply: 11 V ~ 25 V
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: PG-DIP-8

Paquete: 8-DIP (0.300", 7.62mm)

IR1167BSPBF

Infineon Technologies

IC MOSFET DRIVER N-CHAN 8-SOIC

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 12 V ~ 18 V
• Logic Voltage - VIL, VIH: 2V, 2.15V
• Current - Peak Output (Source, Sink): 2A, 7A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 18ns, 10ns
• Operating Temperature: -25°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Paquete: 8-SOIC (0.154", 3.90mm Width)

TLE7250XLEXUMA1

Infineon Technologies

IC TXRX CAN 1MBPS PG-TSON-8

• Type: Transceiver
• Protocol: CAN
• Number of Drivers/Receivers: 1/1
• Duplex: Half
• Receiver Hysteresis: 100mV
• Data Rate: 1Mbps
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-TDFN Exposed Pad
• Supplier Device Package: PG-TSON-8

Paquete: 8-TDFN Exposed Pad

TLE4990E6782HAXA1

Infineon Technologies

SENSOR LINEAR ANALOG SSO4

• Type: Linear
• Technology: Hall Effect
• Axis: Single
• Output Type: Analog Voltage
• Sensing Range: 0mT ~ 400mT
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Supply (Max): 5.5mA
• Current - Output (Max): 1.2mA
• Resolution: -
• Bandwidth: -
• Operating Temperature: -40°C ~ 150°C (TA)
• Features: Programmable, Temperature Compensated
• Package / Case: 4-SIP, SSO-4-01
• Supplier Device Package: P-SSO-4-1

Paquete: 4-SIP, SSO-4-01

SLE 66R35 MFCC1

Infineon Technologies

IC MEMORY CHIP 1KBYTE S-MFCC1-2

• Type: RFID Transponder
• Frequency: 13.56MHz
• Standards: ISO 14443
• Interface: -
• Voltage - Supply: -
• Operating Temperature: -
• Package / Case: MFCC1 Chip Card Module
• Supplier Device Package: P-MCC2-2-1

Paquete: MFCC1 Chip Card Module

PTMA180402MV1AUMA1

Infineon Technologies

IC AMP RF LDMOS 40W DSO-20

• Frequency: 1.8GHz ~ 2.1GHz
• P1dB: -
• Gain: 30dB
• Noise Figure: -
• RF Type: -
• Voltage - Supply: -
• Current - Supply: -
• Test Frequency: -
• Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-20-63

Paquete: 20-SOIC (0.433", 11.00mm Width) Exposed Pad

IS26KL512S-DABLA100

Infineon Technologies

INFINEON

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: HyperFlash
• Memory Size: 512Mbit
• Memory Interface: HyperBus
• Clock Frequency: 100 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 96 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-VFBGA (6x8)

Paquete: -

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CG8653AA

Infineon Technologies

IC PSOC4 8SOIC

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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FF3MR12KM1HOSA1

Infineon Technologies

SIC 2N-CH 1200V 375A AG-62MM

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
• Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V
• Vgs(th) (Max) @ Id: 5.15V @ 168mA
• Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-62MM

Paquete: -

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T880N18TOFXPSA1

Infineon Technologies

SCR MODULE 1800V 1750A DO200AB

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 880 A
• Current - On State (It (RMS)) (Max): 1750 A
• Voltage - Gate Trigger (Vgt) (Max): 2.2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 120°C
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK

Paquete: -

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CY8C4124LQS-S413T

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 34
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

Paquete: -

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TC1782N320F180HRBAKXUMA2

Infineon Technologies

IC MCU 32BIT 2.5MB FLASH 176LQFP

• Core Processor: TriCore™
• Core Size: 32-Bit Single-Core
• Speed: 180MHz
• Connectivity: ASC, CANbus, FlexRay, MLI, MSC, SSC
• Peripherals: DMA, POR, WDT
• Number of I/O: 86
• Program Memory Size: 2.5MB (2.5M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 176K x 8
• Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V
• Data Converters: A/D 36x10b/12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 176-LQFP
• Supplier Device Package: PG-LQFP-176-20

Paquete: -

CY8C6248AZI-S2D44

Infineon Technologies

IC MCU 32BIT 1MB FLASH 128TQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 150MHz
• Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, CapSense, I2S, LCD, LVD, POR, PWM, WDT
• Number of I/O: 102
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 512K x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 128-LQFP
• Supplier Device Package: 128-TQFP (14x20)

Paquete: -

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TD400N26KOFHPSA1

Infineon Technologies

SCR MODULE 2.6KV 800A MODULE

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 2.6 kV
• Current - On State (It (AV)) (Max): 510 A
• Current - On State (It (RMS)) (Max): 800 A
• Voltage - Gate Trigger (Vgt) (Max): 2.2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

Paquete: -

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S25HL512TFANHV010

Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 8WSON

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 512Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-WSON (6x8)

Paquete: -

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