Infineon Technologies Productos

IKQ120N60TAXKSA1

Infineon Technologies

IGBT 600V TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 160A
• Current - Collector Pulsed (Icm): 480A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
• Power - Max: 833W
• Switching Energy: 4.1mJ (on), 2.8mJ (off)
• Input Type: Standard
• Gate Charge: 772nC
• Td (on/off) @ 25°C: 33ns/310ns
• Test Condition: 400V, 120A, 3 Ohm, 15V
• Reverse Recovery Time (trr): 280ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-46

Paquete: TO-247-3

IKW50N65F5AXKSA1

Infineon Technologies

IGBT 650V 80A 305W PG-TO247-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
• Power - Max: 270W
• Switching Energy: 490µJ (on), 140µJ (off)
• Input Type: Standard
• Gate Charge: 108nC
• Td (on/off) @ 25°C: 21ns/156ns
• Test Condition: 400V, 25A, 12 Ohm, 15V
• Reverse Recovery Time (trr): 77ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

Paquete: TO-247-3

IPI80N06S4L07AKSA1

Infineon Technologies

MOSFET N-CH 60V 80A TO262-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 40µA
• Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA

IRF7420PBF

Infineon Technologies

MOSFET P-CH 12V 11.5A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 3529pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paquete: 8-SOIC (0.154", 3.90mm Width)

IRFR3711ZTRR

Infineon Technologies

MOSFET N-CH 20V 93A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.45V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

IRL5602STRL

Infineon Technologies

MOSFET P-CH 20V 24A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 75W (Tc)
• Rds On (Max) @ Id, Vgs: 42 mOhm @ 12A, 4.5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFR6215TRRPBF

Infineon Technologies

MOSFET P-CH 150V 13A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

BSP296NH6433XTMA1

Infineon Technologies

MOSFET N-CH 100V 1.1A SOT-223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 152.7pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

Paquete: TO-261-4, TO-261AA

IPP60R190E6

Infineon Technologies

MOSFET N-CH 600V 20.2A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 630µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 151W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

Paquete: TO-220-3

IRFSL3006PBF

Infineon Technologies

MOSFET N-CH 60V 195A TO262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8970pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 170A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA

IRF540ZLPBF

Infineon Technologies

MOSFET N-CH 100V 36A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 92W (Tc)
• Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFR120ZPBF

Infineon Technologies

MOSFET N-CH 100V 8.7A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.2A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF7902PBF

Infineon Technologies

MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A
• Rds On (Max) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
• Power - Max: 1.4W, 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

IRF7343TRPBF

Infineon Technologies

MOSFET N/P-CH 55V 8-SOIC

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

BC 818K-25 E6327

Infineon Technologies

TRANS NPN 25V 0.5A SOT-23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 25V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 500mW
• Frequency - Transition: 170MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

Paquete: TO-236-3, SC-59, SOT-23-3

BAS1602WH6327XTSA1

Infineon Technologies

DIODE GEN PURP 80V 200MA SCD80-2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-80
• Supplier Device Package: PG-SCD80-2
• Operating Temperature - Junction: 150°C (Max)

Paquete: SC-80

BAS4007WH6327XTSA1

Infineon Technologies

DIODE ARRAY SCHOTTKY 40V SOT323

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 120mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 100ps
• Current - Reverse Leakage @ Vr: 1µA @ 30V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

Paquete: SC-70, SOT-323

BTS5240LNT

Infineon Technologies

IC HIGH SIDE PWR SWITCH PDSO-12

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 4.5 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 5.5A
• Rds On (Typ): 21 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-12-2

Paquete: 12-BSOP (0.295", 7.50mm Width) Exposed Pad

BTS452TT

Infineon Technologies

IC PWR SWITCH 60V HISIDE DPAK-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 6 V ~ 52 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.8A
• Rds On (Typ): 150 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
• Supplier Device Package: PG-TO252-5

Paquete: TO-252-5, DPak (4 Leads + Tab), TO-252AD

IR2127SPBF

Infineon Technologies

IC MOSFET DRVR CURR SENSE 8SOIC

• Driven Configuration: High-Side or Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 12 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 3V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 40ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Paquete: 8-SOIC (0.154", 3.90mm Width)

2EDL05I06PJXUMA1

Infineon Technologies

IC GATE DVR BRDG 60V .25A DSO14

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: N-Channel, P-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 1.1V, 1.7V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 48ns, 24ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-14

Paquete: 14-SOIC (0.154", 3.90mm Width)

ICE3B1565J

Infineon Technologies

IC OFFLINE CTRLR SMPS OTP 8DIP

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 650V
• Topology: Flyback
• Voltage - Start Up: 18V
• Voltage - Supply (Vcc/Vdd): 10.3 V ~ 26 V
• Duty Cycle: 75%
• Frequency - Switching: 67kHz
• Power (Watts): 42W
• Fault Protection: Current Limiting, Open Circuit, Over Load, Over Temperature, Over Voltage
• Control Features: Soft Start
• Operating Temperature: -25°C ~ 130°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: PG-DIP-8
• Mounting Type: Through Hole

Paquete: 8-DIP (0.300", 7.62mm)

XMC1100T016F0032AAXUMA1

Infineon Technologies

IC MCU 32BIT 32KB FLASH 16TSSOP

• Core Processor: ARM? Cortex?-M0
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: I2C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
• Number of I/O: 11
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 6x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: PG-TSSOP-16-8

Paquete: 16-TSSOP (0.173", 4.40mm Width)

TLE9877QXA20XUMA2

Infineon Technologies

IC SOC MOTOR DRIVER 48VQFN

• Applications: Automotive
• Core Processor: ARM? Cortex?-M3
• Program Memory Type: FLASH (64 kB)
• Controller Series: -
• RAM Size: 6K x 8
• Interface: LIN, SSI, UART
• Number of I/O: 10
• Voltage - Supply: 5.5 V ~ 28 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

ESD221U102ELE6327XTMA1

Infineon Technologies

TVS DIODE 5.3VWM 11VC TSLP2

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5.3V (Max)
• Voltage - Breakdown (Min): 5.7V
• Voltage - Clamping (Max) @ Ipp: 11V
• Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
• Power - Peak Pulse: 60W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 38pF @ 1MHz
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: TSLP-2-19

Paquete: SOD-882

TLE49645MXTSA1

Infineon Technologies

MAGNETIC SWITCH UNIPOLAR SOT23-3

• Function: Unipolar Switch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 10.4mT Trip, 2.7mT Release
• Test Condition: 25°C
• Voltage - Supply: 3 V ~ 32 V
• Current - Supply (Max): 2.5mA
• Current - Output (Max): 25mA
• Output Type: Open Drain
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 170°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3-15

Paquete: TO-236-3, SC-59, SOT-23-3

PVT412S-T

Infineon Technologies

IC RELAY PHOTOVO 400V 140MA 6SMD

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 27 Ohm
• Load Current: 140mA
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 400 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 6-SMD (0.300", 7.62mm)
• Supplier Device Package: 6-SMT
• Relay Type: Relay

Paquete: 6-SMD (0.300", 7.62mm)

PVT422PBF

Infineon Technologies

IC RELAY PHOTOVO 400V 120MA 8DIP

• Circuit: DPST (2 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 35 Ohm
• Load Current: 120mA
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 400 V
• Mounting Type: Through Hole
• Termination Style: PC Pin
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP
• Relay Type: Relay

Paquete: 8-DIP (0.300", 7.62mm)

IR3536MMT02TRP

Infineon Technologies

IC REGULATOR PG-VQFN-48-901

• Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-VQFN (7x7)

Paquete: 48-VFQFN Exposed Pad

TLS835B2ELVXUMA1

Infineon Technologies

LINEAR VOLTAGE REGULATOR

• Output Configuration: Positive
• Output Type: Programmable
• Number of Regulators: 1
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 1.5V
• Voltage - Output (Max): 6V
• Voltage Dropout (Max): 0.50V @ 250mA
• Current - Output: 350mA
• Current - Quiescent (Iq): 25µA
• Current - Supply (Max): -
• PSRR: 65dB (100Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-SSOP-14-5

Paquete: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad