Página 13 - Microsemi Corporation Productos - Diodos - Rectificadores
- Arreglos | Heisener Electronics
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Microsemi Corporation Productos - Diodos - Rectificadores
- Arreglos

Registros 465
Página  13/16
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
MSCD200-18
Microsemi Corporation

DIODE MODULE 1.8KV 200A D2

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 1800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D2
  • Supplier Device Package: -
Paquete: D2
En existencias5.136
Standard
1800V
200A
1.3V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 1800V
-
Chassis Mount
D2
-
MSCD165-18
Microsemi Corporation

DIODE MODULE 1.8KV 165A D2

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io) (per Diode): 165A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 1800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D2
  • Supplier Device Package: -
Paquete: D2
En existencias3.312
Standard
1800V
165A
1.4V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 1800V
-
Chassis Mount
D2
-
MSCD120-18
Microsemi Corporation

DIODE MODULE 1.8KV 120A D1

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io) (per Diode): 120A
  • Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6mA @ 1800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
Paquete: D1
En existencias4.592
Standard
1800V
120A
1.43V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
6mA @ 1800V
-
Chassis Mount
D1
D1
MSCD100-18
Microsemi Corporation

DIODE MODULE 1.8KV 100A D1

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 1800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
Paquete: D1
En existencias7.904
Standard
1800V
100A
1.35V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
5mA @ 1800V
-
Chassis Mount
D1
D1
MSAD70-18
Microsemi Corporation

DIODE MODULE 1.8KV 70A D1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io) (per Diode): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.48V @ 200A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 1800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
Paquete: D1
En existencias6.848
Standard
1800V
70A
1.48V @ 200A
Standard Recovery >500ns, > 200mA (Io)
-
5mA @ 1800V
-
Chassis Mount
D1
D1
MSAD70-12
Microsemi Corporation

DIODE MODULE 1.2KV 70A D1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.48V @ 200A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
Paquete: D1
En existencias3.360
Standard
1200V
70A
1.48V @ 200A
Standard Recovery >500ns, > 200mA (Io)
-
5mA @ 1200V
-
Chassis Mount
D1
D1
MSAD70-08
Microsemi Corporation

DIODE MODULE 800V 70A D1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io) (per Diode): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.48V @ 200A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
Paquete: D1
En existencias4.832
Standard
800V
70A
1.48V @ 200A
Standard Recovery >500ns, > 200mA (Io)
-
5mA @ 800V
-
Chassis Mount
D1
D1
MSAD60-18
Microsemi Corporation

DIODE MODULE 1.8KV 60A D1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 1800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
Paquete: D1
En existencias5.872
Standard
1800V
60A
1.3V @ 200A
Standard Recovery >500ns, > 200mA (Io)
-
5mA @ 1800V
-
Chassis Mount
D1
D1
MSAD60-16
Microsemi Corporation

DIODE MODULE 1.6KV 60A D1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 1600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
Paquete: D1
En existencias7.104
Standard
1600V
60A
1.3V @ 200A
Standard Recovery >500ns, > 200mA (Io)
-
5mA @ 1600V
-
Chassis Mount
D1
D1
MSAD60-08
Microsemi Corporation

DIODE MODULE 800V 60A D1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
Paquete: D1
En existencias4.512
Standard
800V
60A
1.3V @ 200A
Standard Recovery >500ns, > 200mA (Io)
-
5mA @ 800V
-
Chassis Mount
D1
D1
MSAD36-18
Microsemi Corporation

DIODE MODULE 1.8KV 36A D1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io) (per Diode): 36A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 1800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
Paquete: D1
En existencias4.336
Standard
1800V
36A
1.25V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
5mA @ 1800V
-
Chassis Mount
D1
D1
MSAD36-16
Microsemi Corporation

DIODE MODULE 1.6KV 36A D1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io) (per Diode): 36A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 1600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
Paquete: D1
En existencias6.560
Standard
1600V
36A
1.25V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
5mA @ 1600V
-
Chassis Mount
D1
D1
MSAD36-12
Microsemi Corporation

DIODE MODULE 1.2KV 36A D1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 36A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
Paquete: D1
En existencias3.712
Standard
1200V
36A
1.25V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
5mA @ 1200V
-
Chassis Mount
D1
D1
MSAD36-08
Microsemi Corporation

DIODE MODULE 800V 36A D1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io) (per Diode): 36A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
Paquete: D1
En existencias7.504
Standard
800V
36A
1.25V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
5mA @ 800V
-
Chassis Mount
D1
D1
MSAD200-18
Microsemi Corporation

DIODE MODULE 1.8KV 200A D2

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 1800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D2
  • Supplier Device Package: -
Paquete: D2
En existencias4.224
Standard
1800V
200A
1.3V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 1800V
-
Chassis Mount
D2
-
MSAD200-12
Microsemi Corporation

DIODE MODULE 1.2KV 200A D2

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D2
  • Supplier Device Package: -
Paquete: D2
En existencias4.608
Standard
1200V
200A
1.3V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 1200V
-
Chassis Mount
D2
-
MSAD200-08
Microsemi Corporation

DIODE MODULE 800V 200A D2

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D2
  • Supplier Device Package: -
Paquete: D2
En existencias5.280
Standard
800V
200A
1.3V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 800V
-
Chassis Mount
D2
-
MSAD165-12
Microsemi Corporation

DIODE MODULE 1.2KV 165A D2

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 165A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D2
  • Supplier Device Package: -
Paquete: D2
En existencias5.760
Standard
1200V
165A
1.4V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 1200V
-
Chassis Mount
D2
-
MSAD165-08
Microsemi Corporation

DIODE MODULE 800V 165A D2

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io) (per Diode): 165A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D2
  • Supplier Device Package: -
Paquete: D2
En existencias5.728
Standard
800V
165A
1.4V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 800V
-
Chassis Mount
D2
-
MSAD120-18
Microsemi Corporation

DIODE MODULE 1.8KV 120A D1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io) (per Diode): 120A
  • Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6mA @ 1800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
Paquete: D1
En existencias3.584
Standard
1800V
120A
1.43V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
6mA @ 1800V
-
Chassis Mount
D1
D1
hot MSAD120-12
Microsemi Corporation

DIODE MODULE 1.2KV 120A D1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 120A
  • Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
Paquete: D1
En existencias4.544
Standard
1200V
120A
1.43V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
6mA @ 1200V
-
Chassis Mount
D1
D1
MSAD120-08
Microsemi Corporation

DIODE MODULE 800V 120A D1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io) (per Diode): 120A
  • Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 6mA @ 800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
Paquete: D1
En existencias3.312
Standard
800V
120A
1.43V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
6mA @ 800V
-
Chassis Mount
D1
D1
MSAD100-18
Microsemi Corporation

DIODE MODULE 1.8KV 100A D1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 1800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
Paquete: D1
En existencias6.896
Standard
1800V
100A
1.35V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
5mA @ 1800V
-
Chassis Mount
D1
D1
MSAD100-12
Microsemi Corporation

DIODE MODULE 1.2KV 100A D1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
Paquete: D1
En existencias7.456
Standard
1200V
100A
1.35V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
5mA @ 1200V
-
Chassis Mount
D1
D1
MSAD100-08
Microsemi Corporation

DIODE MODULE 800V 100A D1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
Paquete: D1
En existencias3.568
Standard
800V
100A
1.35V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
5mA @ 800V
-
Chassis Mount
D1
D1
FST8145D
Microsemi Corporation

DIODE MODULE 45V

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 530mV @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 45V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
Paquete: Module
En existencias3.648
Schottky
45V
40A
530mV @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 45V
-
Chassis Mount
Module
Module
FST8145A
Microsemi Corporation

DIODE MODULE 45V

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 530mV @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 45V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
Paquete: Module
En existencias7.648
Schottky
45V
40A
530mV @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 45V
-
Chassis Mount
Module
Module
FST80100D
Microsemi Corporation

DIODE MODULE 100V TO249

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 820mV @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 100V
  • Operating Temperature - Junction: -
  • Mounting Type: Screw Mount
  • Package / Case: TO-249AA
  • Supplier Device Package: TO-249
Paquete: TO-249AA
En existencias4.528
Schottky
100V
40A
820mV @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 100V
-
Screw Mount
TO-249AA
TO-249
FST80100A
Microsemi Corporation

DIODE MODULE 100V TO249

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 820mV @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 100V
  • Operating Temperature - Junction: -
  • Mounting Type: Screw Mount
  • Package / Case: TO-249AA
  • Supplier Device Package: TO-249
Paquete: TO-249AA
En existencias5.200
Schottky
100V
40A
820mV @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 100V
-
Screw Mount
TO-249AA
TO-249
FST60100D
Microsemi Corporation

DIODE MODULE 100V TO249

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 860mV @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 100V
  • Operating Temperature - Junction: -
  • Mounting Type: Screw Mount
  • Package / Case: TO-249AA
  • Supplier Device Package: TO-249
Paquete: TO-249AA
En existencias6.816
Schottky
100V
60A
860mV @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 100V
-
Screw Mount
TO-249AA
TO-249