Microsemi Corporation Productos - Diodos - Rectificadores
- Simple | Heisener Electronics
Contáctenos
SalesDept@heisener.com +86-755-83210559-834
Iniciar sesión/Registrar
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carro 0

Microsemi Corporation Productos - Diodos - Rectificadores
- Simple

Registros 1.629
Página  1/55
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
JANTX1N914UR
Microsemi Corporation

DIODE GEN PURP 75V 200MA DO213AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 500nA @ 75V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-213AA
En existencias5.392
75V
200mA
1.2V @ 50mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 75V
4pF @ 0V, 1MHz
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
1N5619
Microsemi Corporation

DIODE GEN PURP 600V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 500nA @ 600V
  • Capacitance @ Vr, F: 25pF @ 12V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: A, Axial
En existencias6.696
600V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
500nA @ 600V
25pF @ 12V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
APT75DQ120BG
Microsemi Corporation

DIODE GEN PURP 1.2KV 75A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 75A
  • Voltage - Forward (Vf) (Max) @ If: 3.1V @ 75A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 325ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247 [B]
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-247-2
En existencias29.532
1200V
75A
3.1V @ 75A
Fast Recovery =< 500ns, > 200mA (Io)
325ns
100µA @ 1200V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
1N5620
Microsemi Corporation

DIODE GEN PURP 800V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 500nA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 200°C
Paquete: A, Axial
En existencias19.440
800V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 800V
-
Through Hole
A, Axial
-
-65°C ~ 200°C
hot APT30D100BG
Microsemi Corporation

DIODE GEN PURP 1KV 30A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.3V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 290ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-247-2
En existencias87.180
1000V
30A
2.3V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
290ns
250µA @ 1000V
-
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
1N649-1
Microsemi Corporation

DIODE GEN PURP 600V 400MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 400mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50nA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-204AH, DO-35, Axial
En existencias6.588
600V
400mA
1V @ 400mA
Standard Recovery >500ns, > 200mA (Io)
-
50nA @ 600V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
APT30S20BG
Microsemi Corporation

DIODE SCHOTTKY 200V 45A TO247

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 45A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 500µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247 [B]
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-247-2
En existencias14.190
200V
45A
850mV @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
500µA @ 200V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 150°C
1N4148-1
Microsemi Corporation

DIODE GEN PURP 75V 200MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 500nA @ 75V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-204AH, DO-35, Axial
En existencias13.956
75V
200mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
20ns
500nA @ 75V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
UPS5100E3/TR13
Microsemi Corporation

DIODE SCHOTTKY 100V 5A POWERMITE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 810mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 100V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Powermite?3
  • Supplier Device Package: Powermite 3
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: Powermite?3
En existencias50.052
100V
5A
810mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
150pF @ 4V, 1MHz
Surface Mount
Powermite?3
Powermite 3
-55°C ~ 125°C
UPS3100E3/TR13
Microsemi Corporation

DIODE SCHOTTKY 100V 3A POWERMITE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 760mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 100V
  • Capacitance @ Vr, F: 85pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Powermite?3
  • Supplier Device Package: Powermite 3
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: Powermite?3
En existencias90.036
100V
3A
760mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
85pF @ 4V, 1MHz
Surface Mount
Powermite?3
Powermite 3
-55°C ~ 125°C
UPS140E3/TR7
Microsemi Corporation

DIODE SCHOTTKY 40V 1A POWERMITE1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 40V
  • Capacitance @ Vr, F: 70pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: Powermite 1 (DO216-AA)
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: DO-216AA
En existencias26.808
40V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
70pF @ 5V, 1MHz
Surface Mount
DO-216AA
Powermite 1 (DO216-AA)
-55°C ~ 125°C
hot UPS120EE3/TR7
Microsemi Corporation

DIODE SCHOTTKY 20V 1A POWERMITE1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: Powermite 1 (DO216-AA)
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: DO-216AA
En existencias43.308
20V
1A
530mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 20V
-
Surface Mount
DO-216AA
Powermite 1 (DO216-AA)
-55°C ~ 125°C
1N5822US
Microsemi Corporation

DIODE SCHOTTKY 40V 3A B-MELF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 125°C
Paquete: SQ-MELF, B
En existencias7.008
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100mA @ 40V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 125°C
JANTX1N5806US
Microsemi Corporation

DIODE GEN PURP 150V 1A D5A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 1µA @ 150V
  • Capacitance @ Vr, F: 25pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: SQ-MELF, A
En existencias15.972
150V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 150V
25pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
JAN1N5819UR-1
Microsemi Corporation

DIODE SCHOTTKY 45V 1A DO213AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 490mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 45V
  • Capacitance @ Vr, F: 70pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 125°C
Paquete: DO-213AB, MELF
En existencias8.208
45V
1A
490mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 45V
70pF @ 5V, 1MHz
Surface Mount
DO-213AB, MELF
DO-213AB
-65°C ~ 125°C
hot 1N5811US
Microsemi Corporation

DIODE GEN PURP 150V 3A B-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 60pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: SQ-MELF, B
En existencias14.472
150V
3A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 50V
60pF @ 10V, 1MHz
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
APT10SCD120B
Microsemi Corporation

DIODE SCHOTTKY 1.2KV 36A TO247

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 36A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 1200V
  • Capacitance @ Vr, F: 600pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-247-2
En existencias16.656
1200V
36A (DC)
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
200µA @ 1200V
600pF @ 0V, 1MHz
Through Hole
TO-247-2
TO-247
-55°C ~ 150°C
1N6642US
Microsemi Corporation

DIODE GEN PURP 75V 300MA D5D

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 500nA @ 75V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, D
  • Supplier Device Package: D-5D
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: SQ-MELF, D
En existencias8.088
75V
300mA
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
5ns
500nA @ 75V
5pF @ 0V, 1MHz
Surface Mount
SQ-MELF, D
D-5D
-65°C ~ 175°C
hot APT100S20BG
Microsemi Corporation

DIODE SCHOTTKY 200V 120A TO247

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70ns
  • Current - Reverse Leakage @ Vr: 2mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247 [B]
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: TO-247-2
En existencias5.760
200V
120A
950mV @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
70ns
2mA @ 200V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 150°C
hot JAN1N5617
Microsemi Corporation

DIODE GEN PURP 400V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 500nA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: A, Axial
En existencias17.544
400V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
500nA @ 400V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
hot APT30D60BG
Microsemi Corporation

DIODE GEN PURP 600V 30A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85ns
  • Current - Reverse Leakage @ Vr: 250µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247 [B]
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-247-2
En existencias6.096
600V
30A
1.8V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
85ns
250µA @ 600V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
hot APT40DQ60BG
Microsemi Corporation

DIODE GEN PURP 600V 40A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 2.4V @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247 [B]
  • Operating Temperature - Junction: -55°C ~ 175°C
Paquete: TO-247-2
En existencias4.896
600V
40A
2.4V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
25µA @ 600V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
1N647-1
Microsemi Corporation

DIODE GEN PURP 400V 400MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 400mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50nA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-204AH, DO-35, Axial
En existencias59.532
400V
400mA
1V @ 400mA
Standard Recovery >500ns, > 200mA (Io)
-
50nA @ 400V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
1N4148UR-1
Microsemi Corporation

DIODE GEN PURP 75V 200MA DO213AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 500nA @ 75V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA
  • Operating Temperature - Junction: -65°C ~ 175°C
Paquete: DO-213AA (Glass)
En existencias30.492
75V
200mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
20ns
500nA @ 75V
-
Surface Mount
DO-213AA (Glass)
DO-213AA
-65°C ~ 175°C
UPR60E3/TR7
Microsemi Corporation

DIODE GEN PURP 600V 2A POWERMITE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: Powermite
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-216AA
En existencias57.234
600V
2A
1.6V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1µA @ 600V
-
Surface Mount
DO-216AA
Powermite
-55°C ~ 150°C
hot UPS840E3/TR13
Microsemi Corporation

DIODE SCHOTTKY 40V 8A POWERMITE3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Powermite?3
  • Supplier Device Package: Powermite 3
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: Powermite?3
En existencias72.336
40V
8A
450mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
5mA @ 40V
-
Surface Mount
Powermite?3
Powermite 3
-55°C ~ 125°C
hot LSM115JE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 15V 1A DO214BA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 220mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 15V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214BA
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-214AA, SMB
En existencias24.000
15V
1A
220mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
10mA @ 15V
-
Surface Mount
DO-214AA, SMB
DO-214BA
-55°C ~ 150°C
UPS5819E3TR7
Microsemi Corporation

DIODE SCHOTTKY 40V 1A POWERMITE1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: 60pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: Powermite 1 (DO216-AA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-216AA
En existencias617.352
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
60pF @ 5V, 1MHz
Surface Mount
DO-216AA
Powermite 1 (DO216-AA)
-55°C ~ 150°C
hot UPS5817E3/TR7
Microsemi Corporation

DIODE SCHOTTKY 20V 1A POWERMITE1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: Powermite 1 (DO216-AA)
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: DO-216AA
En existencias81.528
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
-
Surface Mount
DO-216AA
Powermite 1 (DO216-AA)
-55°C ~ 150°C
hot UPS120E3/TR7
Microsemi Corporation

DIODE SCHOTTKY 20V 1A POWERMITE1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: Powermite 1 (DO216-AA)
  • Operating Temperature - Junction: -55°C ~ 125°C
Paquete: DO-216AA
En existencias710.040
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 20V
-
Surface Mount
DO-216AA
Powermite 1 (DO216-AA)
-55°C ~ 125°C