Página 3 - Microsemi Corporation Productos - Diodos - Rectificadores - Simple

Nº de pieza	Fabricantes	Descripción	Paquete	En existencias	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N5618	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 200°C	Paquete: A, Axial	En existencias8.124	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
1N5616	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 200°C	Paquete: A, Axial	En existencias5.392	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
1N5614	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 200°C	Paquete: A, Axial	En existencias12.024	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
1N4938-1	Microsemi Corporation	DIODE GEN PURP 175V 100MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 175V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 175V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	Paquete: DO-204AH, DO-35, Axial	En existencias7.272	175V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 175V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
1N4454UR-1	Microsemi Corporation	DIODE GEN PURP 50V 200MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -55°C ~ 175°C	Paquete: DO-213AA	En existencias6.912	50V	200mA (DC)	1V @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	-	Surface Mount	DO-213AA	DO-213AA	-55°C ~ 175°C
APT30DQ100BG	Microsemi Corporation	DIODE GEN PURP 1KV 30A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 3V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 295ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C	Paquete: TO-247-2	En existencias5.728	1000V	30A	3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	295ns	100µA @ 1000V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
JANTXV1N5617	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 500nA @ 400V Capacitance @ Vr, F: 35pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Paquete: A, Axial	En existencias7.212	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	35pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N6640	Microsemi Corporation	DIODE GEN PURP 50V 300MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: D, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Paquete: D, Axial	En existencias7.032	50V	300mA	1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	-	Through Hole	D, Axial	-	-65°C ~ 175°C
JANTXV1N5620	Microsemi Corporation	DIODE GENERAL PURPOSE 800V 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 200°C	Paquete: A, Axial	En existencias6.112	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
1N5416US	Microsemi Corporation	DIODE GEN PURP 100V 3A D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: E-MELF Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	Paquete: E-MELF	En existencias7.800	100V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 100V	-	Surface Mount	E-MELF	D-5B	-65°C ~ 175°C
JANTX1N4942	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	Paquete: A, Axial	En existencias6.396	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
JANTX1N6638	Microsemi Corporation	DIODE GEN PURP 125V 300MA D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 125V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: D, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Paquete: D, Axial	En existencias13.050	125V	300mA	1.1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 125V	-	Through Hole	D, Axial	-	-65°C ~ 175°C
APT10SCD120K	Microsemi Corporation	DIODE SCHOTTKY 1.2KV 10A TO220 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220 Operating Temperature - Junction: -	Paquete: TO-220-2	En existencias6.256	1200V	10A	1.5V @ 10A	No Recovery Time > 500mA (Io)	0ns	-	-	Through Hole	TO-220-2	TO-220	-
JAN1N3613	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Paquete: A, Axial	En existencias6.132	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 300V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JAN1N5550	Microsemi Corporation	DIODE GEN PURP 200V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Paquete: B, Axial	En existencias6.112	200V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 200V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JAN1N5620	Microsemi Corporation	DIODE GEN PURP 800V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 200°C	Paquete: A, Axial	En existencias7.560	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
1N6643US	Microsemi Corporation	DIODE GEN PURP 50V 300MA D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 50nA @ 50V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	Paquete: SQ-MELF, B	En existencias10.260	50V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	50nA @ 50V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
APT20SCD65K	Microsemi Corporation	DIODE SILICON 650V 32A TO220 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 32A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 400µA @ 650V Capacitance @ Vr, F: 680pF @ 100mV, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220 [K] Operating Temperature - Junction: -55°C ~ 150°C	Paquete: TO-220-2	En existencias7.200	650V	32A	1.8V @ 20A	No Recovery Time > 500mA (Io)	0ns	400µA @ 650V	680pF @ 100mV, 1MHz	Through Hole	TO-220-2	TO-220 [K]	-55°C ~ 150°C
1N5616US	Microsemi Corporation	DIODE GEN PURP 400V 1A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C	Paquete: SQ-MELF, A	En existencias7.824	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 400V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
APT10SCD65K	Microsemi Corporation	DIODE SILICON 650V 17A TO220 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 17A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 650V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220 [K] Operating Temperature - Junction: -55°C ~ 150°C	Paquete: TO-220-2	En existencias7.120	650V	17A	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	300pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220 [K]	-55°C ~ 150°C
JANTXV1N4150-1	Microsemi Corporation	DIODE GEN PURP 50V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	Paquete: DO-204AH, DO-35, Axial	En existencias9.552	50V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
APT30D30BG	Microsemi Corporation	DIODE GEN PURP 300V 30A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 250µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 [B] Operating Temperature - Junction: -55°C ~ 175°C	Paquete: TO-247-2	En existencias6.080	300V	30A	1.4V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	250µA @ 300V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
APT30DQ120KG	Microsemi Corporation	DIODE GEN PURP 1.2KV 30A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 3.3V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 320ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 [K] Operating Temperature - Junction: -55°C ~ 175°C	Paquete: TO-220-3	En existencias6.064	1200V	30A	3.3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	320ns	100µA @ 1200V	-	Through Hole	TO-220-3	TO-220 [K]	-55°C ~ 175°C
JANTX1N6843CCU3	Microsemi Corporation	DIODE SCHOTTKY 100V 15A SMD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.27V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 275pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: SMD Operating Temperature - Junction: -65°C ~ 150°C	Paquete: 3-SMD, Flat Leads	En existencias6.512	100V	15A	1.27V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 100V	275pF @ 5V, 1MHz	Surface Mount	3-SMD, Flat Leads	SMD	-65°C ~ 150°C
JANS1N5615	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: 45pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Paquete: A, Axial	En existencias7.560	200V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 200V	45pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N3644	Microsemi Corporation	DIODE STD REC 1500V S-PKG Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: S, Axial Supplier Device Package: S, Axial Operating Temperature - Junction: -65°C ~ 175°C	Paquete: S, Axial	En existencias7.884	1500V	250mA	5V @ 250mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 1500V	-	Through Hole	S, Axial	S, Axial	-65°C ~ 175°C
JANTXV1N5418	Microsemi Corporation	DIODE GEN PURP 400V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Paquete: B, Axial	En existencias6.348	400V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTX1N3957	Microsemi Corporation	DIODE STD REC 1000V 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Paquete: A, Axial	En existencias5.840	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N5616US	Microsemi Corporation	DIODE GEN PURP 400V 1A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C	Paquete: SQ-MELF, A	En existencias6.800	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 400V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
JAN1N5420	Microsemi Corporation	DIODE GEN PURP 600V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Paquete: B, Axial	En existencias7.860	600V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	1µA @ 600V	-	Through Hole	B, Axial	-	-65°C ~ 175°C

1N5618

Microsemi Corporation

DIODE GEN PURP 600V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 200°C

Paquete: A, Axial

En existencias8.124

600V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 600V

-

Through Hole

A, Axial

-

-65°C ~ 200°C

1N5616

Microsemi Corporation

DIODE GEN PURP 400V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 200°C

Paquete: A, Axial

En existencias5.392

400V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 400V

-

Through Hole

A, Axial

-

-65°C ~ 200°C

1N5614

Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 200°C

Paquete: A, Axial

En existencias12.024

200V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 200V

-

Through Hole

A, Axial

-

-65°C ~ 200°C

1N4938-1

Microsemi Corporation

DIODE GEN PURP 175V 100MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 175V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 175V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-204AH, DO-35, Axial

En existencias7.272

175V

100mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

50ns

100nA @ 175V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

1N4454UR-1

Microsemi Corporation

DIODE GEN PURP 50V 200MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -55°C ~ 175°C

Paquete: DO-213AA

En existencias6.912

50V

200mA (DC)

1V @ 10mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

100nA @ 50V

-

Surface Mount

DO-213AA

-55°C ~ 175°C

APT30DQ100BG

Microsemi Corporation

DIODE GEN PURP 1KV 30A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 3V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 295ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-247-2

En existencias5.728

1000V

30A

3V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

295ns

100µA @ 1000V

-

Through Hole

TO-247-2

TO-247 [B]

-55°C ~ 175°C

JANTXV1N5617

Microsemi Corporation

DIODE GEN PURP 400V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: A, Axial

En existencias7.212

400V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

500nA @ 400V

35pF @ 12V, 1MHz

Through Hole

A, Axial

-

-65°C ~ 175°C

JANTX1N6640

Microsemi Corporation

DIODE GEN PURP 50V 300MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: D, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: D, Axial

En existencias7.032

50V

300mA

1V @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

100nA @ 50V

-

Through Hole

D, Axial

-

-65°C ~ 175°C

JANTXV1N5620

Microsemi Corporation

DIODE GENERAL PURPOSE 800V 1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 200°C

Paquete: A, Axial

En existencias6.112

800V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 800V

-

Through Hole

A, Axial

-

-65°C ~ 200°C

1N5416US

Microsemi Corporation

DIODE GEN PURP 100V 3A D5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: E-MELF
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: E-MELF

En existencias7.800

100V

3A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

1µA @ 100V

-

Surface Mount

E-MELF

D-5B

-65°C ~ 175°C

JANTX1N4942

Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: A, Axial

En existencias6.396

200V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

1µA @ 200V

-

Through Hole

A, Axial

-65°C ~ 175°C

JANTX1N6638

Microsemi Corporation

DIODE GEN PURP 125V 300MA D5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 500nA @ 125V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: D, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: D, Axial

En existencias13.050

125V

300mA

1.1V @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

20ns

500nA @ 125V

-

Through Hole

D, Axial

-

-65°C ~ 175°C

APT10SCD120K

Microsemi Corporation

DIODE SCHOTTKY 1.2KV 10A TO220

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220
Operating Temperature - Junction: -

Paquete: TO-220-2

En existencias6.256

1200V

10A

1.5V @ 10A

No Recovery Time > 500mA (Io)

0ns

-

Through Hole

TO-220-2

TO-220

-

JAN1N3613

Microsemi Corporation

DIODE GEN PURP 600V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: A, Axial

En existencias6.132

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

100µA @ 300V

-

Through Hole

A, Axial

-

-65°C ~ 175°C

JAN1N5550

Microsemi Corporation

DIODE GEN PURP 200V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: B, Axial

En existencias6.112

200V

3A

1.2V @ 9A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 200V

-

Through Hole

B, Axial

-

-65°C ~ 175°C

JAN1N5620

Microsemi Corporation

DIODE GEN PURP 800V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 200°C

Paquete: A, Axial

En existencias7.560

800V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 800V

-

Through Hole

A, Axial

-

-65°C ~ 200°C

1N6643US

Microsemi Corporation

DIODE GEN PURP 50V 300MA D5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: SQ-MELF, B

En existencias10.260

50V

300mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

20ns

50nA @ 50V

5pF @ 0V, 1MHz

Surface Mount

SQ-MELF, B

D-5B

-65°C ~ 175°C

APT20SCD65K

Microsemi Corporation

DIODE SILICON 650V 32A TO220

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 32A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 400µA @ 650V
Capacitance @ Vr, F: 680pF @ 100mV, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: TO-220-2

En existencias7.200

650V

32A

1.8V @ 20A

No Recovery Time > 500mA (Io)

0ns

400µA @ 650V

680pF @ 100mV, 1MHz

Through Hole

TO-220-2

TO-220 [K]

-55°C ~ 150°C

1N5616US

Microsemi Corporation

DIODE GEN PURP 400V 1A D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C

Paquete: SQ-MELF, A

En existencias7.824

400V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 400V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 200°C

APT10SCD65K

Microsemi Corporation

DIODE SILICON 650V 17A TO220

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 17A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 650V
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 150°C

Paquete: TO-220-2

En existencias7.120

650V

17A

1.8V @ 10A

No Recovery Time > 500mA (Io)

0ns

200µA @ 650V

300pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220 [K]

-55°C ~ 150°C

JANTXV1N4150-1

Microsemi Corporation

DIODE GEN PURP 50V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-204AH, DO-35, Axial

En existencias9.552

50V

200mA

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

4ns

100nA @ 50V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

APT30D30BG

Microsemi Corporation

DIODE GEN PURP 300V 30A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 250µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-247-2

En existencias6.080

300V

30A

1.4V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

250µA @ 300V

-

Through Hole

TO-247-2

TO-247 [B]

-55°C ~ 175°C

APT30DQ120KG

Microsemi Corporation

DIODE GEN PURP 1.2KV 30A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 3.3V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220 [K]
Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-220-3

En existencias6.064

1200V

30A

3.3V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

320ns

100µA @ 1200V

-

Through Hole

TO-220-3

TO-220 [K]

-55°C ~ 175°C

JANTX1N6843CCU3

Microsemi Corporation

DIODE SCHOTTKY 100V 15A SMD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.27V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 275pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: SMD
Operating Temperature - Junction: -65°C ~ 150°C

Paquete: 3-SMD, Flat Leads

En existencias6.512

100V

15A

1.27V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 100V

275pF @ 5V, 1MHz

Surface Mount

3-SMD, Flat Leads

SMD

-65°C ~ 150°C

JANS1N5615

Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: A, Axial

En existencias7.560

200V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

500nA @ 200V

45pF @ 12V, 1MHz

Through Hole

A, Axial

-

-65°C ~ 175°C

JANTX1N3644

Microsemi Corporation

DIODE STD REC 1500V S-PKG

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: S, Axial
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: S, Axial

En existencias7.884

1500V

250mA

5V @ 250mA

Fast Recovery =< 500ns, > 200mA (Io)

-

5µA @ 1500V

-

Through Hole

S, Axial

-65°C ~ 175°C

JANTXV1N5418

Microsemi Corporation

DIODE GEN PURP 400V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: B, Axial

En existencias6.348

400V

3A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

1µA @ 400V

-

Through Hole

B, Axial

-

-65°C ~ 175°C

JANTX1N3957

Microsemi Corporation

DIODE STD REC 1000V 1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: A, Axial

En existencias5.840

1000V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

1µA @ 1000V

-

Through Hole

A, Axial

-

-65°C ~ 175°C

JANTX1N5616US

Microsemi Corporation

DIODE GEN PURP 400V 1A D5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C

Paquete: SQ-MELF, A

En existencias6.800

400V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 400V

-

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 200°C

JAN1N5420

Microsemi Corporation

DIODE GEN PURP 600V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

Paquete: B, Axial

En existencias7.860

600V

3A

1.5V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

400ns

1µA @ 600V

-

Through Hole

B, Axial

-

-65°C ~ 175°C

Microsemi Corporation Productos - Diodos - Rectificadores - Simple

Microsemi Corporation Productos - Diodos - Rectificadores - Simple