Rohm Semiconductor Productos - Transistores - FET, MOSFET - Simple | Heisener Electronics
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Rohm Semiconductor Productos - Transistores - FET, MOSFET - Simple

Registros 595
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Paquete
En existencias
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot RUM002N02T2L
Rohm Semiconductor

MOSFET N-CH 20V 0.2A VMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 2.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VMT3
  • Package / Case: SOT-723
Paquete: SOT-723
En existencias1.493.088
MOSFET (Metal Oxide)
20V
200mA (Ta)
1.2V, 2.5V
1V @ 1mA
-
25pF @ 10V
±8V
-
150mW (Ta)
1.2 Ohm @ 200mA, 2.5V
150°C (TJ)
Surface Mount
VMT3
SOT-723
hot RV1C001ZPT2L
Rohm Semiconductor

MOSFET P-CH 20V 0.1A VML0806

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VML0806
  • Package / Case: 3-SMD, No Lead
Paquete: 3-SMD, No Lead
En existencias96.000
MOSFET (Metal Oxide)
20V
100mA (Ta)
1.2V, 4.5V
1V @ 100µA
-
15pF @ 10V
±10V
-
100mW (Ta)
3.8 Ohm @ 100mA, 4.5V
150°C (TJ)
Surface Mount
VML0806
3-SMD, No Lead
hot RSC002P03T316
Rohm Semiconductor

MOSFET P-CH 30V 0.25A SST3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 250mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SST3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias456.372
MOSFET (Metal Oxide)
30V
250mA (Ta)
4V, 10V
2.5V @ 1mA
-
30pF @ 10V
±20V
-
200mW (Ta)
1.4 Ohm @ 250mA, 10V
150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
hot RUC002N05T116
Rohm Semiconductor

MOSFET N-CH 50V 0.2A SST3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SST3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias1.218.000
MOSFET (Metal Oxide)
50V
200mA (Ta)
1.2V, 4.5V
1V @ 1mA
-
25pF @ 10V
±8V
-
200mW (Ta)
2.2 Ohm @ 200mA, 4.5V
150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
hot RYE002N05TCL
Rohm Semiconductor

MOSFET N-CH 50V 0.2A EMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: EMT3
  • Package / Case: SC-75, SOT-416
Paquete: SC-75, SOT-416
En existencias2.160.000
MOSFET (Metal Oxide)
50V
200mA (Ta)
0.9V, 4.5V
800mV @ 1mA
-
26pF @ 10V
±8V
-
150mW (Ta)
2.2 Ohm @ 200mA, 4.5V
150°C (TJ)
Surface Mount
EMT3
SC-75, SOT-416
hot RK7002BMT116
Rohm Semiconductor

MOSFET N-CH 60V 0.25A SST3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SST3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias1.684.536
MOSFET (Metal Oxide)
60V
250mA (Ta)
2.5V, 10V
2.3V @ 1mA
-
15pF @ 25V
±20V
-
200mW (Ta)
2.4 Ohm @ 250mA, 10V
150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
SCT3030KLGC11
Rohm Semiconductor

MOSFET NCH 1.2KV 72A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 131nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 2222pF @ 800V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 339W (Tc)
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias15.876
SiCFET (Silicon Carbide)
1200V
72A (Tc)
18V
5.6V @ 13.3mA
131nC @ 18V
2222pF @ 800V
+22V, -4V
-
339W (Tc)
39 mOhm @ 27A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
SCT3022ALGC11
Rohm Semiconductor

MOSFET NCH 650V 93A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 133nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 2208pF @ 500V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 339W (Tc)
  • Rds On (Max) @ Id, Vgs: 28.6 mOhm @ 36A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias14.586
SiCFET (Silicon Carbide)
650V
93A (Tc)
18V
5.6V @ 18.2mA
133nC @ 18V
2208pF @ 500V
+22V, -4V
-
339W (Tc)
28.6 mOhm @ 36A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
SCH2080KEC
Rohm Semiconductor

MOSFET N-CH 1200V 40A TO-247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4V @ 4.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 106nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 800V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 262W (Tc)
  • Rds On (Max) @ Id, Vgs: 117 mOhm @ 10A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias22.500
SiCFET (Silicon Carbide)
1200V
40A (Tc)
18V
4V @ 4.4mA
106nC @ 18V
1850pF @ 800V
+22V, -6V
-
262W (Tc)
117 mOhm @ 10A, 18V
175°C (TJ)
Through Hole
TO-247
TO-247-3
SCT3040KLGC11
Rohm Semiconductor

MOSFET NCH 1.2KV 55A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 107nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 1337pF @ 800V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 262W (Tc)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias16.116
SiCFET (Silicon Carbide)
1200V
55A (Tc)
18V
5.6V @ 10mA
107nC @ 18V
1337pF @ 800V
+22V, -4V
-
262W (Tc)
52 mOhm @ 20A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
SCT3030ALGC11
Rohm Semiconductor

MOSFET NCH 650V 70A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 104nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 1526pF @ 500V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 262W (Tc)
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias24.444
SiCFET (Silicon Carbide)
650V
70A (Tc)
18V
5.6V @ 13.3mA
104nC @ 18V
1526pF @ 500V
+22V, -4V
-
262W (Tc)
39 mOhm @ 27A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
SCT2080KEC
Rohm Semiconductor

MOSFET N-CH 1200V 40A TO-247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4V @ 4.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 106nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 800V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 262W (Tc)
  • Rds On (Max) @ Id, Vgs: 117 mOhm @ 10A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias26.964
SiCFET (Silicon Carbide)
1200V
40A (Tc)
18V
4V @ 4.4mA
106nC @ 18V
2080pF @ 800V
+22V, -6V
-
262W (Tc)
117 mOhm @ 10A, 18V
175°C (TJ)
Through Hole
TO-247
TO-247-3
SCT3060ALGC11
Rohm Semiconductor

MOSFET NCH 650V 39A TO247N

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 852pF @ 500V
  • Vgs (Max): +22V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 165W (Tc)
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 13A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias13.860
SiCFET (Silicon Carbide)
650V
39A (Tc)
18V
5.6V @ 6.67mA
58nC @ 18V
852pF @ 500V
+22V, -4V
-
165W (Tc)
78 mOhm @ 13A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
SCT2120AFC
Rohm Semiconductor

MOSFET N-CH 650V 29A TO-220AB

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4V @ 3.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 500V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 165W (Tc)
  • Rds On (Max) @ Id, Vgs: 156 mOhm @ 10A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias17.088
SiCFET (Silicon Carbide)
650V
29A (Tc)
18V
4V @ 3.3mA
61nC @ 18V
1200pF @ 500V
+22V, -6V
-
165W (Tc)
156 mOhm @ 10A, 18V
175°C (TJ)
Through Hole
TO-220AB
TO-220-3
SCT2H12NZGC11
Rohm Semiconductor

MOSFET N-CH 1700V 3.7A

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1700V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4V @ 900µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 800V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PFM
  • Package / Case: TO-3PFM, SC-93-3
Paquete: TO-3PFM, SC-93-3
En existencias22.524
SiCFET (Silicon Carbide)
1700V
3.7A (Tc)
18V
4V @ 900µA
14nC @ 18V
184pF @ 800V
+22V, -6V
-
35W (Tc)
1.5 Ohm @ 1.1A, 18V
175°C (TJ)
Through Hole
TO-3PFM
TO-3PFM, SC-93-3
SCT2450KEC
Rohm Semiconductor

MOSFET N-CH 1200V 10A TO-247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4V @ 900µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 463pF @ 800V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 585 mOhm @ 3A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias20.796
SiCFET (Silicon Carbide)
1200V
10A (Tc)
18V
4V @ 900µA
27nC @ 18V
463pF @ 800V
+22V, -6V
-
85W (Tc)
585 mOhm @ 3A, 18V
175°C (TJ)
Through Hole
TO-247
TO-247-3
hot RJP020N06T100
Rohm Semiconductor

MOSFET N-CH 60V 2A SOT-89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MPT3
  • Package / Case: TO-243AA
Paquete: TO-243AA
En existencias275.112
MOSFET (Metal Oxide)
60V
2A (Ta)
2.5V, 4.5V
1.5V @ 1mA
10nC @ 4V
160pF @ 10V
±12V
-
500mW (Ta)
240 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
MPT3
TO-243AA
hot RSQ015P10TR
Rohm Semiconductor

MOSFET P-CH 100V 1.5A TSMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 470 mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Paquete: SOT-23-6 Thin, TSOT-23-6
En existencias73.560
MOSFET (Metal Oxide)
100V
1.5A (Ta)
4V, 10V
2.5V @ 1mA
17nC @ 5V
950pF @ 25V
±20V
-
600mW (Ta)
470 mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
hot 2SK3065T100
Rohm Semiconductor

MOSFET N-CH 60V 2A SOT-89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 320 mOhm @ 1A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MPT3
  • Package / Case: TO-243AA
Paquete: TO-243AA
En existencias2.296.920
MOSFET (Metal Oxide)
60V
2A (Ta)
2.5V, 4V
1.5V @ 1mA
-
160pF @ 10V
±20V
-
500mW (Ta)
320 mOhm @ 1A, 4V
150°C (TJ)
Surface Mount
MPT3
TO-243AA
hot RTR025N03TL
Rohm Semiconductor

MOSFET N-CH 30V 2.5A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V
  • Vgs (Max): 12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 92 mOhm @ 2.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
Paquete: SC-96
En existencias2.007.852
MOSFET (Metal Oxide)
30V
2.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
4.6nC @ 4.5V
220pF @ 10V
12V
-
1W (Ta)
92 mOhm @ 2.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
hot RUF015N02TL
Rohm Semiconductor

MOSFET N-CH 20V 1.5A TUMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT3
  • Package / Case: 3-SMD, Flat Leads
Paquete: 3-SMD, Flat Leads
En existencias167.280
MOSFET (Metal Oxide)
20V
1.5A (Ta)
1.8V, 4.5V
1V @ 1mA
2.5nC @ 4.5V
110pF @ 10V
±10V
-
800mW (Ta)
180 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
TUMT3
3-SMD, Flat Leads
hot RTR040N03TL
Rohm Semiconductor

MOSFET N-CH 30V 4A TSMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
Paquete: SC-96
En existencias1.498.452
MOSFET (Metal Oxide)
30V
4A (Ta)
2.5V, 4.5V
1.5V @ 1mA
8.3nC @ 4.5V
475pF @ 10V
±12V
-
1W (Ta)
48 mOhm @ 4A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
hot RSU002P03T106
Rohm Semiconductor

MOSFET P-CH 30V 0.25A SOT-323

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 250mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UMT3
  • Package / Case: SC-70, SOT-323
Paquete: SC-70, SOT-323
En existencias481.224
MOSFET (Metal Oxide)
30V
250mA (Ta)
4V, 10V
2.5V @ 1mA
-
30pF @ 10V
±20V
-
200mW (Ta)
1.4 Ohm @ 250mA, 10V
150°C (TJ)
Surface Mount
UMT3
SC-70, SOT-323
hot RUM003N02T2L
Rohm Semiconductor

MOSFET N-CH 20V 300MA VMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VMT3
  • Package / Case: SOT-723
Paquete: SOT-723
En existencias4.967.664
MOSFET (Metal Oxide)
20V
300mA (Ta)
1.8V, 4V
1V @ 1mA
-
25pF @ 10V
±8V
-
150mW (Ta)
1 Ohm @ 300mA, 4V
150°C (TJ)
Surface Mount
VMT3
SOT-723
hot 2SK3541T2L
Rohm Semiconductor

MOSFET N-CH 30V .1A VMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VMT3
  • Package / Case: SOT-723
Paquete: SOT-723
En existencias4.569.240
MOSFET (Metal Oxide)
30V
100mA (Ta)
2.5V, 4V
1.5V @ 100µA
-
13pF @ 5V
±20V
-
150mW (Ta)
8 Ohm @ 10mA, 4V
150°C (TJ)
Surface Mount
VMT3
SOT-723
hot 2SK3018T106
Rohm Semiconductor

MOSFET N-CH 30V .1A SOT-323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UMT3
  • Package / Case: SC-70, SOT-323
Paquete: SC-70, SOT-323
En existencias17.036.316
MOSFET (Metal Oxide)
30V
100mA (Ta)
2.5V, 4V
1.5V @ 100µA
-
13pF @ 5V
±20V
-
200mW (Ta)
8 Ohm @ 10mA, 4V
150°C (TJ)
Surface Mount
UMT3
SC-70, SOT-323
hot 2SK3019TL
Rohm Semiconductor

MOSFET N-CH 30V .1A SOT416

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: EMT3
  • Package / Case: SC-75, SOT-416
Paquete: SC-75, SOT-416
En existencias5.418.120
MOSFET (Metal Oxide)
30V
100mA (Ta)
2.5V, 4V
1.5V @ 100µA
-
13pF @ 5V
±20V
-
150mW (Ta)
8 Ohm @ 10mA, 4V
150°C (TJ)
Surface Mount
EMT3
SC-75, SOT-416
hot RUM001L02T2CL
Rohm Semiconductor

MOSFET N-CH 20V 0.1A VMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VMT3
  • Package / Case: SOT-723
Paquete: SOT-723
En existencias1.932.720
MOSFET (Metal Oxide)
20V
100mA (Ta)
1.2V, 4.5V
1V @ 100µA
-
7.1pF @ 10V
±8V
-
150mW (Ta)
3.5 Ohm @ 100mA, 4.5V
150°C (TJ)
Surface Mount
VMT3
SOT-723
hot RK7002BT116
Rohm Semiconductor

MOSFET N-CH 60V 0.25A SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SST3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias1.046.388
MOSFET (Metal Oxide)
60V
250mA (Ta)
2.5V, 10V
2.3V @ 1mA
-
15pF @ 25V
±20V
-
200mW (Ta)
2.4 Ohm @ 250mA, 10V
150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
hot RZM001P02T2L
Rohm Semiconductor

MOSFET P-CH 20V 0.1A VMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VMT3
  • Package / Case: SOT-723
Paquete: SOT-723
En existencias7.072
MOSFET (Metal Oxide)
20V
100mA (Ta)
1.2V, 4.5V
1V @ 100µA
-
15pF @ 10V
±10V
-
150mW (Ta)
3.8 Ohm @ 100mA, 4.5V
150°C (TJ)
Surface Mount
VMT3
SOT-723