Toshiba Semiconductor and Storage Productos - Transistores - IGBT - Simple | Heisener Electronics
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Toshiba Semiconductor and Storage Productos - Transistores - IGBT - Simple

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Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
GT50J121(Q)
Toshiba Semiconductor and Storage

IGBT 600V 50A 240W TO3P LH

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
  • Power - Max: 240W
  • Switching Energy: 1.3mJ (on), 1.34mJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 90ns/300ns
  • Test Condition: 300V, 50A, 13 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(LH)
Paquete: TO-3PL
En existencias4.736
600V
50A
100A
2.45V @ 15V, 50A
240W
1.3mJ (on), 1.34mJ (off)
Standard
-
90ns/300ns
300V, 50A, 13 Ohm, 15V
-
150°C (TJ)
Through Hole
TO-3PL
TO-3P(LH)
GT8G133(TE12L,Q)
Toshiba Semiconductor and Storage

IGBT 400V 600MW 8TSSOP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 150A
  • Power - Max: 600mW
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 1.7µs/2µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
Paquete: 8-TSSOP (0.173", 4.40mm Width)
En existencias2.100
400V
-
150A
2.9V @ 4V, 150A
600mW
-
Standard
-
1.7µs/2µs
-
-
150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot GT60N321(Q)
Toshiba Semiconductor and Storage

IGBT 1000V 60A 170W TO3P LH

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
  • Power - Max: 170W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 330ns/700ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 2.5µs
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(LH)
Paquete: TO-3PL
En existencias22.140
1000V
60A
120A
2.8V @ 15V, 60A
170W
-
Standard
-
330ns/700ns
-
2.5µs
150°C (TJ)
Through Hole
TO-3PL
TO-3P(LH)
GT10J312(Q)
Toshiba Semiconductor and Storage

IGBT 600V 10A 60W TO220SM

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Power - Max: 60W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 400ns/400ns
  • Test Condition: 300V, 10A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-220SM
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias2.992
600V
10A
20A
2.7V @ 15V, 10A
60W
-
Standard
-
400ns/400ns
300V, 10A, 100 Ohm, 15V
200ns
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-220SM
GT10G131(TE12L,Q)
Toshiba Semiconductor and Storage

IGBT 400V 1W 8-SOIC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 4V, 200A
  • Power - Max: 1W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 3.1µs/2µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
Paquete: 8-SOIC (0.173", 4.40mm Width)
En existencias2.432
400V
-
200A
2.3V @ 4V, 200A
1W
-
Standard
-
3.1µs/2µs
-
-
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)