Imagen |
Nº de pieza |
Fabricantes |
Descripción |
Paquete |
En existencias |
Cantidad |
Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Power - Max | Switching Energy | Input Type | Gate Charge | Td (on/off) @ 25°C | Test Condition | Reverse Recovery Time (trr) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage |
IGBT 600V 50A 240W TO3P LH
|
Paquete: TO-3PL |
En existencias4.736 |
|
600V | 50A | 100A | 2.45V @ 15V, 50A | 240W | 1.3mJ (on), 1.34mJ (off) | Standard | - | 90ns/300ns | 300V, 50A, 13 Ohm, 15V | - | 150°C (TJ) | Through Hole | TO-3PL | TO-3P(LH) |
||
Toshiba Semiconductor and Storage |
IGBT 400V 600MW 8TSSOP
|
Paquete: 8-TSSOP (0.173", 4.40mm Width) |
En existencias2.100 |
|
400V | - | 150A | 2.9V @ 4V, 150A | 600mW | - | Standard | - | 1.7µs/2µs | - | - | 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
||
Toshiba Semiconductor and Storage |
IGBT 1000V 60A 170W TO3P LH
|
Paquete: TO-3PL |
En existencias22.140 |
|
1000V | 60A | 120A | 2.8V @ 15V, 60A | 170W | - | Standard | - | 330ns/700ns | - | 2.5µs | 150°C (TJ) | Through Hole | TO-3PL | TO-3P(LH) |
||
Toshiba Semiconductor and Storage |
IGBT 600V 10A 60W TO220SM
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias2.992 |
|
600V | 10A | 20A | 2.7V @ 15V, 10A | 60W | - | Standard | - | 400ns/400ns | 300V, 10A, 100 Ohm, 15V | 200ns | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220SM |
||
Toshiba Semiconductor and Storage |
IGBT 400V 1W 8-SOIC
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias2.432 |
|
400V | - | 200A | 2.3V @ 4V, 200A | 1W | - | Standard | - | 3.1µs/2µs | - | - | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |