Nexperia USA Inc. Productos

BSH108,215

Nexperia USA Inc.

MOSFET N-CH 30V 1.9A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 830mW (Tc)
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 10V
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-236AB (SOT23)
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

PSMN6R3-120PS

Nexperia USA Inc.

MOSFET N-CH 120V 70A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 207.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11384pF @ 60V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 405W (Tc)
• Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paquete: TO-220-3

BSV52,215

Nexperia USA Inc.

TRANS NPN 12V 0.1A SOT-23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 12V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 400nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 500MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

Paquete: TO-236-3, SC-59, SOT-23-3

PDTC144ETVL

Nexperia USA Inc.

TRANS PREBIAS NPN 250MW TO236AB

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: -
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

Paquete: TO-236-3, SC-59, SOT-23-3

PBLS6021D,115

Nexperia USA Inc.

TRANS NPN PREBIAS/PNP 6TSOP

• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (Ic) (Max): 100mA, 1.5A
• Voltage - Collector Emitter Breakdown (Max): 50V, 60V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 2.2k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 140 @ 1A, 2V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 260mV @ 100mA, 1.5A
• Current - Collector Cutoff (Max): 1µA, 100nA
• Frequency - Transition: 150MHz
• Power - Max: 760mW
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: 6-TSOP

Paquete: SC-74, SOT-457

NZX22B,133

Nexperia USA Inc.

DIODE ZENER 22V 500MW ALF2

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 65 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 15.4V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: ALF2

Paquete: DO-204AH, DO-35, Axial

BZX585-B10,135

Nexperia USA Inc.

DIODE ZENER 10V 300MW SOD523

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±2%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 200nA @ 7V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523

Paquete: SC-79, SOD-523

TDZ11J,115

Nexperia USA Inc.

DIODE ZENER 11V 500MW SOD323F

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 8V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

Paquete: SC-90, SOD-323F

BAV21,143

Nexperia USA Inc.

DIODE GEN PURP 200V 250MA ALF2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 250mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: ALF2
• Operating Temperature - Junction: 175°C (Max)

Paquete: DO-204AH, DO-35, Axial

NPIC6C4894D-Q100Y

Nexperia USA Inc.

IC SHIFT REGISTER 12BIT SO20

• Logic Type: Shift Register
• Output Type: Open Drain
• Number of Elements: 1
• Number of Bits per Element: 12
• Function: Serial to Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SO

Paquete: 20-SOIC (0.295", 7.50mm Width)

74LVC1GU04GX,125

Nexperia USA Inc.

IC INVERTER SGL UNBUFF X2SON5

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 3ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 4-DFN-EP (2x2)
• Package / Case: 4-XFDFN Exposed Pad

Paquete: 4-XFDFN Exposed Pad

74LVC2G02DC,125

Nexperia USA Inc.

IC GATE NOR 2CH 2-INP 8-VSSOP

• Logic Type: NOR Gate
• Number of Circuits: 2
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 4µA
• Current - Output High, Low: 32mA, 32mA
• Logic Level - Low: 0.7 V ~ 0.8 V
• Logic Level - High: 1.7 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 8-VSSOP, US8
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)

Paquete: 8-VFSOP (0.091", 2.30mm Width)

74HCT367PW,118

Nexperia USA Inc.

IC BUFF DVR TRI-ST HEX 16TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 2, 4 (Hex)
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 6mA, 6mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

Paquete: 16-TSSOP (0.173", 4.40mm Width)

74AUP2G241DC,125

Nexperia USA Inc.

IC BUFF DVR 3-ST DL L PWR 8VSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 0.8 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)
• Supplier Device Package: 8-VSSOP, US8

Paquete: 8-VFSOP (0.091", 2.30mm Width)

74AUP1T45GW,125

Nexperia USA Inc.

IC TRANSCEIVER LOW POWER 6TSSOP

• Logic Type: Transceiver, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 4mA, 4mA
• Voltage - Supply: 1.1 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: 6-TSSOP

Paquete: 6-TSSOP, SC-88, SOT-363

74HC4851D,118

Nexperia USA Inc.

IC MUX/DEMUX 8X1 16SOIC

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: 8:1
• Number of Circuits: 1
• On-State Resistance (Max): 195 Ohm
• Channel-to-Channel Matching (ΔRon): 3 Ohm
• Voltage - Supply, Single (V+): 2 V ~ 6 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 78ns, 78ns
• -3db Bandwidth: -
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 10pF
• Current - Leakage (IS(off)) (Max): 100nA
• Crosstalk: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SO

Paquete: 16-SOIC (0.154", 3.90mm Width)

PMPB14R0EPX

Nexperia USA Inc.

MOSFET P-CH 30V 9A DFN2020M-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 227 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
• Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN2020MD-6
• Package / Case: 6-UDFN Exposed Pad

Paquete: -

BC857BQC-QZ

Nexperia USA Inc.

TRANS PNP 45V 0.1A DFN1412D-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 45 V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 360 mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1412D-3

Paquete: -

BZX38450-C2V4F

Nexperia USA Inc.

BZX38450-C2V4/SOD323/SOD2

• Voltage - Zener (Nom) (Vz): 2.4 V
• Tolerance: ±5%
• Power - Max: 300 mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 2 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

Paquete: -

74LV08D-C5J

Nexperia USA Inc.

IC GATE AND 4CH 2-INP 14SO

• Logic Type: AND Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1V ~ 5.5V
• Current - Quiescent (Max): 40 µA
• Current - Output High, Low: 12mA, 12mA
• Logic Level - Low: 0.3V ~ 0.8V
• Logic Level - High: 0.9V ~ 2V
• Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SO
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

Paquete: -

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PSMN2R1-30YLEX

Nexperia USA Inc.

PSMN2R1-30YLE/SOT669/LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3749 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 124W (Ta)
• Rds On (Max) @ Id, Vgs: 2.17mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669

Paquete: -

BC856AQB-QZ

Nexperia USA Inc.

SMALL SIGNAL BIPOLAR IN DFN PACK

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 65 V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
• Power - Max: 340 mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 3-XDFN Exposed Pad
• Supplier Device Package: DFN1110D-3

Paquete: -

74HC574BQX

Nexperia USA Inc.

IC FF D-TYPE SNGL 8BIT 20DHVQFN

• Function: Standard
• Type: D-Type
• Output Type: Tri-State, Non-Inverted
• Number of Elements: 1
• Number of Bits per Element: 8
• Clock Frequency: 133 MHz
• Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF
• Trigger Type: Positive Edge
• Current - Output High, Low: 7.8mA, 7.8mA
• Voltage - Supply: 2V ~ 6V
• Current - Quiescent (Iq): 8 µA
• Input Capacitance: 3.5 pF
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-VFQFN Exposed Pad

Paquete: -

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PBHV9040T-QR

Nexperia USA Inc.

PBHV9040T-Q/SOT23/TO-236AB

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 250 mA
• Voltage - Collector Emitter Breakdown (Max): 400 V
• Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 100mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
• Power - Max: 300 mW
• Frequency - Transition: 55MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

Paquete: -

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BC68PA-QX

Nexperia USA Inc.

TRANS PNP 20V 2A 3HUSON

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2 A
• Voltage - Collector Emitter Breakdown (Max): 20 V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
• Power - Max: 420 mW
• Frequency - Transition: 170MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-PowerUDFN
• Supplier Device Package: 3-HUSON (2x2)

Paquete: -

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BZX84-C18-DG-B4VL

Nexperia USA Inc.

DIODE ZENER 17.95V 250MW TO236AB

• Voltage - Zener (Nom) (Vz): 17.95 V
• Tolerance: ±5%
• Power - Max: 250 mW
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

Paquete: -

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BUK9Y13-60ELX

Nexperia USA Inc.

SINGLE N-CHANNEL 60 V, 7.9 MOHM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4520 pF @ 25 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 147W (Ta)
• Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669

Paquete: -

2PD601ART-QVL

Nexperia USA Inc.

2PD601ART-Q/SOT23/TO-236AB

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 10nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
• Power - Max: 250 mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB

Paquete: -

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