ON Semiconductor Productos - Transistores - Bipolar (BJT) - Arreglos, prepolarizados

NUS2401SNT1

ON Semiconductor

TRANS 2NPN/1PNP PREBIAS SC74

• Transistor Type: 2 NPN, 1 PNP - Pre-Biased
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 175, 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA / 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: SC-74

Paquete: SC-74, SOT-457

NUS2401SNT1G

ON Semiconductor

TRANS 2NPN/1PNP PREBIAS SC74

• Transistor Type: 2 NPN, 1 PNP - Pre-Biased
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 175, 10k
• Resistor - Emitter Base (R2) (Ohms): 175, 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA / 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: SC-74

Paquete: SC-74, SOT-457

EMF5XV6T5G

ON Semiconductor

TRANS NPN PREBIAS/PNP SOT563

• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (Ic) (Max): 100mA, 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V, 12V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 270 @ 10mA, 2V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

EMF18XV6T5G

ON Semiconductor

TRANS NPN PREBIAS/PNP SOT563

• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V, 60V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 1mA, 6V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 140MHz
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSTB1002DXV5T1G

ON Semiconductor

TRANS NPN PREBIAS/PNP 0.5W SOT55

• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (Ic) (Max): 100mA, 200mA
• Voltage - Collector Emitter Breakdown (Max): 50V, 40V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 100 @ 1mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: SOT-553

Paquete: SOT-553

NSVBC144EPDXV6T1G

ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSVBC143ZPDXV6T5G

ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSVBC143ZPDXV6T1G

ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSVBC143TPDXV6T1G

ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSVBC124XPDXV6T1G

ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSVBC123JPDXV6T1G

ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSVBC114YPDXV6T1G

ON Semiconductor

TRANS PREBIAS NPN/PNP 50V SOT563

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSVEMC2DXV5T1G

ON Semiconductor

TRANS NPN/PNP 50V BIPOLAR SOT553

• Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: SOT-553

Paquete: SOT-553

NSVBC114EPDXV6T1G

ON Semiconductor

TRANS NPN/PNP BIAS SOT563

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSVBC114EDXV6T1G

ON Semiconductor

TRANS 2NPN BIAS BIPOLAR SOT563

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSVB143ZPDXV6T1G

ON Semiconductor

TRANS BRT 50V 100MA SOT563

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSVB114YPDXV6T1G

ON Semiconductor

TRANS BRT 50V 100MA SOT563

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSVEMD4DXV6T5G

ON Semiconductor

TRANS NPN/PNP DUAL BRT SOT563

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k, 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSVBC124EDXV6T1G

ON Semiconductor

TRANS 2NPN PREBIAS 0.5W SOT563

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSVBA114YDXV6T1G

ON Semiconductor

TRANS 2PNP PREBIAS 0.5W SOT563

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSVB144EPDXV6T1G

ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSVB124XPDXV6T1G

ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSVBC114YDXV6T1G

ON Semiconductor

TRANS 2NPN PREBIAS 0.5W SOT563

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSVB143TPDXV6T1G

ON Semiconductor

TRANS NPN/PNP PREBIAS SOT563

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 357mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSVB123JPDXV6T1G

ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 4.7k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-563

Paquete: SOT-563, SOT-666

NSBC143ZPDP6T5G

ON Semiconductor

TRANS 2NPN PREBIAS 0.339W SOT963

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 339mW
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Supplier Device Package: SOT-963

Paquete: SOT-963

NSVMUN5331DW1T1G

ON Semiconductor

TRANS NPN/PNP 50V BIPO SC88

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 2.2k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SC-88/SC70-6/SOT-363

Paquete: 6-TSSOP, SC-88, SOT-363

NSVMUN5316DW1T1G

ON Semiconductor

TRANS NPN/PNP 50V BIPO SC88-6

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SC-88/SC70-6/SOT-363

Paquete: 6-TSSOP, SC-88, SOT-363