ROHM Semiconductor Europe has launched new power semiconductor solutions and one of its new energy innovations is the fourth-generation SiC mosfet. It achieves up to 50% lower switching losses and 40% lower ON resistance without sacrificing short circuit robustness. The latest generation offers a more flexible gate voltage range (15-18V) and supports zero-voltage turn-off, allowing simple gate drive circuits using unipolar supplies. are used in e-mobility and energy conversion applications.
ROHM Co., Ltd. "Said Dr. Kazuhide Ino, CSO executive Director said："The demand for SiC will continue to grow and ROHM will increase sales. We will accelerate further investment and product development based on the technology we have cultivated to become a leading SiC manufacturer. In addition, our company will continue to come up with solutions that combine SiC products, peripheral components and customer support, "
Samsung Electronics recently increased its production capacity of SiC power semiconductors by building a new factory in Japan. Wolfram Harnack, President of ROHM Semiconductor Europe said："As a vertically integrated semiconductor manufacturer, we are largely independent of our suppliers and can be more flexible in responding to market changes. The high degree of integration of our fabs gives us an advantage over other manufacturers that outsource many of their production steps. In addition, we are working hard to further optimize the supply chain, including our production systems, and achieve stable supply for our customers, "
The company's production subsidiary, siccrystal, plans to increase its capacity and manpower. "Siccrystal's intermediate goal is to achieve nine-figure sales by producing 100,000 substrates per year," said Dr. Robert Eckstein, CEO of siccrystal.
