Rohm's new SiC (silicon carbide) BSM180D12P3C007 power module has a rated power of 1200V / 180A, based on its internal supply chain capabilities and advanced packaging capabilities. Half-bridge SiC modules integrate mass-produced trench-type SiC MOSFETs and SiC SBDs in the same footprint as previous modules.
Rohm first introduced commercial power modules equipped with SiC-MOSFETs and SiC-SBDs, and was able to successfully mass-produce the industry's first trench-type SiC MOSFETs with a proprietary structure, thereby ensuring long-term reliability. The new module uses an advanced UMOS structure to implement the MOSFET, eliminating the need for a JFET region and maximizing SiC characteristics. It has the lowest drain-source resistance and high-speed switching performance, and-due to the extremely low Vf and the fast recovery performance of the built-in SiC-SBD-it has almost no recovery loss Err.
As a result, compared with the planar SiC module using the second-generation SiC-DMOS structure, the switching loss of the module is 77% lower than that of the conventional IGBT module, and the switching loss is lower than 42%. The company says that this not only makes high-frequency operation possible, but also helps shrink cooling systems and smaller peripheral components, paving the way for saving more energy and miniaturizing end products.
