Página 6 - Diodes Incorporated Productos - Transistores - FET, MOSFET - Simple | Heisener Electronics
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Diodes Incorporated Productos - Transistores - FET, MOSFET - Simple

Registros 2.523
Página  6/85
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Paquete
En existencias
Cantidad
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DMN3009SFGQ-7
Diodes Incorporated

MOSFET N-CH 30V 16A PWRDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2 nF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
Paquete: -
En existencias2.850
MOSFET (Metal Oxide)
30 V
16A (Ta), 45A (Tc)
4.5V, 10V
2.5V @ 250µA
42 nC @ 10 V
2 nF @ 15 V
±20V
-
900mW (Ta)
5.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
2N7002KQ-13
Diodes Incorporated

2N7002 FAMILY SOT23 T&R 10K

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 370mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: -
En existencias30.000
MOSFET (Metal Oxide)
60 V
310mA (Ta)
5V, 10V
2.5V @ 1mA
0.3 nC @ 4.5 V
50 pF @ 25 V
±20V
-
370mW (Ta)
2Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMP3021SFVW-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
Paquete: -
En existencias5.682
MOSFET (Metal Oxide)
30 V
11A (Ta), 42A (Tc)
5V, 10V
2.5V @ 250µA
34 nC @ 10 V
1799 pF @ 15 V
±25V
-
1W (Ta)
15mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMN52D0UQ-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT23 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
50 V
400mA (Ta)
1.8V, 5V
1V @ 250µA
1.5 nC @ 10 V
39 pF @ 25 V
±12V
-
500mW
2Ohm @ 50mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMT12H065LFDF-13
Diodes Incorporated

MOSFET N-CH 115V 4.3A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 115 V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 50 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
115 V
4.3A (Ta)
3V, 10V
2.2V @ 250µA
5.5 nC @ 10 V
252 pF @ 50 V
±12V
-
1W (Ta)
65mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMP3036SFV-13
Diodes Incorporated

MOSFET P-CH 30V 30A POWERDI3333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8
  • Package / Case: 8-PowerVDFN
Paquete: -
En existencias8.871
MOSFET (Metal Oxide)
30 V
30A (Ta)
5V, 10V
2.5V @ 250µA
16.5 nC @ 10 V
1931 pF @ 15 V
±25V
-
2.3W (Ta)
20mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8
8-PowerVDFN
DMPH4029LFGQ-13
Diodes Incorporated

MOSFET P-CH 40V 8A/22A PWRDI3333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
40 V
8A (Ta), 22A (Tc)
4.5V, 10V
3V @ 250µA
34 nC @ 10 V
1626 pF @ 20 V
±20V
-
1.2W (Ta)
29mOhm @ 3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMT10H9M9SK3-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V TO252 T&R

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMP21D6UFB4-7B
Diodes Incorporated

MOSFET P-CH 20V 580MA 3DFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 510mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN1006-3
  • Package / Case: 3-XFDFN
Paquete: -
En existencias28.350
MOSFET (Metal Oxide)
20 V
580mA (Ta)
1.8V, 4.5V
1V @ 250µA
0.8 nC @ 8 V
46.1 pF @ 10 V
±8V
-
510mW (Ta)
1Ohm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN1006-3
3-XFDFN
DMT15H035SCT
Diodes Incorporated

MOSFET BVDSS: 101V~250V TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
150 V
46A (Tc)
10V
4V @ 250µA
25 nC @ 10 V
1600 pF @ 75 V
±20V
-
2.2W (Ta)
35mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
ZVP4525GQTA
Diodes Incorporated

MOSFET BVDSS: 101V~250V SOT223 T

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 25 V
  • Vgs (Max): ±40V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
250 V
265mA (Ta)
3.5V, 10V
2V @ 1mA
3 nC @ 10 V
82 pF @ 25 V
±40V
-
2W (Ta)
14Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
DMP3018SFV-7
Diodes Incorporated

MOSFET P-CH 30V 11A PWRDI3333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2147 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8 (Type UX)
  • Package / Case: 8-PowerVDFN
Paquete: -
En existencias51.021
MOSFET (Metal Oxide)
30 V
11A (Ta), 35A (Tc)
4.5V, 10V
3V @ 250µA
51 nC @ 10 V
2147 pF @ 15 V
±25V
-
1W (Ta)
12mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8 (Type UX)
8-PowerVDFN
DMN2310U-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 480mW (Ta)
  • Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: -
En existencias39.819
MOSFET (Metal Oxide)
20 V
1.6A (Ta)
1.8V, 4.5V
950mV @ 250µA
0.7 nC @ 4.5 V
38 pF @ 10 V
±8V
-
480mW (Ta)
175mOhm @ 300mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMP4026SFG-7
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.6W (Ta), 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
40 V
28A (Tc)
4.5V, 10V
1.8V @ 250µA
48 nC @ 10 V
2275 pF @ 20 V
±20V
-
2.6W (Ta), 33W (Tc)
25mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMTH61M8LPS-13
Diodes Incorporated

MOSFET N-CH 60V 225A PWRDI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 115.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 187.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
Paquete: -
En existencias5.175
MOSFET (Metal Oxide)
60 V
225A (Tc)
4.5V, 10V
3V @ 250µA
115.5 nC @ 10 V
8320 pF @ 30 V
±20V
-
3.2W (Ta), 187.5W (Tc)
1.6mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
DMT31M7LSS-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SO-8 T&R 2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 78A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5492 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta), 5.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
30 V
25A (Ta), 78A (Tc)
4.5V, 10V
3V @ 250µA
84 nC @ 10 V
5492 pF @ 15 V
±20V
-
1.7W (Ta), 5.9W (Tc)
2.7mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
DMP3018SSS-13
Diodes Incorporated

MOSFET P-CH 30V 10.5/25A 8SO T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paquete: -
En existencias13.476
MOSFET (Metal Oxide)
30 V
10.5A (Ta), 25A (Tc)
4.5V, 10V
3V @ 250µA
57 nC @ 10 V
2714 pF @ 15 V
±25V
-
1.2W (Ta)
12mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
DMT615MLFV-7
Diodes Incorporated

MOSFET N-CH 60V PWRDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.76W (Ta)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8 (Type UX)
  • Package / Case: 8-PowerVDFN
Paquete: -
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MOSFET (Metal Oxide)
60 V
8.5A (Ta), 38A (Tc)
4.5V, 10V
3V @ 250µA
15.5 nC @ 10 V
1039 pF @ 30 V
±20V
-
1.76W (Ta)
16mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8 (Type UX)
8-PowerVDFN
DMTH31M7LPSQ-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5741 pF @ 15 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 113W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
Paquete: -
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MOSFET (Metal Oxide)
30 V
30A (Ta), 100A (Tc)
4.5V, 10V
3V @ 250µA
90 nC @ 10 V
5741 pF @ 15 V
±16V
-
1.3W (Ta), 113W (Tc)
1.7mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
DMN31D5UFZQ-7B
Diodes Incorporated

MOSFET BVDSS: 25V~30V X2-DFN0606

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.38 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 22.6 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN0606-3
  • Package / Case: 3-XFDFN
Paquete: -
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MOSFET (Metal Oxide)
30 V
410mA (Ta)
1.5V, 4.5V
1V @ 250µA
0.38 nC @ 4.5 V
22.6 pF @ 15 V
±12V
-
400mW (Ta)
1.5Ohm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN0606-3
3-XFDFN
DMPH4016SPSW-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 90.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.6W (Ta), 143W (Tc)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 9.8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
Paquete: -
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MOSFET (Metal Oxide)
40 V
90.7A (Tc)
4.5V, 10V
2.5V @ 250µA
112 nC @ 10 V
5697 pF @ 20 V
±20V
-
4.6W (Ta), 143W (Tc)
10mOhm @ 9.8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMP6111SVT-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Paquete: -
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MOSFET (Metal Oxide)
60 V
2.7A (Ta)
4.5V, 10V
3V @ 250µA
23.2 nC @ 10 V
1283 pF @ 30 V
±20V
-
1.1W (Ta)
115mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
DMTH43M7LFG-7
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2182 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 65.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
Paquete: -
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MOSFET (Metal Oxide)
40 V
100A (Tc)
5V, 10V
2.5V @ 250µA
30 nC @ 10 V
2182 pF @ 20 V
±20V
-
3.5W (Ta), 65.2W (Tc)
3mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMTH10H015SK3-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V TO252 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paquete: -
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MOSFET (Metal Oxide)
100 V
59A (Tc)
6V, 10V
4V @ 250µA
30.1 nC @ 10 V
2343 pF @ 50 V
±20V
-
2W (Ta)
14mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMN52D0U-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT23 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: -
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MOSFET (Metal Oxide)
50 V
400mA (Ta)
1.8V, 5V
1V @ 250µA
1.5 nC @ 10 V
39 pF @ 25 V
±12V
-
500mW
2Ohm @ 50mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMN2013UFDEQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V U-DFN2020-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.8 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2453 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 660mW (Ta)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 8.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type E)
  • Package / Case: 6-PowerUDFN
Paquete: -
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MOSFET (Metal Oxide)
20 V
10.5A (Ta)
1.5V, 4.5V
1.1V @ 250µA
25.8 nC @ 8 V
2453 pF @ 10 V
±8V
-
660mW (Ta)
11mOhm @ 8.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type E)
6-PowerUDFN
DMN2310UFD-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V U-DFN1212-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 670mW (Ta)
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN1212-3 (Type C)
  • Package / Case: 3-PowerUDFN
Paquete: -
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MOSFET (Metal Oxide)
20 V
1.7A (Ta)
1.5V, 4.5V
950mV @ 250µA
0.7 nC @ 4.5 V
38 pF @ 10 V
±8V
-
670mW (Ta)
240mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN1212-3 (Type C)
3-PowerUDFN
DMP3036SFVQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V PowerDI333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8 (Type UX)
  • Package / Case: 8-PowerVDFN
Paquete: -
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MOSFET (Metal Oxide)
30 V
8.7A (Ta), 30A (Tc)
5V, 10V
2.5V @ 250µA
16.5 nC @ 10 V
1931 pF @ 15 V
±25V
-
900mW (Ta)
20mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8 (Type UX)
8-PowerVDFN
DMN65D8LT-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT523 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
Paquete: -
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MOSFET (Metal Oxide)
60 V
210mA (Ta)
5V, 10V
2V @ 250µA
0.4 nC @ 4.5 V
24 pF @ 25 V
±20V
-
300mW (Ta)
5Ohm @ 115mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
DMS3014SFGQ-13
Diodes Incorporated

MOSFET N-CH 30V 9.5A PWRDI3333-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
Paquete: -
En existencias8.970
MOSFET (Metal Oxide)
30 V
9.5A (Ta)
4.5V, 10V
2.2V @ 250µA
19.3 nC @ 10 V
4310 pF @ 15 V
±12V
-
1W (Ta)
14.5mOhm @ 10.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN