Página 7 - Diodes Incorporated Productos - Transistores - FET, MOSFET - Simple | Heisener Electronics
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Diodes Incorporated Productos - Transistores - FET, MOSFET - Simple

Registros 2.523
Página  7/85
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Paquete
En existencias
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DMT3009LFVW-13
Diodes Incorporated

MOSFET N-CH 30V 12A PWRDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
30 V
12A (Ta), 50A (Tc)
3.8V, 10V
3V @ 250µA
12 nC @ 10 V
823 pF @ 15 V
±20V
-
2.3W (Ta)
11mOhm @ 14.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMG7430LFGQ-13
Diodes Incorporated

MOSFET N-CH 30V 10.5A PWRDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1281 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
30 V
10.5A (Ta)
4.5V, 10V
2.5V @ 250µA
26.7 nC @ 10 V
1281 pF @ 15 V
±20V
-
900mW (Ta)
11mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMP3011SFVW-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 980mW (Ta)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
Paquete: -
En existencias5.850
MOSFET (Metal Oxide)
30 V
19.8A (Ta), 50A (Tc)
4.5V, 10V
3V @ 250µA
46 nC @ 10 V
2380 pF @ 15 V
±25V
-
980mW (Ta)
10mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMN21D2UFB-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V X1-DFN1006-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.93 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 27.6 pF @ 16 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 380mW (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X1-DFN1006-3
  • Package / Case: 3-UFDFN
Paquete: -
En existencias9.000
MOSFET (Metal Oxide)
20 V
760mA (Ta)
1.5V, 4.5V
1V @ 250µA
0.93 nC @ 10 V
27.6 pF @ 16 V
±12V
-
380mW (Ta)
990mOhm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X1-DFN1006-3
3-UFDFN
DMP510DLQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT23 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 196mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520mW (Ta)
  • Rds On (Max) @ Id, Vgs: 9.5Ohm @ 100mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
50 V
196mA (Ta)
5V
2V @ 1mA
0.5 nC @ 10 V
40 pF @ 25 V
±30V
-
520mW (Ta)
9.5Ohm @ 100mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMG1012T-13
Diodes Incorporated

MOSFET N-CH 20V 630MA SOT523 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 280mW (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
Paquete: -
En existencias56.100
MOSFET (Metal Oxide)
20 V
630mA (Ta)
1.8V, 4.5V
1V @ 250µA
0.74 nC @ 4.5 V
60.67 pF @ 16 V
±6V
-
280mW (Ta)
400mOhm @ 600mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
DMTH15H053SPSW-13
Diodes Incorporated

MOSFET BVDSS: 101V~250V POWERDI5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 66mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
150 V
25A (Tc)
10V
4V @ 250µA
11.5 nC @ 10 V
814 pF @ 75 V
±20V
-
2.3W (Ta), 107W (Tc)
66mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMN67D7L-13
Diodes Incorporated

MOSFET N-CH 60V 210MA SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.821 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
  • Vgs (Max): ±40V
  • FET Feature: -
  • Power Dissipation (Max): 570mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: -
En existencias30.000
MOSFET (Metal Oxide)
60 V
210mA (Ta)
5V, 10V
2.5V @ 250µA
0.821 nC @ 10 V
22 pF @ 25 V
±40V
-
570mW (Ta)
5Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMTH6016LFDFW-7
Diodes Incorporated

MOSFET N-CH 60V 9.4A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.06W (Ta)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
  • Package / Case: 6-UDFN Exposed Pad
Paquete: -
En existencias9.000
MOSFET (Metal Oxide)
60 V
9.4A (Ta)
4.5V, 10V
3V @ 250µA
15.3 nC @ 10 V
925 pF @ 30 V
±20V
-
1.06W (Ta)
18mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
U-DFN2020-6 (SWP) (Type F)
6-UDFN Exposed Pad
DMP3165L-13
Diodes Incorporated

MOSFET P-CH 30V 3.3A SOT23 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: -
En existencias29.985
MOSFET (Metal Oxide)
30 V
3.3A (Ta)
4.5V, 10V
2.1V @ 250µA
2 nC @ 10 V
300 pF @ 10 V
±20V
-
800mW (Ta)
90mOhm @ 2.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMP2008USS-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SO-8 T&R 2.

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 9mOhm @12A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
20 V
13A (Ta), 38A (Tc)
1.8V, 4.5V
1V @ 250µA
159 nC @ 10 V
6820 pF @ 10 V
±8V
-
1.4W (Ta)
9mOhm @12A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
DMTH43M8LFGQ-13
Diodes Incorporated

MOSFET N-CH 40V PWRDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
Paquete: -
En existencias22.629
MOSFET (Metal Oxide)
40 V
24A (Ta), 100A (Tc)
5V, 10V
2.5V @ 250µA
40.1 nC @ 10 V
2798 pF @ 20 V
±20V
-
2.62W (Ta), 65.2W (Tc)
3mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMPH4013SK3-13
Diodes Incorporated

MOSFET P-CH 40V 55A TO252 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paquete: -
En existencias6.006
MOSFET (Metal Oxide)
40 V
55A (Tc)
4.5V, 10V
3V @ 250µA
67 nC @ 10 V
4004 pF @ 20 V
±20V
-
2.1W (Ta)
15mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
ZXMP10A18KQTC
Diodes Incorporated

MOSFET BVDSS: 61V~100V TO252 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Ta)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
100 V
15A (Tc)
6V, 10V
4V @ 250µA
26.9 nC @ 10 V
1055 pF @ 50 V
±20V
-
71W (Ta)
150mOhm @ 2.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMT10H025SSS-13
Diodes Incorporated

MOSFET N-CH 100V 7.4A 8SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paquete: -
En existencias18.480
MOSFET (Metal Oxide)
100 V
7.4A (Ta)
6V, 10V
4V @ 250µA
21.4 nC @ 10 V
1544 pF @ 50 V
±20V
-
1.4W (Ta)
23mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
DMTH4001SPSQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10787 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 187.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 1mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type K)
  • Package / Case: 8-PowerTDFN
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
40 V
225A (Tc)
10V
4V @ 250µA
144 nC @ 10 V
10787 pF @ 20 V
±20V
-
3.1W (Ta), 187.5W (Tc)
1mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8 (Type K)
8-PowerTDFN
DMN2992UFB4Q-7B
Diodes Incorporated

MOSFET BVDSS: 8V~24V X2-DFN1006-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 15.6 pF @ 16 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 380mW (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN1006-3
  • Package / Case: 3-XFDFN
Paquete: -
En existencias28.605
MOSFET (Metal Oxide)
20 V
830mA (Ta)
1.8V, 4.5V
1V @ 250µA
0.41 nC @ 4.5 V
15.6 pF @ 16 V
±8V
-
380mW (Ta)
990mOhm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN1006-3
3-XFDFN
DMP3011SFVW-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 980mW (Ta)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
Paquete: -
En existencias11.676
MOSFET (Metal Oxide)
30 V
19.8A (Ta), 50A (Tc)
4.5V, 10V
3V @ 250µA
46 nC @ 10 V
2380 pF @ 15 V
±25V
-
980mW (Ta)
10mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMP31D7L-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 430mW (Ta)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: -
En existencias30.000
MOSFET (Metal Oxide)
30 V
580mA (Ta)
4.5V, 10V
2.6V @ 250µA
0.36 nC @ 4.5 V
19 pF @ 15 V
±20V
-
430mW (Ta)
900mOhm @ 420mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMN601TKQ-7
Diodes Incorporated

2N7002 FAMILY SOT523 T&R 3K

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 343mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.04 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
Paquete: -
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MOSFET (Metal Oxide)
60 V
343mA (Ta)
5V, 10V
2.5V @ 1mA
1.04 nC @ 10 V
41 pF @ 30 V
±20V
-
400mW (Ta)
2Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
DMT10H052LFDF-7
Diodes Incorporated

MOSFET BVDSS: 61V~100V U-DFN2020

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
Paquete: -
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MOSFET (Metal Oxide)
100 V
5A (Ta)
4.5V, 10V
3V @ 250µA
5.4 nC @ 10 V
258 pF @ 50 V
±20V
-
800mW (Ta)
52mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMPH4023SK3-13
Diodes Incorporated

MOSFET P-CH 40V 50A TO252 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paquete: -
En existencias7.380
MOSFET (Metal Oxide)
40 V
50A (Tc)
10V
3V @ 250µA
18.7 nC @ 10 V
1091 pF @ 20 V
±20V
-
2.1W (Ta)
26mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMP4013SPS-13
Diodes Incorporated

MOSFET P-CH 40V 11A PWRDI5060

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
40 V
11A (Ta), 61A (Tc)
4.5V, 10V
3V @ 250µA
67 nC @ 10 V
4004 pF @ 20 V
±20V
-
1.6W (Ta)
15mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
DMP6018LPS-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.6W (Ta), 113W (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
Paquete: -
En existencias7.500
MOSFET (Metal Oxide)
60 V
60A (Tc)
4.5V, 10V
2.5V @ 250µA
13.7 nC @ 10 V
3505 pF @ 30 V
±20V
-
2.6W (Ta), 113W (Tc)
18mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
DMTH8008SFGQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
80 V
17A (Ta), 68A (Tc)
6V, 10V
4V @ 1mA
31.7 nC @ 10 V
1945 pF @ 40 V
±20V
-
1.2W (Ta), 50W (Tc)
7mOhm @ 14A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMT6013LFDF-7
Diodes Incorporated

MOSFET N-CH 60V 10A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 8.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
60 V
10A (Ta)
4.5V, 10V
2.3V @ 250µA
15 nC @ 10 V
1081 pF @ 30 V
±20V
-
900mW (Ta)
15mOhm @ 8.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMP2165UW-13
Diodes Incorporated

MOSFET P-CH 20V 2.5A SOT323 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
20 V
2.5A (Ta)
1.8V, 4.5V
1V @ 250µA
3.5 nC @ 4.5 V
335 pF @ 15 V
±12V
-
500mW (Ta)
90mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
DMN2055UWQ-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT323 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 520mW (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 3.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
Paquete: -
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MOSFET (Metal Oxide)
20 V
3.1A (Ta)
2.5V, 4.5V
1V @ 250µA
4.3 nC @ 4.5 V
400 pF @ 10 V
±8V
-
520mW (Ta)
46mOhm @ 3.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
DMT32M4LFG-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4366 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
Paquete: -
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MOSFET (Metal Oxide)
30 V
30A (Ta), 100A (Tc)
4.5V, 10V
3V @ 250µA
67 nC @ 10 V
4366 pF @ 15 V
±20V
-
1.1W
1.7mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMP6111SVTQ-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
Paquete: -
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MOSFET (Metal Oxide)
60 V
2.7A (Ta)
4.5V, 10V
3V @ 250µA
23.2 nC @ 10 V
1283 pF @ 30 V
±20V
-
1.1W (Ta)
115mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6