Transistores - Bipolar (BJT) - RF

BF799E6327HTSA1

Infineon Technologies

TRANSISTOR NPN RF 20V SOT-23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: 800MHz
• Noise Figure (dB Typ @ f): 3dB @ 100MHz
• Gain: -
• Power - Max: 280mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

Paquete: TO-236-3, SC-59, SOT-23-3

BFR 93AW E6327

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
• Gain: 10.5dB ~ 15.5dB
• Power - Max: 300mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
• Current - Collector (Ic) (Max): 90mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

Paquete: SC-70, SOT-323

JAN2N2857

Microsemi Corporation

TRANS NPN 15V 0.04A TO-72

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 500MHz
• Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
• Gain: 12.5dB ~ 21dB @ 450MHz
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
• Current - Collector (Ic) (Max): 40mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-72-3 Metal Can
• Supplier Device Package: TO-72

Paquete: TO-72-3 Metal Can

MS2228

Microsemi Corporation

TRANS RF BIPO 175W 5.4A M214

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 65V
• Frequency - Transition: 1.03GHz ~ 1.09GHz
• Noise Figure (dB Typ @ f): -
• Gain: 9dB
• Power - Max: 175W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
• Current - Collector (Ic) (Max): 5.4A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M214
• Supplier Device Package: M214

Paquete: M214

MS2202

Microsemi Corporation

TRANS BIPO NPN M115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 3.5V
• Frequency - Transition: 1.025GHz ~ 1.15GHz
• Noise Figure (dB Typ @ f): -
• Gain: 9dB
• Power - Max: 10W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V
• Current - Collector (Ic) (Max): 250mA
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M115
• Supplier Device Package: M115

Paquete: M115

NESG7030M04-A

CEL

DISCRETE RF DIODE

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 4.3V
• Frequency - Transition: 5.8GHz
• Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz
• Gain: 14dB ~ 21dB
• Power - Max: 125mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Supplier Device Package: M04

Paquete: SOT-343F

MRF559G

Microsemi Corporation

TRANS NPN 16V 150MA MACRO X

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 16V
• Frequency - Transition: 870MHz
• Noise Figure (dB Typ @ f): -
• Gain: 9.5dB
• Power - Max: 2W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
• Current - Collector (Ic) (Max): 150mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: Micro-X ceramic (84C)
• Supplier Device Package: Micro-X ceramic (84C)

Paquete: Micro-X ceramic (84C)

MSC2295-CT1G

ON Semiconductor

TRANS NPN RF BIPO 20V SC-59

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: 150MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SC-59

Paquete: TO-236-3, SC-59, SOT-23-3

MPS5179RLRAG

ON Semiconductor

TRANSISTOR NPN RF BIPO 12V TO-92

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 2GHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 200W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
• Supplier Device Package: TO-92-3

Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

AT-41511-TR2G

Broadcom Limited

TRANS NPN BIPO 12V 50MA SOT-143

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
• Gain: 11dB ~ 15.5dB
• Power - Max: 225mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143

Paquete: TO-253-4, TO-253AA

NE68519-A

CEL

RF TRANSISTOR NPN SOT-523

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
• Gain: 11dB
• Power - Max: 125mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

Paquete: SOT-523

MMBT5770

Fairchild/ON Semiconductor

TRANSISTOR RF NPN SOT-23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 600MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: 225mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
• Current - Collector (Ic) (Max): 10mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

KSC2756YMTF

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 30MA SOT-23

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 20V
• Frequency - Transition: 850MHz
• Noise Figure (dB Typ @ f): 6.5dB @ 200MHz
• Gain: 15dB ~ 23dB
• Power - Max: 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3 (TO-236)

Paquete: TO-236-3, SC-59, SOT-23-3

UPA800T-T1-A

CEL

RF DUAL TRANSISTORS NPN SOT-363

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (Max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
• Gain: 7.5dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

Paquete: 6-TSSOP, SC-88, SOT-363

BFG540W,115

NXP

TRANS RF NPN 15V 9GHZ SOT343N

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz
• Gain: -
• Power - Max: 500mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
• Current - Collector (Ic) (Max): 120mA
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-343 Reverse Pinning
• Supplier Device Package: 4-SO

Paquete: SOT-343 Reverse Pinning

BFR360FH6765XTSA1

Infineon Technologies

TRANS RF NPN 6V 35MA TSFP-3

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 9V
• Frequency - Transition: 14GHz
• Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
• Gain: 15.5dB
• Power - Max: 210mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: PG-TSFP-3

Paquete: SOT-723

DME500

Microsemi Corporation

TRANS RF BIPO 1700W 40A 55KT1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 55V
• Frequency - Transition: 1.025GHz ~ 1.15GHz
• Noise Figure (dB Typ @ f): -
• Gain: 6dB ~ 6.5dB
• Power - Max: 1700W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
• Current - Collector (Ic) (Max): 40A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55KT
• Supplier Device Package: 55KT

Paquete: 55KT

BFU530XVL

NXP

TRANS RF NPN 12V 40MA SOT-143R

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 11GHz
• Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
• Gain: 16.5dB
• Power - Max: 450mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
• Current - Collector (Ic) (Max): 40mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143B

Paquete: TO-253-4, TO-253AA

BFT25,215

NXP

TRANS RF NPN 5V 2.3GHZ SOT23-3

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5V
• Frequency - Transition: 2.3GHz
• Noise Figure (dB Typ @ f): 5.5dB @ 500MHz
• Gain: -
• Power - Max: 30mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 1V
• Current - Collector (Ic) (Max): 6.5mA
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

Paquete: TO-236-3, SC-59, SOT-23-3

BFG403W,115

NXP

TRANS NPN 4.5V 17GHZ SOT343R

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 4.5V
• Frequency - Transition: 17GHz
• Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2GHz
• Gain: 20dB ~ 22dB
• Power - Max: 16mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3mA, 2V
• Current - Collector (Ic) (Max): 3.6mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: CMPAK-4

Paquete: SC-82A, SOT-343

MRF422

M/A-Com Technology Solutions

TRANS RF NPN 35V 20A 211-11

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 35V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: 13dB
• Power - Max: 150W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
• Current - Collector (Ic) (Max): 20A
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: 211-11, Style 2
• Supplier Device Package: 211-11, Style 2

Paquete: 211-11, Style 2

2N5179

Central Semiconductor Corp

TRANS NPN 12V 0.05A TO-72

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 2GHz
• Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
• Gain: 15dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-206AF, TO-72-4 Metal Can
• Supplier Device Package: TO-72

Paquete: TO-206AF, TO-72-4 Metal Can

2SC5066-O,LF

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SSM

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 7GHz
• Noise Figure (dB Typ @ f): 1dB @ 500MHz
• Gain: -
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

Paquete: SC-75, SOT-416

BFU550R

NXP

TRANS RF NPN 12V 50MA SOT-143B

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 11GHz
• Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
• Gain: 21dB
• Power - Max: 450mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143B

Paquete: TO-253-4, TO-253AA

MRFC544

Microsemi Corporation

RF POWER TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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MS1701

Microsemi Corporation

RF POWER TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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PH9034

MACOM Technology Solutions

TRANSISTOR

• Transistor Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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CP616-2N5160-WN

Central Semiconductor Corp

RF TRANSISTOR TO-39

• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (Max): 40V
• Frequency - Transition: 500MHz
• Noise Figure (dB Typ @ f): -
• Gain: -
• Power - Max: -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
• Current - Collector (Ic) (Max): 400mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

Paquete: -

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