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Microchip Technology Productos - Transistores - FET, MOSFET - Simple

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En existencias
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
VN10KN3-G-P013
Microchip Technology

MOSFET N-CH 60V 310MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias4.384
MOSFET (Metal Oxide)
60V
310mA (Tj)
5V, 10V
2.5V @ 1mA
-
60pF @ 25V
±30V
-
1W (Tc)
5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
VN10KN3-G-P003
Microchip Technology

MOSFET N-CH 60V 310MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias3.392
MOSFET (Metal Oxide)
60V
310mA (Tj)
5V, 10V
2.5V @ 1mA
-
60pF @ 25V
±30V
-
1W (Tc)
5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
VN10KN3-G-P002
Microchip Technology

MOSFET N-CH 60V 310MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias6.816
MOSFET (Metal Oxide)
60V
310mA (Tj)
5V, 10V
2.5V @ 1mA
-
60pF @ 25V
±30V
-
1W (Tc)
5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot TN5325K1-G
Microchip Technology

MOSFET N-CH 250V SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias77.280
MOSFET (Metal Oxide)
250V
150mA (Ta)
4.5V, 10V
2V @ 1mA
-
110pF @ 25V
±20V
-
360mW (Ta)
7 Ohm @ 1A, 10V
-
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
LND150N3-G-P014
Microchip Technology

MOSFET N-CH 500V 30MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias2.048
MOSFET (Metal Oxide)
500V
30mA (Tj)
0V
-
-
10pF @ 25V
±20V
Depletion Mode
740mW (Ta)
1000 Ohm @ 500µA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
LND150N3-G-P013
Microchip Technology

MOSFET N-CH 500V 30MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias6.448
MOSFET (Metal Oxide)
500V
30mA (Tj)
0V
-
-
10pF @ 25V
±20V
Depletion Mode
740mW (Ta)
1000 Ohm @ 500µA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
LND150N3-G-P003
Microchip Technology

MOSFET N-CH 500V 30MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias3.792
MOSFET (Metal Oxide)
500V
30mA (Tj)
0V
-
-
10pF @ 25V
±20V
Depletion Mode
740mW (Ta)
1000 Ohm @ 500µA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
LND150N3-G-P002
Microchip Technology

MOSFET N-CH 500V 30MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias5.216
MOSFET (Metal Oxide)
500V
30mA (Tj)
0V
-
-
10pF @ 25V
±20V
Depletion Mode
740mW (Ta)
1000 Ohm @ 500µA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
MIC94051YM4-TR
Microchip Technology

MOSFET P-CH 6V 1.8A 8MSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 6V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V
  • Vgs (Max): 6V
  • FET Feature: -
  • Power Dissipation (Max): 568mW (Ta)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-143
  • Package / Case: TO-253-4, TO-253AA
Paquete: TO-253-4, TO-253AA
En existencias3.904
MOSFET (Metal Oxide)
6V
1.8A (Ta)
1.8V, 4.5V
1.2V @ 250µA
-
600pF @ 5.5V
6V
-
568mW (Ta)
160 mOhm @ 100mA, 4.5V
-40°C ~ 150°C (TJ)
Surface Mount
SOT-143
TO-253-4, TO-253AA
VN2222LL-G-P013
Microchip Technology

MOSFET N-CH 60V 0.23A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta), 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias7.952
MOSFET (Metal Oxide)
60V
230mA (Tj)
5V, 10V
2.5V @ 1mA
-
60pF @ 25V
±30V
-
400mW (Ta), 1W (Tc)
7.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
VN2222LL-G-P003
Microchip Technology

MOSFET N-CH 60V 0.23A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta), 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Paquete: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
En existencias2.880
MOSFET (Metal Oxide)
60V
230mA (Tj)
5V, 10V
2.5V @ 1mA
-
60pF @ 25V
±30V
-
400mW (Ta), 1W (Tc)
7.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot LND250K1-G
Microchip Technology

MOSFET N-CH 500V 0.013A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 13mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1000 Ohm @ 500µA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23 (TO-236AB)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias11.376
MOSFET (Metal Oxide)
500V
13mA (Tj)
0V
-
-
10pF @ 25V
±20V
Depletion Mode
360mW (Ta)
1000 Ohm @ 500µA, 0V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23 (TO-236AB)
TO-236-3, SC-59, SOT-23-3
hot VN2460N8-G
Microchip Technology

MOSFET N-CH 600V 0.2A SOT89-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 20 Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
Paquete: TO-243AA
En existencias49.536
MOSFET (Metal Oxide)
600V
200mA (Tj)
4.5V, 10V
4V @ 2mA
-
150pF @ 25V
±20V
-
1.6W (Ta)
20 Ohm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
hot TN0104N8-G
Microchip Technology

MOSFET N-CH 40V 0.63A TO243AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 630mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
Paquete: TO-243AA
En existencias42.840
MOSFET (Metal Oxide)
40V
630mA (Tj)
3V, 10V
1.6V @ 500µA
-
70pF @ 20V
±20V
-
1.6W (Tc)
2 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
2N7008-G
Microchip Technology

MOSFET N-CH 60V 0.23A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias7.792
MOSFET (Metal Oxide)
60V
230mA (Tj)
5V, 10V
2.5V @ 250µA
-
50pF @ 25V
±30V
-
1W (Tc)
7.5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
DN2470K4-G
Microchip Technology

MOSFET N-CH 700V 0.17A 3DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 42 Ohm @ 100mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias7.808
MOSFET (Metal Oxide)
700V
170mA (Tj)
0V
-
-
540pF @ 25V
±20V
Depletion Mode
2.5W (Ta)
42 Ohm @ 100mA, 0V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot TP2510N8-G
Microchip Technology

MOSFET P-CH 100V 0.48A SOT89-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 750mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
Paquete: TO-243AA
En existencias82.056
MOSFET (Metal Oxide)
100V
480mA (Tj)
10V
2.4V @ 1mA
-
125pF @ 25V
±20V
-
1.6W (Ta)
3.5 Ohm @ 750mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
DN1509N8-G
Microchip Technology

MOSFET N-CH 90V 360MA SOT89-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 360mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 200mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
Paquete: TO-243AA
En existencias6.512
MOSFET (Metal Oxide)
90V
360mA (Tj)
0V
-
-
150pF @ 25V
±20V
Depletion Mode
1.6W (Ta)
6 Ohm @ 200mA, 0V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
MCP87050T-U/MF
Microchip Technology

MOSFET N-CH 25V 8PDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12.5V
  • Vgs (Max): +10V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PDFN (5x6)
  • Package / Case: 8-PowerTDFN
Paquete: 8-PowerTDFN
En existencias6.960
MOSFET (Metal Oxide)
25V
100A (Tc)
4.5V, 10V
1.6V @ 250µA
15nC @ 4.5V
1040pF @ 12.5V
+10V, -8V
-
2.2W (Ta)
5 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PDFN (5x6)
8-PowerTDFN
hot VP2110K1-G
Microchip Technology

MOSFET P-CH 100V 0.12A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias36.840
MOSFET (Metal Oxide)
100V
120mA (Tj)
5V, 10V
3.5V @ 1mA
-
60pF @ 25V
±20V
-
360mW (Ta)
12 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
TP2540N3-G
Microchip Technology

MOSFET P-CH 400V 0.086A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias15.528
MOSFET (Metal Oxide)
400V
86mA (Tj)
4.5V, 10V
2.4V @ 1mA
-
125pF @ 25V
±20V
-
740mW (Ta)
25 Ohm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot VN2210N3-G
Microchip Technology

MOSFET N-CH 100V 1.2A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias6.984
MOSFET (Metal Oxide)
100V
1.2A (Tj)
5V, 10V
2.4V @ 10mA
-
500pF @ 25V
±20V
-
740mW (Tc)
350 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot VP0550N3-G
Microchip Technology

MOSFET P-CH 500V 0.054A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 54mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 Ohm @ 10mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias13.164
MOSFET (Metal Oxide)
500V
54mA (Tj)
5V, 10V
4.5V @ 1mA
-
70pF @ 25V
±20V
-
1W (Tc)
125 Ohm @ 10mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TP2635N3-G
Microchip Technology

MOSFET P-CH 350V 0.18A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: 180mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 15 Ohm @ 300mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias22.704
MOSFET (Metal Oxide)
350V
180mA (Tj)
2.5V, 10V
2V @ 1mA
-
300pF @ 25V
±20V
-
1W (Ta)
15 Ohm @ 300mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TP0620N3-G
Microchip Technology

MOSFET P-CH 200V 0.175A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias21.732
MOSFET (Metal Oxide)
200V
175mA (Tj)
5V, 10V
2.4V @ 1mA
-
150pF @ 25V
±20V
-
1W (Ta)
12 Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
DN2535N5-G
Microchip Technology

MOSFET N-CH 350V 500MA TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias6.420
MOSFET (Metal Oxide)
350V
500mA (Tj)
0V
-
-
300pF @ 25V
±20V
Depletion Mode
15W (Tc)
25 Ohm @ 120mA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot TN2540N3-G
Microchip Technology

MOSFET N-CH 400V 0.175A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias18.228
MOSFET (Metal Oxide)
400V
175mA (Tj)
4.5V, 10V
2V @ 1mA
-
125pF @ 25V
±20V
-
1W (Ta)
12 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
VN2450N3-G
Microchip Technology

MOSFET N-CH 500V 0.2A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 13 Ohm @ 400mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias6.984
MOSFET (Metal Oxide)
500V
200mA (Tj)
4.5V, 10V
4V @ 1mA
-
150pF @ 25V
±20V
-
1W (Ta)
13 Ohm @ 400mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TN2640N3-G
Microchip Technology

MOSFET N-CH 400V 0.22A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 220mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias20.292
MOSFET (Metal Oxide)
400V
220mA (Tj)
4.5V, 10V
2V @ 2mA
-
225pF @ 25V
±20V
-
740mW (Ta)
5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot VP3203N3-G
Microchip Technology

MOSFET P-CH 30V 650MA TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 650mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias10.560
MOSFET (Metal Oxide)
30V
650mA (Tj)
4.5V, 10V
3.5V @ 10mA
-
300pF @ 25V
±20V
-
740mW (Ta)
600 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)