Página 7 - Microchip Technology Productos - Transistores - FET, MOSFET - Simple | Heisener Electronics
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Microchip Technology Productos - Transistores - FET, MOSFET - Simple

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Página  7/7
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Fabricantes
Descripción
Paquete
En existencias
Cantidad
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
MIC94031CYW
Microchip Technology

MOSFET P-CH 16V 1A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 568mW (Ta)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
En existencias2.080
MOSFET (Metal Oxide)
16V
1A (Ta)
-
1.4V @ 250µA
-
-
-
-
568mW (Ta)
450 mOhm @ 100mA, 10V
-55°C ~ 150°C (TJ)
-
-
-
MIC94053BC6-TR
Microchip Technology

MOSFET P-CH 6V 2A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 6V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): 6V
  • FET Feature: -
  • Power Dissipation (Max): 270mW (Ta)
  • Rds On (Max) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6
  • Package / Case: 6-TSSOP, SC-88, SOT-363
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias7.888
MOSFET (Metal Oxide)
6V
2A (Ta)
1.8V, 4.5V
1.2V @ 250µA
-
-
6V
-
270mW (Ta)
84 mOhm @ 100mA, 4.5V
-40°C ~ 150°C (TJ)
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
MIC94052BC6-TR
Microchip Technology

MOSFET P-CH 6V 2A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 6V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): 6V
  • FET Feature: -
  • Power Dissipation (Max): 270mW (Ta)
  • Rds On (Max) @ Id, Vgs: 84 mOhm @ 100mA, 4.5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6
  • Package / Case: 6-TSSOP, SC-88, SOT-363
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias6.496
MOSFET (Metal Oxide)
6V
2A (Ta)
1.8V, 4.5V
1.2V @ 250µA
-
-
6V
-
270mW (Ta)
84 mOhm @ 100mA, 4.5V
-40°C ~ 150°C (TJ)
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
MIC94051BM4 TR
Microchip Technology

MOSFET P-CH 6V 1.8A 8MSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 6V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V
  • Vgs (Max): 6V
  • FET Feature: -
  • Power Dissipation (Max): 568mW (Ta)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-143
  • Package / Case: TO-253-4, TO-253AA
Paquete: TO-253-4, TO-253AA
En existencias6.976
MOSFET (Metal Oxide)
6V
1.8A (Ta)
1.8V, 4.5V
1.2V @ 250µA
-
600pF @ 5.5V
6V
-
568mW (Ta)
160 mOhm @ 100mA, 4.5V
-40°C ~ 150°C (TJ)
Surface Mount
SOT-143
TO-253-4, TO-253AA
MIC94050BM4 TR
Microchip Technology

MOSFET P-CH 6V 1.8A SOT-143

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 6V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V
  • Vgs (Max): 6V
  • FET Feature: -
  • Power Dissipation (Max): 568mW (Ta)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-143
  • Package / Case: TO-253-4, TO-253AA
Paquete: TO-253-4, TO-253AA
En existencias5.456
MOSFET (Metal Oxide)
6V
1.8A (Ta)
1.8V, 4.5V
1.2V @ 250µA
-
600pF @ 5.5V
6V
-
568mW (Ta)
160 mOhm @ 100mA, 4.5V
-40°C ~ 150°C (TJ)
Surface Mount
SOT-143
TO-253-4, TO-253AA