Microsemi Corporation Productos - Transistores - Bipolar (BJT) - Arreglos

JAN2N3811U

Microsemi Corporation

TRANS 2PNP 60V 0.05A

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

Paquete: TO-78-6 Metal Can

JANTXV2N2920U

Microsemi Corporation

TRANS 2NPN 60V 0.03A

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Supplier Device Package: 6-SMD

Paquete: 6-SMD, No Lead

JANTX2N2920L

Microsemi Corporation

TRANS 2NPN 60V 0.03A TO78

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

Paquete: TO-78-6 Metal Can

JANTXV2N2060

Microsemi Corporation

TRANS 2NPN 60V 500MA TO78

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Power - Max: 600mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

Paquete: TO-78-6 Metal Can

JANTX2N6989U

Microsemi Corporation

TRANS 4NPN 50V 0.8A 20CLCC

• Transistor Type: 4 NPN (Quad)
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 1W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 20-CLCC
• Supplier Device Package: 20-CLCC

Paquete: 20-CLCC

JANTX2N5794U

Microsemi Corporation

TRANS 2NPN 40V 0.6A TO-78

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 600mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Supplier Device Package: 6-SMD

Paquete: 6-SMD, No Lead

JANTX2N4854U

Microsemi Corporation

TRANS NPN/PNP 40V 0.6A 6SMD

• Transistor Type: NPN, PNP
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 600mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Supplier Device Package: 6-SMD

Paquete: 6-SMD, No Lead

JANTX2N5796U

Microsemi Corporation

TRANS 2PNP 60V 0.6A U-PKG

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 600mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Supplier Device Package: 6-SMD

Paquete: 6-SMD, No Lead

JANTX2N5794

Microsemi Corporation

TRANS 2NPN 40V 0.6A TO-78

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 600mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

Paquete: TO-78-6 Metal Can

SG2023J-883B

Microsemi Corporation

TRANS 7NPN DARL 95V 0.5A 16JDIP

• Transistor Type: 7 NPN Darlington
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 95V
• Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: -
• Supplier Device Package: 16-CDIP

Paquete: -

2N6989

Microsemi Corporation

TRANS 4NPN 50V 0.8A TO116

• Transistor Type: 4 NPN (Quad)
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 1.5W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 14-DIP (0.300", 7.62mm)
• Supplier Device Package: TO-116

Paquete: 14-DIP (0.300", 7.62mm)

2N3811U

Microsemi Corporation

TRANS 2PNP 60V 0.05A TO-78

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

Paquete: TO-78-6 Metal Can

2N3811L

Microsemi Corporation

TRANS 2PNP 60V 0.05A TO-78

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

Paquete: TO-78-6 Metal Can

2N3811

Microsemi Corporation

TRANS 2PNP 60V 0.05A TO-78

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

Paquete: TO-78-6 Metal Can

JANTXV2N3811U

Microsemi Corporation

TRANS 2PNP 60V 0.05A

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

Paquete: TO-78-6 Metal Can

JANTXV2N3811L

Microsemi Corporation

TRANS 2PNP 60V 0.05A

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

Paquete: TO-78-6 Metal Can

JANTXV2N3811

Microsemi Corporation

TRANS 2PNP 60V 0.05A TO78

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

Paquete: TO-78-6 Metal Can

JANTX2N6990

Microsemi Corporation

TRANS 4NPN 50V 0.8A

• Transistor Type: 4 NPN (Quad)
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 400mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-Flatpack
• Supplier Device Package: 14-Flatpack

Paquete: 14-Flatpack

JANTX2N6988

Microsemi Corporation

TRANS 4PNP 60V 0.6A

• Transistor Type: 4 PNP (Quad)
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 400mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-Flatpack
• Supplier Device Package: 14-Flatpack

Paquete: 14-Flatpack

JANTX2N3811U

Microsemi Corporation

TRANS 2PNP 60V 0.05A

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

Paquete: TO-78-6 Metal Can

JANTX2N3811L

Microsemi Corporation

TRANS 2PNP 60V 0.05A

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

Paquete: TO-78-6 Metal Can

JANTX2N3811

Microsemi Corporation

TRANS 2PNP 60V 0.05A TO78

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

Paquete: TO-78-6 Metal Can

JAN2N3811L

Microsemi Corporation

TRANS 2PNP 60V 0.05A TO78

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

Paquete: TO-78-6 Metal Can

JAN2N3811

Microsemi Corporation

TRANS 2PNP 60V 0.05A TO78

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

Paquete: TO-78-6 Metal Can