Página 2 - Toshiba Semiconductor and Storage Productos - Transistores - FET, MOSFET - Arreglos | Heisener Electronics
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Toshiba Semiconductor and Storage Productos - Transistores - FET, MOSFET - Arreglos

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Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SSM6L13TU(T5L,F,T)
Toshiba Semiconductor and Storage

MOSFET ARRAY N/P-CH 20V UF6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V, 250pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
Paquete: 6-SMD, Flat Leads
En existencias3.840
Logic Level Gate, 1.8V Drive
20V
800mA (Ta)
143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V
1V @ 1mA
-
268pF @ 10V, 250pF @ 10V
500mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
UF6
SSM6N48FU,RF(D
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
Paquete: 6-TSSOP, SC-88, SOT-363
En existencias2.464
Logic Level Gate, 2.5V Drive
30V
100mA (Ta)
3.2 Ohm @ 10mA, 4V
1.5V @ 100µA
-
15.1pF @ 3V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6L11TU(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.5A UF6 S

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 145 mOhm @ 250MA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
Paquete: 6-SMD, Flat Leads
En existencias3.456
Logic Level Gate
20V
500mA
145 mOhm @ 250MA, 4V
1.1V @ 100µA
-
268pF @ 10V
500mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
UF6
hot TPCL4203(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 4CHIPLGA

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XLGA
  • Supplier Device Package: 4-Chip LGA
Paquete: 4-XLGA
En existencias96.000
Standard
-
-
-
1.2V @ 200µA
-
685pF @ 10V
500mW
150°C (TJ)
Surface Mount
4-XLGA
4-Chip LGA
TPCL4202(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 4CHIPLGA

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XLGA
  • Supplier Device Package: 4-Chip LGA
Paquete: 4-XLGA
En existencias2.688
Standard
-
-
-
1.2V @ 200µA
-
780pF @ 10V
500mW
150°C (TJ)
Surface Mount
4-XLGA
4-Chip LGA
TPCL4201(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 4CHIPLGA

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XLGA
  • Supplier Device Package: 4-Chip LGA
Paquete: 4-XLGA
En existencias2.880
Standard
-
-
-
1.2V @ 200µA
-
720pF @ 10V
500mW
150°C (TJ)
Surface Mount
4-XLGA
4-Chip LGA
TPC8221-H,LQ(S
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 6A 8SOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias7.808
Standard
30V
6A
25 mOhm @ 3A, 10V
2.3V @ 100µA
12nC @ 10V
830pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot SSM6P15FE(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 0.1A ES6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
Paquete: SOT-563, SOT-666
En existencias1.056.000
Logic Level Gate
30V
100mA
12 Ohm @ 10mA, 4V
1.7V @ 100µA
-
9.1pF @ 3V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6N42FE(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.8A ES6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)
Paquete: SOT-563, SOT-666
En existencias3.168
Logic Level Gate
20V
800mA
240 mOhm @ 500mA, 4.5V
1V @ 1mA
2nC @ 4.5V
90pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6 (1.6x1.6)
SSM6N37CTD(TPL3)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A CST6D

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
  • Power - Max: 140mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: CST6D
Paquete: 6-SMD, Flat Leads
En existencias4.592
Logic Level Gate
20V
250mA
2.2 Ohm @ 100mA, 4.5V
1V @ 1mA
-
12pF @ 10V
140mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
CST6D
TPC8213-H(TE12LQ,M
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 5A SOP8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
Paquete: 8-SOIC (0.173", 4.40mm Width)
En existencias7.136
Logic Level Gate
60V
5A
50 mOhm @ 2.5A, 10V
2.3V @ 1mA
11nC @ 10V
625pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
TPC8212-H(TE12LQ,M
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 6A SOP8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
Paquete: 8-SOIC (0.173", 4.40mm Width)
En existencias3.280
Logic Level Gate
30V
6A
21 mOhm @ 3A, 10V
2.3V @ 1mA
16nC @ 10V
840pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
TPC8211(TE12L,Q,M)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 5.5A SOP8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
Paquete: 8-SOIC (0.173", 4.40mm Width)
En existencias4.912
Logic Level Gate
30V
5.5A
36 mOhm @ 3A, 10V
2.5V @ 1mA
25nC @ 10V
1250pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
TPCP8401(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V/12V PS-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V, 12V
  • Current - Continuous Drain (Id) @ 25°C: 100mA, 5.5A
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: PS-8 (2.9x2.4)
Paquete: 8-SMD, Flat Lead
En existencias7.472
Logic Level Gate
20V, 12V
100mA, 5.5A
3 Ohm @ 10mA, 4V
1.1V @ 100µA
-
9.3pF @ 3V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
PS-8 (2.9x2.4)
TPCP8203(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 40V 4.7A PS-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 360mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: PS-8 (2.9x2.4)
Paquete: 8-SMD, Flat Lead
En existencias4.896
Standard
40V
4.7A
-
2.5V @ 1mA
-
-
360mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
PS-8 (2.9x2.4)
hot TPCF8304(TE85L,F,M
Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 3.2A VS-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 1.6A, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 330mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: VS-8 (2.9x1.5)
Paquete: 8-SMD, Flat Lead
En existencias22.584
Logic Level Gate
30V
3.2A
72 mOhm @ 1.6A, 10V
1.2V @ 1mA
14nC @ 10V
600pF @ 10V
330mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
VS-8 (2.9x1.5)
hot TPC8405(TE12L,Q,M)
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 6A/4.5A 8SOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
Paquete: 8-SOIC (0.173", 4.40mm Width)
En existencias44.280
Logic Level Gate
30V
6A, 4.5A
26 mOhm @ 3A, 10V
2V @ 1mA
27nC @ 10V
1240pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
hot TPC8208(TE12L,Q,M)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 5A SOP8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
Paquete: 8-SOIC (0.173", 4.40mm Width)
En existencias19.932
Logic Level Gate
20V
5A
50 mOhm @ 2.5A, 4V
1.2V @ 200µA
9.5nC @ 5V
780pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
TPCF8402(TE85L,F,M
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 4A/3.2A VS-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3.2A
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
  • Power - Max: 330mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: VS-8 (2.9x1.5)
Paquete: 8-SMD, Flat Lead
En existencias4.704
Logic Level Gate
30V
4A, 3.2A
50 mOhm @ 2A, 10V
2V @ 1mA
10nC @ 10V
470pF @ 10V
330mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
VS-8 (2.9x1.5)
TPCF8201(TE85L,F,M
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 3A VS-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
  • Power - Max: 330mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: VS-8 (2.9x1.5)
Paquete: 8-SMD, Flat Lead
En existencias6.416
Logic Level Gate
20V
3A
49 mOhm @ 1.5A, 4.5V
1.2V @ 200µA
7.5nC @ 5V
590pF @ 10V
330mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
VS-8 (2.9x1.5)
TPC8207(TE12L,Q)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 6A 8-SOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 4.8A, 4V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
Paquete: 8-SOIC (0.173", 4.40mm Width)
En existencias2.704
Logic Level Gate
20V
6A
20 mOhm @ 4.8A, 4V
1.2V @ 200µA
22nC @ 5V
2010pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
TPC8408,LQ(S
Toshiba Semiconductor and Storage

MOSFET N/P-CH 40V 6.1A/5.3A 8SOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.3A
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias5.904
Logic Level Gate
40V
6.1A, 5.3A
32 mOhm @ 3.1A, 10V
2.3V @ 100µA
24nC @ 10V
850pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
TPC8407,LQ(S
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 9A/7.4A 8SOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A, 7.4A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias7.168
Logic Level Gate
30V
9A, 7.4A
17 mOhm @ 4.5A, 10V
2.3V @ 100µA
17nC @ 10V
1190pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
TPC8223-H,LQ(S
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 9A 8SOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias5.968
Logic Level Gate
30V
9A
17 mOhm @ 4.5A, 10V
2.3V @ 100µA
17nC @ 10V
1190pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SSM6L39TU,LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.8A UF6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA
  • Rds On (Max) @ Id, Vgs: 143 mOhm @ 600MA, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
Paquete: 6-SMD, Flat Leads
En existencias2.256
Logic Level Gate, 1.8V Drive
20V
800mA
143 mOhm @ 600MA, 4V
1V @ 1mA
-
268pF @ 10V
500mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
UF6